JP2009239286A - 液浸システム、露光装置、露光方法、及びデバイス製造方法 - Google Patents

液浸システム、露光装置、露光方法、及びデバイス製造方法 Download PDF

Info

Publication number
JP2009239286A
JP2009239286A JP2009074674A JP2009074674A JP2009239286A JP 2009239286 A JP2009239286 A JP 2009239286A JP 2009074674 A JP2009074674 A JP 2009074674A JP 2009074674 A JP2009074674 A JP 2009074674A JP 2009239286 A JP2009239286 A JP 2009239286A
Authority
JP
Japan
Prior art keywords
liquid
substrate
liquid recovery
immersion system
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009074674A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009239286A5 (enExample
Inventor
Yasufumi Nishii
康文 西井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of JP2009239286A publication Critical patent/JP2009239286A/ja
Publication of JP2009239286A5 publication Critical patent/JP2009239286A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009074674A 2008-03-27 2009-03-25 液浸システム、露光装置、露光方法、及びデバイス製造方法 Pending JP2009239286A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6481008P 2008-03-27 2008-03-27
US12/382,742 US8233139B2 (en) 2008-03-27 2009-03-23 Immersion system, exposure apparatus, exposing method, and device fabricating method

Publications (2)

Publication Number Publication Date
JP2009239286A true JP2009239286A (ja) 2009-10-15
JP2009239286A5 JP2009239286A5 (enExample) 2013-03-14

Family

ID=40793250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009074674A Pending JP2009239286A (ja) 2008-03-27 2009-03-25 液浸システム、露光装置、露光方法、及びデバイス製造方法

Country Status (5)

Country Link
US (2) US8233139B2 (enExample)
JP (1) JP2009239286A (enExample)
KR (1) KR20100133446A (enExample)
TW (1) TW200947145A (enExample)
WO (1) WO2009119898A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150005603A (ko) * 2012-04-10 2015-01-14 가부시키가이샤 니콘 액침 부재 및 노광 장치
JPWO2014057925A1 (ja) * 2012-10-12 2016-09-05 株式会社ニコン 防振装置を備えた露光装置
JPWO2014104159A1 (ja) * 2012-12-27 2017-01-12 株式会社ニコン 液浸部材及び露光装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI439813B (zh) * 2006-05-10 2014-06-01 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US8233139B2 (en) * 2008-03-27 2012-07-31 Nikon Corporation Immersion system, exposure apparatus, exposing method, and device fabricating method
US8896806B2 (en) * 2008-12-29 2014-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2011083724A1 (ja) * 2010-01-08 2011-07-14 株式会社ニコン 液浸部材、露光装置、露光方法、及びデバイス製造方法
NL2009692A (en) * 2011-12-07 2013-06-10 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
US9823580B2 (en) * 2012-07-20 2017-11-21 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
US10324384B2 (en) 2014-07-01 2019-06-18 Asml Netherlands B.V. Lithographic apparatus and a method of manufacturing a lithographic apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030902A1 (ja) * 2004-09-17 2006-03-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
JP2007053329A (ja) * 2005-01-31 2007-03-01 Nikon Corp 露光装置及びデバイス製造方法
JP2007053193A (ja) * 2005-08-17 2007-03-01 Nikon Corp 露光装置及びデバイス製造方法
JP2007335662A (ja) * 2006-06-15 2007-12-27 Canon Inc 露光装置
JP2008034801A (ja) * 2006-06-30 2008-02-14 Canon Inc 露光装置およびデバイス製造方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU5067898A (en) 1996-11-28 1998-06-22 Nikon Corporation Aligner and method for exposure
USRE40043E1 (en) 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
IL138374A (en) 1998-03-11 2004-07-25 Nikon Corp An ultraviolet laser device and an exposure device that includes such a device
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US6611316B2 (en) 2001-02-27 2003-08-26 Asml Holding N.V. Method and system for dual reticle image exposure
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
WO2004092833A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1477856A1 (en) 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101748923B1 (ko) 2003-09-03 2017-06-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
US8111373B2 (en) * 2004-03-25 2012-02-07 Nikon Corporation Exposure apparatus and device fabrication method
WO2005119742A1 (ja) 2004-06-04 2005-12-15 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
JP4543767B2 (ja) 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161654B2 (en) * 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7751026B2 (en) 2005-08-25 2010-07-06 Nikon Corporation Apparatus and method for recovering fluid for immersion lithography
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7864292B2 (en) * 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI439813B (zh) 2006-05-10 2014-06-01 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US8134685B2 (en) 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US20090122282A1 (en) 2007-05-21 2009-05-14 Nikon Corporation Exposure apparatus, liquid immersion system, exposing method, and device fabricating method
US8233139B2 (en) * 2008-03-27 2012-07-31 Nikon Corporation Immersion system, exposure apparatus, exposing method, and device fabricating method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030902A1 (ja) * 2004-09-17 2006-03-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
JP2007053329A (ja) * 2005-01-31 2007-03-01 Nikon Corp 露光装置及びデバイス製造方法
JP2007053193A (ja) * 2005-08-17 2007-03-01 Nikon Corp 露光装置及びデバイス製造方法
JP2007335662A (ja) * 2006-06-15 2007-12-27 Canon Inc 露光装置
JP2008034801A (ja) * 2006-06-30 2008-02-14 Canon Inc 露光装置およびデバイス製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150005603A (ko) * 2012-04-10 2015-01-14 가부시키가이샤 니콘 액침 부재 및 노광 장치
JP2015515738A (ja) * 2012-04-10 2015-05-28 株式会社ニコン 液浸部材、及び、露光装置
US9810999B2 (en) 2012-04-10 2017-11-07 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
JP2018022198A (ja) * 2012-04-10 2018-02-08 株式会社ニコン 液浸部材、露光装置、及びデバイス製造方法
US10139736B2 (en) 2012-04-10 2018-11-27 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
JP2019191613A (ja) * 2012-04-10 2019-10-31 株式会社ニコン 液浸部材、及び、露光装置
US10520828B2 (en) 2012-04-10 2019-12-31 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
KR102158968B1 (ko) 2012-04-10 2020-09-23 가부시키가이샤 니콘 액침 부재 및 노광 장치
JPWO2014057925A1 (ja) * 2012-10-12 2016-09-05 株式会社ニコン 防振装置を備えた露光装置
JP2018092195A (ja) * 2012-10-12 2018-06-14 株式会社ニコン 露光装置、露光方法、デバイス製造方法、プログラム、及び記録媒体
US10599050B2 (en) 2012-10-12 2020-03-24 Nikon Corporation Exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
JPWO2014104159A1 (ja) * 2012-12-27 2017-01-12 株式会社ニコン 液浸部材及び露光装置

