JP6375376B2 - エピツイストを利用したシリコン基板上のGaN - Google Patents
エピツイストを利用したシリコン基板上のGaN Download PDFInfo
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- JP6375376B2 JP6375376B2 JP2016527405A JP2016527405A JP6375376B2 JP 6375376 B2 JP6375376 B2 JP 6375376B2 JP 2016527405 A JP2016527405 A JP 2016527405A JP 2016527405 A JP2016527405 A JP 2016527405A JP 6375376 B2 JP6375376 B2 JP 6375376B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 53
- 229910052710 silicon Inorganic materials 0.000 title claims description 45
- 239000010703 silicon Substances 0.000 title claims description 45
- 239000000758 substrate Substances 0.000 title claims description 43
- 239000013078 crystal Substances 0.000 claims description 88
- 239000000463 material Substances 0.000 claims description 29
- 239000000872 buffer Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 7
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 40
- 229910002601 GaN Inorganic materials 0.000 description 32
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02367—Substrates
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- H01L21/02373—Group 14 semiconducting materials
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- H01L21/02367—Substrates
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02516—Crystal orientation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- Microelectronics & Electronic Packaging (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
Claims (8)
- シリコン基板上にGaN材料を成長させる方法であって、
(100)表面方位または10度までのオフセットを伴う(100)表面方位を有する単結晶シリコン基板を提供するステップと、
エピツイスト技術を用いて、(110)結晶方位および立方結晶構造を有する希土類酸化物を含む単結晶応力管理層を前記シリコン基板上にエピタキシャルに成長させるステップと、
前記応力管理層の希土類酸化物よりもGaNの格子面間隔により近い格子面間隔を有する希土類酸化物を含む単結晶バッファ層を、前記応力管理層上にエピタキシャルに成長させるステップと、
前記バッファ層の表面に(11-20)結晶方位および(0001)結晶方位のいずれか1つを有する単結晶GaN材料の層をエピタキシャルに成長させるステップとを含む、方法。 - 前記単結晶応力管理層は、単結晶酸化ガドリニウム(Gd2O3)を含む、請求項1に記載の方法。
- 前記単結晶バッファ層は、単結晶酸化エルビウム(Er2O3)を含む、請求項1に記載の方法。
- シリコン基板上にGaN材料を成長させる方法であって、
(100)表面方位または10度以内オフセットされた(100)表面方位を有する単結晶シリコン基板を提供するステップと、
エピツイスト技術を用いて、立方結晶構造の(110)結晶方位を有する単結晶酸化カドリニウム(Gd2O3)であって、前記シリコン基板の表面と実質的に結晶格子整合する単結晶酸化ガドリニウム(Gd2O3)を含む単結晶応力管理層を前記シリコン基板上にエピタキシャルに成長させるステップと、
前記応力管理層上に、前記応力管理層の希土類酸化物よりGaNの格子面間隔により近い格子面間隔を有する単結晶酸化エルビウム(Er2O3)を含む単結晶バッファ層をエピタキシャルに成長させるステップと、
前記バッファの表面上に(11-20)結晶方位または(0001)結晶方位のいずれか1つを有する単結晶GaN半導体材料の層をエピタキシャルに成長させるステップとを含む、方法。 - シリコン基板に成長したGaN半導体材料であって、
(100)表面方位または10度までオフセットされた(100)表面方位を有する単結晶シリコン基板と、
前記シリコン基板上に配置され、(110)結晶方位および立方結晶構造を有する希土類酸化物を含む単結晶応力管理層と、
前記応力管理層上に配置されて、(110)結晶方位を有する希土類酸化物を含む単結晶バッファと、
前記バッファの表面上に置かれて、(11-20)結晶方位または(0001)結晶方位のいずれか1つを有する単結晶GaN材料の層と、を含むGaN半導体材料。 - 前記単結晶応力管理層は、単結晶酸化ガドリニウム(Gd2O3)を含む、請求項5に記載の、シリコン基板上に成長したGaN半導体物質。
- 前記単結晶バッファ層は、単結晶酸化エルビウム(Er2O3)を含む、請求項5に記載の、シリコン基板上に成長したGaN半導体物質。
- シリコン基板上に成長したGaN半導体材料であって、
(100)方位または10度までオフセットされた(100)方位を有する単結晶シリコン基板と、
前記シリコン基板上に配置された単結晶応力管理層であって、(110)結晶方位を有しシリコン基板の表面と実質的に結晶格子整合する立方結晶構造の単結晶酸化ガドリニウム(Gd2O3)を含む単結晶応力管理層と、
前記応力管理層上に配置されて、(110)結晶方位を有する単結晶酸化エルビウム(Er2O3)を含む単結晶バッファと、
前記バッファの表面に配置されて、(11-20)結晶方位または(0001)結晶方位のいずれか1つを有する単結晶GaN半導体材料の層とを含む、シリコン基板上に成長したGaN半導体材料。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US14/075,032 | 2013-11-08 | ||
US14/075,032 US8846504B1 (en) | 2013-11-08 | 2013-11-08 | GaN on Si(100) substrate using epi-twist |
PCT/US2014/062495 WO2015069481A1 (en) | 2013-11-08 | 2014-10-28 | GaN ON Si(100)SUBSTRATE USING EPI-TWIST |
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JP2017501563A JP2017501563A (ja) | 2017-01-12 |
JP6375376B2 true JP6375376B2 (ja) | 2018-08-15 |
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JP2016527405A Active JP6375376B2 (ja) | 2013-11-08 | 2014-10-28 | エピツイストを利用したシリコン基板上のGaN |
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US (1) | US8846504B1 (ja) |
EP (1) | EP3053184A4 (ja) |
