JP2019012826A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019012826A5 JP2019012826A5 JP2018120352A JP2018120352A JP2019012826A5 JP 2019012826 A5 JP2019012826 A5 JP 2019012826A5 JP 2018120352 A JP2018120352 A JP 2018120352A JP 2018120352 A JP2018120352 A JP 2018120352A JP 2019012826 A5 JP2019012826 A5 JP 2019012826A5
- Authority
- JP
- Japan
- Prior art keywords
- volume
- crystal
- gallium
- gallium oxide
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims 65
- 229910002601 GaN Inorganic materials 0.000 claims 54
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 54
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 40
- 229910001195 gallium oxide Inorganic materials 0.000 claims 40
- 239000004065 semiconductor Substances 0.000 claims 31
- 239000000758 substrate Substances 0.000 claims 22
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- 238000003384 imaging method Methods 0.000 claims 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 3
- 150000004767 nitrides Chemical class 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017128960 | 2017-06-30 | ||
| JP2017128960 | 2017-06-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019012826A JP2019012826A (ja) | 2019-01-24 |
| JP2019012826A5 true JP2019012826A5 (enExample) | 2021-05-13 |
Family
ID=65226411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018120352A Pending JP2019012826A (ja) | 2017-06-30 | 2018-06-26 | ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2019012826A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7014355B2 (ja) * | 2017-06-28 | 2022-02-01 | 株式会社Flosfia | 積層構造体および半導体装置 |
| JP7011219B2 (ja) * | 2017-09-29 | 2022-01-26 | 株式会社Flosfia | 積層構造体および半導体装置 |
| JP7606190B2 (ja) | 2021-02-25 | 2024-12-25 | 株式会社デンソー | スイッチングデバイスとその製造方法 |
| WO2023021814A1 (ja) * | 2021-08-20 | 2023-02-23 | 日本碍子株式会社 | 積層体 |
| WO2023026633A1 (ja) * | 2021-08-27 | 2023-03-02 | 日本碍子株式会社 | 半導体膜及び複合基板 |
| JPWO2023182312A1 (enExample) * | 2022-03-25 | 2023-09-28 | ||
| CN117276336B (zh) * | 2023-11-22 | 2024-02-20 | 江西兆驰半导体有限公司 | 一种hemt的外延结构及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005064643A1 (en) * | 2003-04-15 | 2005-07-14 | The Regents Of The University Of California | NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS |
| WO2009015350A1 (en) * | 2007-07-26 | 2009-01-29 | S.O.I.Tec Silicon On Insulator Technologies | Epitaxial methods and templates grown by the methods |
| JP5185206B2 (ja) * | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
| US20130168693A1 (en) * | 2011-02-15 | 2013-07-04 | Sumitomo Electric Industries, Ltd. | Protective-film-attached composite substrate and method of manufacturing semiconductor device |
| JP6436538B2 (ja) * | 2015-06-16 | 2018-12-12 | 国立研究開発法人物質・材料研究機構 | ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子 |
-
2018
- 2018-06-26 JP JP2018120352A patent/JP2019012826A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2019012826A5 (enExample) | ||
| JP2021170655A5 (enExample) | ||
| JP5126729B2 (ja) | 画像表示装置 | |
| JP6375376B2 (ja) | エピツイストを利用したシリコン基板上のＧａＮ | |
| JP2016139777A5 (ja) | 半導体装置および半導体装置の作製方法 | |
| JP2017055403A5 (ja) | 撮像装置、モジュール、電子機器 | |
| JP2014072533A5 (enExample) | ||
| JP2014232869A5 (enExample) | ||
| JP2015065233A5 (enExample) | ||
| JP2011082494A5 (enExample) | ||
| CN106660801A (zh) | 石墨烯结构及其制备方法 | |
| CN1656617A (zh) | 半导体装置及采用其的显示装置 | |
| JP2005524987A5 (enExample) | ||
| CN103515419A (zh) | 用于硅衬底上的iii-v族氮化物层的梯度氮化铝镓和超晶格缓冲层 | |
| JP2015149422A5 (enExample) | ||
| JP5230116B2 (ja) | 高配向性シリコン薄膜の形成方法、３次元半導体素子の製造方法及び３次元半導体素子 | |
| JP2017175101A5 (ja) | 酸化物半導体膜、トランジスタ、半導体装置、表示装置、表示モジュール、電子機器 | |
| JP2012178493A5 (enExample) | ||
| RU2006127075A (ru) | Способ выращивания монокристалла нитрида на кремниевой пластине, нитридный полупроводниковый светоизлучающий диод, изготовленный с его использованием, и способ такого изготовления | |
| JP2014131023A5 (ja) | 酸化物半導体膜及び半導体装置 | |
| CN1780933A (zh) | 结晶膜的制造方法、结晶膜附着基体的制造方法、热电转换元件的制造方法、及热电转换元件 | |
| JP2005294794A (ja) | 窒化ガリウム系半導体発光素子 | |
| Wang et al. | Optoelectronic properties and structural characterization of GaN thick films on different substrates through pulsed laser deposition | |
| JP2003257854A5 (enExample) | ||
| JP2005209925A5 (enExample) |