Also Published As

Publication number Publication date
WO2009119898A1 (en) 2009-10-01
KR20100133446A (ko) 2010-12-21
US20120300181A1 (en) 2012-11-29
US20090280436A1 (en) 2009-11-12
TW200947145A (en) 2009-11-16
US8233139B2 (en) 2012-07-31

Similar Documents

Publication Publication Date Title
JP5136080B2 (ja) 液体回収システム、液浸露光装置、液浸露光方法、及びデバイス製造方法
JP2009239286A (ja) 液浸システム、露光装置、露光方法、及びデバイス製造方法
JPWO2009078422A1 (ja) ステージ装置、露光装置及びデバイス製造方法
JPWO2007132862A1 (ja) 投影光学系、露光方法、露光装置、及びデバイス製造方法
JP2012524983A (ja) 液浸部材
JP4802604B2 (ja) 露光装置、露光方法、及びデバイス製造方法
JPWO2011083724A1 (ja) 液浸部材、露光装置、露光方法、及びデバイス製造方法
JP2010528449A (ja) 露光装置、液浸システム、露光方法、及びデバイス製造方法
JP5369443B2 (ja) ステージ装置、露光装置、露光方法、及びデバイス製造方法
JP2010205914A (ja) 露光装置、露光方法、及びデバイス製造方法
JP5375843B2 (ja) 露光装置、露光方法、及びデバイス製造方法
JP2010135794A (ja) 露光装置、露光方法、及びデバイス製造方法
JP2011222652A (ja) 基板ステージ、露光装置及び液浸露光方法、並びにデバイス製造方法
JP2008300771A (ja) 液浸露光装置、デバイス製造方法、及び露光条件の決定方法
JP5407383B2 (ja) 露光装置、及びデバイス製造方法
JP2010135796A (ja) 露光装置、露光方法、及びデバイス製造方法
JP2011066306A (ja) 露光装置、露光方法、及びデバイス製造方法
JP2010157724A (ja) 露光装置、露光方法、及びデバイス製造方法
JP2009076583A (ja) ステージ装置、露光装置、露光方法及びデバイス製造方法
JP2009188060A (ja) 液浸システム、露光装置、露光方法、及びデバイス製造方法
JP2009212234A (ja) 液体回収システム、露光装置、露光方法、及びデバイス製造方法
JP5598524B2 (ja) 露光装置、露光方法、及びデバイス製造方法
JP2007035934A (ja) 露光装置及びデバイス製造方法
JP5157637B2 (ja) 露光装置、露光方法、及びデバイス製造方法
JP2010157725A (ja) 露光装置、露光方法、及びデバイス製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120308

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120313

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130124

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130522

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130528

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20131001