JP2009158906A - ヒータープレートを備えたベーク装置及びヒータープレートの製造方法 - Google Patents
ヒータープレートを備えたベーク装置及びヒータープレートの製造方法 Download PDFInfo
- Publication number
- JP2009158906A JP2009158906A JP2008114272A JP2008114272A JP2009158906A JP 2009158906 A JP2009158906 A JP 2009158906A JP 2008114272 A JP2008114272 A JP 2008114272A JP 2008114272 A JP2008114272 A JP 2008114272A JP 2009158906 A JP2009158906 A JP 2009158906A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- temperature sensor
- base plate
- layer
- heater plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 87
- 230000008569 process Effects 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 239000000919 ceramic Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 57
- 239000010410 layer Substances 0.000 claims description 43
- 238000007747 plating Methods 0.000 claims description 39
- 229910052759 nickel Inorganic materials 0.000 claims description 27
- 238000005476 soldering Methods 0.000 claims description 22
- 238000007772 electroless plating Methods 0.000 claims description 20
- 238000000206 photolithography Methods 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000003963 antioxidant agent Substances 0.000 claims description 13
- 230000003078 antioxidant effect Effects 0.000 claims description 13
- 239000011247 coating layer Substances 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 230000003064 anti-oxidating effect Effects 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 abstract description 5
- 239000002585 base Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 20
- 239000000243 solution Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 13
- 239000003054 catalyst Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 238000005238 degreasing Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 230000003750 conditioning effect Effects 0.000 description 4
- 150000004673 fluoride salts Chemical class 0.000 description 4
- 150000007522 mineralic acids Chemical class 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000013019 agitation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000008139 complexing agent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 150000002940 palladium Chemical class 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- 229910002855 Sn-Pd Inorganic materials 0.000 description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- -1 direct rays Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000002815 nickel Chemical class 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910001432 tin ion Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 238000005237 degreasing agent Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000001119 stannous chloride Substances 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
また、温度センサーの設置状態を維持することができるベーク装置及びその製造方法を提供する。
【解決手段】 密閉空間を形成するチャンバーと、前記チャンバー内に設置されるヒータープレートと、を含み、前記ヒータープレートは、セラミックで形成され、ベーク加工のためのウェハーが載置されるベースプレートと、前記ベースプレートの底面に金属メッキ層で形成されたヒーターと、を含んでベーク装置を構成する。
【選択図】 図2
Description
20 ウェハー
30 ヒータープレート
31 ベースプレート
32、32 ヒーター
34 酸化防止層
35 ソルダー
36 金属コーティング層
37 温度センサー
40 制御部
Claims (18)
- 密閉空間を形成するチャンバーと、
前記チャンバー内に設置されるヒータープレートと、を含み、
