JP2009283854A5 - - Google Patents

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Publication number
JP2009283854A5
JP2009283854A5 JP2008136918A JP2008136918A JP2009283854A5 JP 2009283854 A5 JP2009283854 A5 JP 2009283854A5 JP 2008136918 A JP2008136918 A JP 2008136918A JP 2008136918 A JP2008136918 A JP 2008136918A JP 2009283854 A5 JP2009283854 A5 JP 2009283854A5
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JP
Japan
Prior art keywords
layer
optical
semiconductor
wavelength
semiconductor layer
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JP2008136918A
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English (en)
Japanese (ja)
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JP5262293B2 (ja
JP2009283854A (ja
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Priority to JP2008136918A priority Critical patent/JP5262293B2/ja
Priority claimed from JP2008136918A external-priority patent/JP5262293B2/ja
Priority to US12/252,621 priority patent/US7928472B2/en
Priority to CN2009100081690A priority patent/CN101593784B/zh
Publication of JP2009283854A publication Critical patent/JP2009283854A/ja
Publication of JP2009283854A5 publication Critical patent/JP2009283854A5/ja
Application granted granted Critical
Publication of JP5262293B2 publication Critical patent/JP5262293B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008136918A 2008-05-26 2008-05-26 光半導体装置 Active JP5262293B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008136918A JP5262293B2 (ja) 2008-05-26 2008-05-26 光半導体装置
US12/252,621 US7928472B2 (en) 2008-05-26 2008-10-16 Optical semiconductor device with a distributed Bragg reflector layer
CN2009100081690A CN101593784B (zh) 2008-05-26 2009-03-09 光半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008136918A JP5262293B2 (ja) 2008-05-26 2008-05-26 光半導体装置

Publications (3)

Publication Number Publication Date
JP2009283854A JP2009283854A (ja) 2009-12-03
JP2009283854A5 true JP2009283854A5 (enExample) 2011-03-17
JP5262293B2 JP5262293B2 (ja) 2013-08-14

Family

ID=41341457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008136918A Active JP5262293B2 (ja) 2008-05-26 2008-05-26 光半導体装置

Country Status (3)

Country Link
US (1) US7928472B2 (enExample)
JP (1) JP5262293B2 (enExample)
CN (1) CN101593784B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5444994B2 (ja) * 2009-09-25 2014-03-19 三菱電機株式会社 半導体受光素子
KR101028314B1 (ko) * 2010-01-29 2011-04-12 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP2011258809A (ja) * 2010-06-10 2011-12-22 Mitsubishi Electric Corp 半導体受光素子
JP2012174977A (ja) * 2011-02-23 2012-09-10 Sumitomo Electric Ind Ltd 受光素子およびその製造方法
JP6035921B2 (ja) * 2012-07-10 2016-11-30 富士通株式会社 光検出器およびその製造方法
JP5918706B2 (ja) * 2013-02-21 2016-05-18 日本電信電話株式会社 長波長帯面発光レーザ
US9876127B2 (en) 2013-11-22 2018-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Backside-illuminated photodetector structure and method of making the same
JP6658910B2 (ja) * 2016-10-28 2020-03-04 三菱電機株式会社 裏面入射型受光素子及び光モジュール
CN109461778A (zh) * 2018-10-31 2019-03-12 中国电子科技集团公司第四十四研究所 一种提高背照式光电二极管响应度的结构及制作方法
JP7044048B2 (ja) * 2018-12-19 2022-03-30 日本電信電話株式会社 アバランシェフォトダイオードおよびその製造方法
JP2021114594A (ja) * 2019-08-27 2021-08-05 株式会社東芝 光半導体素子
CN114792738B (zh) * 2021-01-26 2025-04-18 朗美通日本株式会社 半导体光接收元件
CN118738032B (zh) * 2024-09-04 2024-12-10 芯思杰技术(深圳)股份有限公司 光电探测芯片、距离传感器及电子设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282469A (ja) * 1986-05-30 1987-12-08 Nec Corp 半導体受光素子
JPS639163A (ja) * 1986-06-30 1988-01-14 Nec Corp 半導体受光素子
JPH0821727B2 (ja) * 1988-11-18 1996-03-04 日本電気株式会社 アバランシェフォトダイオード
US5212703A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors
JP3544352B2 (ja) * 2000-10-30 2004-07-21 日本電気株式会社 半導体受光素子
JP2004327886A (ja) * 2003-04-28 2004-11-18 Nippon Sheet Glass Co Ltd 半導体受光素子
JP2005019599A (ja) 2003-06-25 2005-01-20 Seiko Epson Corp 光素子およびその製造方法、光モジュール、光伝達装置
JP4611066B2 (ja) * 2004-04-13 2011-01-12 三菱電機株式会社 アバランシェフォトダイオード
US7372886B2 (en) 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
US9640703B2 (en) * 2004-10-25 2017-05-02 Mitsubishi Electric Corporation Avalanche photodiode
JP2006253548A (ja) * 2005-03-14 2006-09-21 Mitsubishi Electric Corp 半導体受光素子
JP4985954B2 (ja) * 2006-06-27 2012-07-25 セイコーエプソン株式会社 面発光型半導体レーザ
JP4300245B2 (ja) * 2006-08-25 2009-07-22 キヤノン株式会社 多層膜反射鏡を備えた光学素子、面発光レーザ
JP4985298B2 (ja) 2007-10-10 2012-07-25 三菱電機株式会社 アバランシェフォトダイオード

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