TW200947145A - Immersion system, exposure apparatus, exposing method, and device fabricating method - Google Patents

Immersion system, exposure apparatus, exposing method, and device fabricating method Download PDF

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Publication number
TW200947145A
TW200947145A TW098109833A TW98109833A TW200947145A TW 200947145 A TW200947145 A TW 200947145A TW 098109833 A TW098109833 A TW 098109833A TW 98109833 A TW98109833 A TW 98109833A TW 200947145 A TW200947145 A TW 200947145A
Authority
TW
Taiwan
Prior art keywords
liquid
substrate
liquid recovery
exposure
distance
Prior art date
Application number
TW098109833A
Other languages
English (en)
Chinese (zh)
Inventor
Yasufumi Nishii
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200947145A publication Critical patent/TW200947145A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW098109833A 2008-03-27 2009-03-26 Immersion system, exposure apparatus, exposing method, and device fabricating method TW200947145A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6481008P 2008-03-27 2008-03-27
US12/382,742 US8233139B2 (en) 2008-03-27 2009-03-23 Immersion system, exposure apparatus, exposing method, and device fabricating method

Publications (1)

Publication Number Publication Date
TW200947145A true TW200947145A (en) 2009-11-16

Family

ID=40793250

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098109833A TW200947145A (en) 2008-03-27 2009-03-26 Immersion system, exposure apparatus, exposing method, and device fabricating method

Country Status (5)

Country Link
US (2) US8233139B2 (enExample)
JP (1) JP2009239286A (enExample)
KR (1) KR20100133446A (enExample)
TW (1) TW200947145A (enExample)
WO (1) WO2009119898A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104350425A (zh) * 2012-04-10 2015-02-11 株式会社尼康 液浸构件及曝光装置

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EP2023378B1 (en) * 2006-05-10 2013-03-13 Nikon Corporation Exposure apparatus and device manufacturing method
US8233139B2 (en) * 2008-03-27 2012-07-31 Nikon Corporation Immersion system, exposure apparatus, exposing method, and device fabricating method
US8896806B2 (en) * 2008-12-29 2014-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP2523210A1 (en) * 2010-01-08 2012-11-14 Nikon Corporation Liquid-immersion member, exposing device, exposing method, and device manufacturing method
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US9823580B2 (en) 2012-07-20 2017-11-21 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
US9494870B2 (en) * 2012-10-12 2016-11-15 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9720331B2 (en) 2012-12-27 2017-08-01 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
KR20170026563A (ko) 2014-07-01 2017-03-08 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 제조하는 방법

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DE69829614T2 (de) 1997-03-10 2006-03-09 Asml Netherlands B.V. Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
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WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
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EP3223053A1 (en) 2003-09-03 2017-09-27 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
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KR101504445B1 (ko) * 2004-03-25 2015-03-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
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JP5005226B2 (ja) * 2005-01-31 2012-08-22 株式会社ニコン 露光装置及びデバイス製造方法、液体保持方法
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4802604B2 (ja) * 2005-08-17 2011-10-26 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7751026B2 (en) 2005-08-25 2010-07-06 Nikon Corporation Apparatus and method for recovering fluid for immersion lithography
US7864292B2 (en) * 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
EP2023378B1 (en) 2006-05-10 2013-03-13 Nikon Corporation Exposure apparatus and device manufacturing method
JP2007335662A (ja) 2006-06-15 2007-12-27 Canon Inc 露光装置
JP2008034801A (ja) 2006-06-30 2008-02-14 Canon Inc 露光装置およびデバイス製造方法
US8134685B2 (en) 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US20090122282A1 (en) 2007-05-21 2009-05-14 Nikon Corporation Exposure apparatus, liquid immersion system, exposing method, and device fabricating method
US8233139B2 (en) * 2008-03-27 2012-07-31 Nikon Corporation Immersion system, exposure apparatus, exposing method, and device fabricating method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104350425A (zh) * 2012-04-10 2015-02-11 株式会社尼康 液浸构件及曝光装置
US9323160B2 (en) 2012-04-10 2016-04-26 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
US9810999B2 (en) 2012-04-10 2017-11-07 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
TWI611270B (zh) * 2012-04-10 2018-01-11 尼康股份有限公司 液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體
US10139736B2 (en) 2012-04-10 2018-11-27 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
TWI658335B (zh) * 2012-04-10 2019-05-01 日商尼康股份有限公司 液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體
US10520828B2 (en) 2012-04-10 2019-12-31 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium

Also Published As

Publication number Publication date
US20090280436A1 (en) 2009-11-12
JP2009239286A (ja) 2009-10-15
WO2009119898A1 (en) 2009-10-01
US8233139B2 (en) 2012-07-31
US20120300181A1 (en) 2012-11-29
KR20100133446A (ko) 2010-12-21

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