前記ヒータープレートは、セラミックで形成され、ベーク加工のためのウェハーが載置されるベースプレートと、前記ベースプレートの底面に金属メッキ層で形成されたヒーターと、を含むベーク装置。 - 前記ヒーターは、無電解メッキによって形成されることを特徴とする請求項1に記載のベーク装置。
- 前記ヒーターは、フォトリソグラフィ工程によって所定のパターンで形成されることを特徴とする請求項2に記載のベーク装置。
- 前記ヒーターは、ニッケル(Ni)を含んで形成されることを特徴とする請求項1に記載のベーク装置。
- 前記ベースプレートには、金属メッキ層で形成されるセンサーパッドが設けられ、前記センサーパッドには、温度センサーがソルダリングによって接合されることを特徴とする請求項1に記載のベーク装置。
- 前記ヒーターは、その表面に金、白金、チタニウムのうち何れか一つの金属による酸化防止層を備えたことを特徴とする請求項5に記載のベーク装置。
- 前記温度センサーは、ソルダリングのための金属コーティング層を備えたことを特徴とする請求項5に記載のベーク装置。
- セラミックで形成され、ベーク加工のためのウェハーが載置されるベースプレートと、前記ベースプレートの底面に金属メッキ層で形成されたヒーターと、を含むヒータープレート。
- 前記ヒーターは、無電解メッキによって形成されることを特徴とする請求項8に記載のヒータープレート。
- 前記ヒーターは、フォトリソグラフィ工程によって所定のパターンで形成されることを特徴とする請求項9に記載のヒータープレート。
- 前記ベースプレートには、金属メッキ層で形成されるセンサーパッドが設けられ、前記センサーパッドには、温度センサーがソルダリングによって接合されることを特徴とする請求項8に記載のヒータープレート。
- 前記温度センサーは、ソルダリングのための金属コーティング層を備えたことを特徴とする請求項11に記載のヒータープレート。
- 前記ヒーターは、その表面に金、白金、チタニウムのうち何れか一つの金属による酸化防止層を備えたことを特徴とする請求項11に記載のヒータープレート。
- ウェハーを加熱するためのヒータープレートの製造方法において、
前記ヒータープレートを製造するために、
セラミックで形成されたベースプレートの底面に金属メッキ層を形成する段階と;
前記金属メッキ層をフォトリソグラフィ工程によって所定のパターンで加工する段階と;を含んで構成されるヒータープレートの製造方法。 - 前記金属メッキ層は、無電解メッキによって形成されることを特徴とする請求項14に記載のヒータープレートの製造方法。
- 前記フォトリソグラフィ工程によるパターン加工後に、前記金属メッキ層上に酸化防止層を形成する段階をさらに含むことを特徴とする請求項14に記載のヒータープレートの製造方法。
- 前記酸化防止層上に温度センサーをソルダリングする段階をさらに含むことを特徴とする請求項16に記載のヒータープレートの製造方法。
- 前記ソルダリングの前段階として、前記温度センサーにおける前記ソルダリングによる前記酸化防止層との接合部位に金属コーティング層を形成する段階をさらに含むことを特徴とする請求項17に記載のヒータープレートの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070137767A KR100949115B1 (ko) | 2007-12-26 | 2007-12-26 | 히터 플레이트를 구비한 베이크 장치 및 히터 플레이트의제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009158906A true JP2009158906A (ja) | 2009-07-16 |
Family
ID=40962553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008114272A Pending JP2009158906A (ja) | 2007-12-26 | 2008-04-24 | ヒータープレートを備えたベーク装置及びヒータープレートの製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2009158906A (ja) |
KR (1) | KR100949115B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013042065A (ja) * | 2011-08-19 | 2013-02-28 | Toshiba Tec Corp | 発熱部材、その製造方法、および熱圧着装置 |
US20140091077A1 (en) * | 2012-09-28 | 2014-04-03 | Semes Co., Ltd. | Supporting unit, substrate treating device including the same, and method of manufacturing the supporting unit |
CN111312628A (zh) * | 2020-02-27 | 2020-06-19 | Tcl华星光电技术有限公司 | 在显示面板制程中应用的烘烤设备 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101412636B1 (ko) * | 2012-09-28 | 2014-06-27 | 세메스 주식회사 | 지지 유닛 및 이를 포함하는 기판 처리 장치, 그리고 지지 유닛 제조 방법 |
KR102255787B1 (ko) * | 2014-08-29 | 2021-05-27 | 세메스 주식회사 | 기판 처리 장치 및 지지 유닛 제조 방법 |
WO2018100850A1 (ja) * | 2016-12-01 | 2018-06-07 | 株式会社日立国際電気 | 基板処理装置、天井ヒータおよび半導体装置の製造方法 |
KR102484368B1 (ko) * | 2021-12-28 | 2023-01-04 | 신성전자정밀 주식회사 | 고신뢰성 및 온도 균일성 갖는 세라믹 히터의 제조방법 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09507299A (ja) * | 1994-01-10 | 1997-07-22 | サーモスキャン,インコーポレーテッド | 非接触能動温度センサ |
JPH1140330A (ja) * | 1997-07-19 | 1999-02-12 | Ibiden Co Ltd | ヒーターおよびその製造方法 |
JP2001067779A (ja) * | 1999-09-01 | 2001-03-16 | Toshiba Corp | ディスク記憶装置及びスピンドルモータの起動方法 |
JP2002063983A (ja) * | 2000-08-22 | 2002-02-28 | Ibiden Co Ltd | セラミックヒータ |