JP (1) | JP6375376B2 (ja) |
CN (1) | CN105793958B (ja) |
WO (1) | WO2015069481A1 (ja) |
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US9496132B2 (en) * | 2012-03-20 | 2016-11-15 | Translucent, Inc. | Nucleation of III-N on REO templates |
US9613803B2 (en) | 2015-04-30 | 2017-04-04 | International Business Machines Corporation | Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same |
WO2017165197A1 (en) * | 2016-03-23 | 2017-09-28 | IQE, plc | Epitaxial metal oxide as buffer for epitaxial iii-v layers |
US9842900B2 (en) | 2016-03-30 | 2017-12-12 | International Business Machines Corporation | Graded buffer layers with lattice matched epitaxial oxide interlayers |
EP3443582A1 (en) * | 2016-04-13 | 2019-02-20 | IQE, Plc. | Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers |
CN106057641A (zh) * | 2016-05-27 | 2016-10-26 | 清华大学 | 半导体结构以及制备半导体结构的方法 |
KR102680861B1 (ko) | 2016-12-15 | 2024-07-03 | 삼성전자주식회사 | 질화 갈륨 기판의 제조 방법 |
WO2019143942A1 (en) * | 2018-01-19 | 2019-07-25 | Iqe Plc | Re-based integrated photonic and electronic layered structures |
US11757008B2 (en) | 2018-02-15 | 2023-09-12 | Iqe Plc | Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor |
GB2606356A (en) | 2021-05-04 | 2022-11-09 | Iqe Plc | A layered structure |
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JP3813740B2 (ja) * | 1997-07-11 | 2006-08-23 | Tdk株式会社 | 電子デバイス用基板 |
JP3975518B2 (ja) * | 1997-08-21 | 2007-09-12 | 株式会社豊田中央研究所 | 圧電セラミックス |
AU2001277001A1 (en) * | 2000-07-24 | 2002-02-05 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
JP4118061B2 (ja) * | 2002-02-07 | 2008-07-16 | 三洋電機株式会社 | 半導体の形成方法および半導体素子 |
US8106381B2 (en) * | 2006-10-18 | 2012-01-31 | Translucent, Inc. | Semiconductor structures with rare-earths |
EP1975988B1 (en) * | 2007-03-28 | 2015-02-25 | Siltronic AG | Multilayered semiconductor wafer and process for its production |
US20120183767A1 (en) * | 2010-02-19 | 2012-07-19 | Rytis Dargis | Hexagonal reo template buffer for iii-n layers on silicon |
US8455756B2 (en) * | 2010-02-19 | 2013-06-04 | Translucent, Inc. | High efficiency solar cell using IIIB material transition layers |
US9105471B2 (en) * | 2011-08-03 | 2015-08-11 | Translucent, Inc. | Rare earth oxy-nitride buffered III-N on silicon |
US9496132B2 (en) * | 2012-03-20 | 2016-11-15 | Translucent, Inc. | Nucleation of III-N on REO templates |
US8636844B1 (en) * | 2012-07-06 | 2014-01-28 | Translucent, Inc. | Oxygen engineered single-crystal REO template |
US8501635B1 (en) * | 2012-09-29 | 2013-08-06 | Translucent, Inc. | Modification of REO by subsequent III-N EPI process |
US8680507B1 (en) * | 2013-01-16 | 2014-03-25 | Translucent, Inc. | A1N inter-layers in III-N material grown on DBR/silicon substrate |
US8633569B1 (en) * | 2013-01-16 | 2014-01-21 | Translucent, Inc. | AlN inter-layers in III-N material grown on REO/silicon substrate |
-
2013
- 2013-11-08 US US14/075,032 patent/US8846504B1/en active Active
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2014
- 2014-10-28 CN CN201480061139.5A patent/CN105793958B/zh active Active
- 2014-10-28 JP JP2016527405A patent/JP6375376B2/ja active Active
- 2014-10-28 EP EP14860165.1A patent/EP3053184A4/en not_active Ceased
- 2014-10-28 WO PCT/US2014/062495 patent/WO2015069481A1/en active Application Filing
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Publication number | Publication date |
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EP3053184A4 (en) | 2017-03-15 |
CN105793958A (zh) | 2016-07-20 |
WO2015069481A1 (en) | 2015-05-14 |
EP3053184A1 (en) | 2016-08-10 |
CN105793958B (zh) | 2018-09-18 |
US8846504B1 (en) | 2014-09-30 |
JP2017501563A (ja) | 2017-01-12 |
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