JP2009283895A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009283895A5 JP2009283895A5 JP2008318791A JP2008318791A JP2009283895A5 JP 2009283895 A5 JP2009283895 A5 JP 2009283895A5 JP 2008318791 A JP2008318791 A JP 2008318791A JP 2008318791 A JP2008318791 A JP 2008318791A JP 2009283895 A5 JP2009283895 A5 JP 2009283895A5
- Authority
- JP
- Japan
- Prior art keywords
- group iii
- iii nitride
- nitride semiconductor
- sapphire substrate
- multilayer structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 238000002441 X-ray diffraction Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 claims description 2
- 238000003917 TEM image Methods 0.000 description 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008318791A JP2009283895A (ja) | 2008-12-15 | 2008-12-15 | Ｉｉｉ族窒化物半導体積層構造体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008318791A JP2009283895A (ja) | 2008-12-15 | 2008-12-15 | Ｉｉｉ族窒化物半導体積層構造体 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008135939A Division JP2009283785A (ja) | 2008-05-23 | 2008-05-23 | Ｉｉｉ族窒化物半導体積層構造体およびその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010278305A Division JP2011103472A (ja) | 2010-12-14 | 2010-12-14 | Ｉｉｉ族窒化物半導体積層構造体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009283895A JP2009283895A (ja) | 2009-12-03 |
| JP2009283895A5 true JP2009283895A5 (enExample) | 2010-07-08 |
Family
ID=41453989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008318791A Pending JP2009283895A (ja) | 2008-12-15 | 2008-12-15 | Ｉｉｉ族窒化物半導体積層構造体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009283895A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010035489A1 (de) * | 2010-08-26 | 2012-03-01 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelement |
| KR101335937B1 (ko) * | 2012-06-04 | 2013-12-04 | 주식회사 루미스탈 | Ｌｌｏ 방식을 이용한 질화갈륨 웨이퍼 제조 방법 |
| JP2015160995A (ja) * | 2014-02-27 | 2015-09-07 | シャープ株式会社 | ＡｌＮＯバッファ層の製造方法および窒化物半導体素子の製造方法 |
| JP6491488B2 (ja) * | 2015-01-30 | 2019-03-27 | 住友金属鉱山株式会社 | エピタキシャル成長用基板及びその製造方法 |
| CN119643908A (zh) * | 2025-02-19 | 2025-03-18 | 吉林大学 | 一种薄膜透射样品制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60173829A (ja) * | 1984-02-14 | 1985-09-07 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体薄膜の成長方法 |
| JPH0964477A (ja) * | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| JP2002029896A (ja) * | 2000-07-05 | 2002-01-29 | National Institute Of Advanced Industrial & Technology | 窒化物半導体の結晶成長方法 |
| JP3954335B2 (ja) * | 2001-06-15 | 2007-08-08 | 日本碍子株式会社 | Ｉｉｉ族窒化物多層膜 |
| JP4117402B2 (ja) * | 2002-03-14 | 2008-07-16 | 国立大学法人東京工業大学 | 単結晶窒化アルミニウム膜およびその形成方法、ｉｉｉ族窒化物膜用下地基板、発光素子、並びに表面弾性波デバイス |
| JP4749792B2 (ja) * | 2005-08-03 | 2011-08-17 | 国立大学法人東京農工大学 | アルミニウム系ｉｉｉ族窒化物結晶の製造方法および結晶積層基板 |
| JP2007095786A (ja) * | 2005-09-27 | 2007-04-12 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
-
2008
- 2008-12-15 JP JP2008318791A patent/JP2009283895A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009283895A5 (enExample) | ||
| JP2013145876A5 (ja) | 酸化物半導体層 | |
| JP2008218746A5 (enExample) | ||
| JP2009123718A5 (enExample) | ||
| TW200810155A (en) | ZnO-based semiconductor element | |
| JP2011082494A5 (enExample) | ||
| JP2010080955A5 (enExample) | ||
| CN115663083A (zh) | 一种发光二极管及其制备方法 | |
| CN103489898A (zh) | 半导体器件以及在该半导体器件中使用的超晶格层 | |
| JP5159858B2 (ja) | 窒化ガリウム系化合物半導体基板とその製造方法 | |
| JP7576386B2 (ja) | 光半導体素子 | |
| CN115332408B (zh) | 深紫外led外延片及其制备方法、led | |
| JP2017092442A (ja) | 紫外線発光ダイオード | |
| JP2019012826A5 (enExample) | ||
| EP2325871A3 (en) | Semiconductor device and method of manufacturing the same | |
| JP2023084241A5 (enExample) | ||
| JP2005179167A5 (ja) | 半導体素子 | |
| JP2010056423A5 (enExample) | ||
| JP2009508336A5 (enExample) | ||
| JP2007261936A5 (enExample) | ||
| Zhao et al. | AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices | |
| JP2012515445A5 (enExample) | ||
| JPWO2021064816A5 (enExample) | ||
| JP7381249B2 (ja) | 窒化アルミニウム積層部材および発光デバイス | |
| JP5734362B2 (ja) | 半導体積層構造体及び半導体素子 |