CN103840033A - 高效率频宽乘积锗光探测器 - Google Patents
高效率频宽乘积锗光探测器 Download PDFInfo
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- CN103840033A CN103840033A CN201310617114.6A CN201310617114A CN103840033A CN 103840033 A CN103840033 A CN 103840033A CN 201310617114 A CN201310617114 A CN 201310617114A CN 103840033 A CN103840033 A CN 103840033A
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 43
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 230000008878 coupling Effects 0.000 claims abstract description 22
- 238000010168 coupling process Methods 0.000 claims abstract description 22
- 238000005859 coupling reaction Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000010521 absorption reaction Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 143
- 239000002344 surface layer Substances 0.000 claims description 27
- 238000002310 reflectometry Methods 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 239000004575 stone Substances 0.000 claims description 11
- 150000003376 silicon Chemical class 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 abstract description 11
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 230000004043 responsiveness Effects 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004446 light reflex Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101144392A TWI464864B (zh) | 2012-11-27 | 2012-11-27 | 高效率頻寬乘積鍺光偵測器 |
TW101144392 | 2012-11-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103840033A true CN103840033A (zh) | 2014-06-04 |
CN103840033B CN103840033B (zh) | 2018-03-09 |
Family
ID=50803342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310617114.6A Active CN103840033B (zh) | 2012-11-27 | 2013-11-27 | 高效率频宽乘积锗光探测器 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103840033B (zh) |
TW (1) | TWI464864B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106328751A (zh) * | 2015-07-02 | 2017-01-11 | 中兴通讯股份有限公司 | 硅基锗光电探测器 |
CN107369738A (zh) * | 2017-06-27 | 2017-11-21 | 上海集成电路研发中心有限公司 | 一种多频段探测的量子阱探测器及其制造方法 |
CN112652669A (zh) * | 2020-12-24 | 2021-04-13 | 上海师范大学 | 一种光学Tamm态增强型石墨烯光电探测器及其制备方法 |
CN114664968A (zh) * | 2022-03-15 | 2022-06-24 | 中国科学院长春光学精密机械与物理研究所 | 一种可见-红外双波段光电探测器 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9362428B2 (en) | 2012-11-27 | 2016-06-07 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
US10916669B2 (en) | 2012-12-10 | 2021-02-09 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
US10388806B2 (en) | 2012-12-10 | 2019-08-20 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
CN108352393B (zh) | 2015-07-23 | 2022-09-16 | 光程研创股份有限公司 | 高效宽光谱传感器 |
US10644187B2 (en) | 2015-07-24 | 2020-05-05 | Artilux, Inc. | Multi-wafer based light absorption apparatus and applications thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1652326A (zh) * | 2004-02-04 | 2005-08-10 | 中国科学院半导体研究所 | 高效硅基共振腔增强型探测器器件的制作方法 |
CN1780004A (zh) * | 2005-10-19 | 2006-05-31 | 中国科学院上海微系统与信息技术研究所 | 一种含隧道结的垂直腔型光电子器件 |
CN1812302A (zh) * | 2005-01-27 | 2006-08-02 | 中国科学院半导体研究所 | 一种高效热调谐共振腔增强型探测器及其制作方法 |
US20090121305A1 (en) * | 2007-11-14 | 2009-05-14 | Jds Uniphase Corporation | Front-Illuminated Avalanche Photodiode |
US20120018744A1 (en) * | 2010-07-23 | 2012-01-26 | Dosunmu Olufemi I | High speed, wide optical bandwidth, and high efficiency resonant cavity enhanced photo-detector |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11231177A (ja) * | 1997-12-12 | 1999-08-27 | Oki Electric Ind Co Ltd | 光素子モジュール及び光素子モジュールの製造方法 |
JP2004235190A (ja) * | 2003-01-28 | 2004-08-19 | Sony Corp | 光半導体装置 |
US7403553B2 (en) * | 2004-06-25 | 2008-07-22 | Finisar Corporation | Absorbing layers for reduced spontaneous emission effects in an integrated photodiode |
JP4703443B2 (ja) * | 2006-03-14 | 2011-06-15 | 株式会社東芝 | 受光素子及び光配線lsi |
US20100195952A1 (en) * | 2009-02-03 | 2010-08-05 | Nitto Denko Corporation | Multi-layer structure |
-
2012
- 2012-11-27 TW TW101144392A patent/TWI464864B/zh active
-
2013
- 2013-11-27 CN CN201310617114.6A patent/CN103840033B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1652326A (zh) * | 2004-02-04 | 2005-08-10 | 中国科学院半导体研究所 | 高效硅基共振腔增强型探测器器件的制作方法 |
CN1812302A (zh) * | 2005-01-27 | 2006-08-02 | 中国科学院半导体研究所 | 一种高效热调谐共振腔增强型探测器及其制作方法 |
CN1780004A (zh) * | 2005-10-19 | 2006-05-31 | 中国科学院上海微系统与信息技术研究所 | 一种含隧道结的垂直腔型光电子器件 |
US20090121305A1 (en) * | 2007-11-14 | 2009-05-14 | Jds Uniphase Corporation | Front-Illuminated Avalanche Photodiode |
CN101436621A (zh) * | 2007-11-14 | 2009-05-20 | Jds尤尼弗思公司 | 前照式雪崩光电二极管 |
US20120018744A1 (en) * | 2010-07-23 | 2012-01-26 | Dosunmu Olufemi I | High speed, wide optical bandwidth, and high efficiency resonant cavity enhanced photo-detector |
CN103026504A (zh) * | 2010-07-23 | 2013-04-03 | 英特尔公司 | 高速、宽光学带宽和高效谐振腔增强的光电检测器 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106328751A (zh) * | 2015-07-02 | 2017-01-11 | 中兴通讯股份有限公司 | 硅基锗光电探测器 |
CN107369738A (zh) * | 2017-06-27 | 2017-11-21 | 上海集成电路研发中心有限公司 | 一种多频段探测的量子阱探测器及其制造方法 |
CN112652669A (zh) * | 2020-12-24 | 2021-04-13 | 上海师范大学 | 一种光学Tamm态增强型石墨烯光电探测器及其制备方法 |
CN114664968A (zh) * | 2022-03-15 | 2022-06-24 | 中国科学院长春光学精密机械与物理研究所 | 一种可见-红外双波段光电探测器 |
CN114664968B (zh) * | 2022-03-15 | 2023-11-14 | 中国科学院长春光学精密机械与物理研究所 | 一种可见-红外双波段光电探测器 |
Also Published As
Publication number | Publication date |
---|---|
CN103840033B (zh) | 2018-03-09 |
TW201421653A (zh) | 2014-06-01 |
TWI464864B (zh) | 2014-12-11 |
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PB01 | Publication | ||
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Owner name: OPTICAL CLARITY TECHNOLOGY CORP. Free format text: FORMER OWNER: HIGH POWER LIGHTING CORP. Effective date: 20150525 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20150525 Address after: Taiwan Hsinchu County Chinese jhubei City, six five road No. 238 Applicant after: Guang Cheng Science and Technology Co., Ltd. Address before: Taiwan, China Taipei Lutheran District Lutheran Road 5 section 7 No. 37 Building Applicant before: HIGH POWER LIGHTING CORP |
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