JP2002170651A (ja) * | 2000-11-29 | 2002-06-14 | Ibiden Co Ltd | セラミックヒータ |
JP2003188294A (ja) * | 2001-12-21 | 2003-07-04 | Murata Mfg Co Ltd | 電子部品の製造方法 |
JP2004031340A (ja) * | 2003-05-12 | 2004-01-29 | Ibiden Co Ltd | ヒータ |
JP2007158110A (ja) * | 2005-12-06 | 2007-06-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2007292725A (ja) * | 2006-03-29 | 2007-11-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2007329008A (ja) * | 2006-06-07 | 2007-12-20 | Tokyo Electron Ltd | 熱板及びその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100459905B1 (ko) * | 2002-11-21 | 2004-12-03 | 삼성전자주식회사 | 두 개의 잉크챔버 사이에 배치된 히터를 가진 일체형잉크젯 프린트헤드 및 그 제조방법 |
KR20060023220A (ko) * | 2004-09-09 | 2006-03-14 | 삼성전자주식회사 | 반도체 제조용 베이크 장치 |
-
2007
- 2007-12-26 KR KR1020070137767A patent/KR100949115B1/ko active IP Right Grant
-
2008
- 2008-04-24 JP JP2008114272A patent/JP2009158906A/ja active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09507299A (ja) * | 1994-01-10 | 1997-07-22 | サーモスキャン,インコーポレーテッド | 非接触能動温度センサ |
JPH1140330A (ja) * | 1997-07-19 | 1999-02-12 | Ibiden Co Ltd | ヒーターおよびその製造方法 |
JP2001067779A (ja) * | 1999-09-01 | 2001-03-16 | Toshiba Corp | ディスク記憶装置及びスピンドルモータの起動方法 |
JP2002063983A (ja) * | 2000-08-22 | 2002-02-28 | Ibiden Co Ltd | セラミックヒータ |
JP2002170651A (ja) * | 2000-11-29 | 2002-06-14 | Ibiden Co Ltd | セラミックヒータ |
JP2003188294A (ja) * | 2001-12-21 | 2003-07-04 | Murata Mfg Co Ltd | 電子部品の製造方法 |
JP2004031340A (ja) * | 2003-05-12 | 2004-01-29 | Ibiden Co Ltd | ヒータ |
JP2007158110A (ja) * | 2005-12-06 | 2007-06-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2007292725A (ja) * | 2006-03-29 | 2007-11-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2007329008A (ja) * | 2006-06-07 | 2007-12-20 | Tokyo Electron Ltd | 熱板及びその製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013042065A (ja) * | 2011-08-19 | 2013-02-28 | Toshiba Tec Corp | 発熱部材、その製造方法、および熱圧着装置 |
US20140091077A1 (en) * | 2012-09-28 | 2014-04-03 | Semes Co., Ltd. | Supporting unit, substrate treating device including the same, and method of manufacturing the supporting unit |
US9691644B2 (en) * | 2012-09-28 | 2017-06-27 | Semes Co., Ltd. | Supporting unit, substrate treating device including the same, and method of manufacturing the supporting unit |
CN111312628A (zh) * | 2020-02-27 | 2020-06-19 | Tcl华星光电技术有限公司 | 在显示面板制程中应用的烘烤设备 |
CN111312628B (zh) * | 2020-02-27 | 2022-05-27 | Tcl华星光电技术有限公司 | 在显示面板制程中应用的烘烤设备 |
Also Published As
Publication number | Publication date |
---|---|
KR20090069938A (ko) | 2009-07-01 |
KR100949115B1 (ko) | 2010-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6993395B2 (ja) | 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法 | |
KR100949115B1 (ko) | 히터 플레이트를 구비한 베이크 장치 및 히터 플레이트의제조방법 | |
JP2000502211A (ja) | ウェハ製造のためにチタン・タングステン合金類に対して無電解プレーティングを選択的にイニシエートするパラジウム浸漬デポジションの使用 | |
JP2015526903A5 (ja) | ||
JP5711376B2 (ja) | 金属表面を処理する方法 | |
JP6651271B2 (ja) | 半導体素子及びその製造方法 | |
JP4559818B2 (ja) | シリコン基板の無電解めっき方法およびシリコン基板上の金属層形成方法 | |
JP2006507404A (ja) | 無電解メッキ槽の温度制御手順 | |
JP2019007067A (ja) | 無電解めっきプロセス | |
KR100759452B1 (ko) | 니켈 패턴이 형성된 질화알루미늄 기판의 제조방법 | |
JP3728572B2 (ja) | 配線基板の製造方法 | |
JP2004019003A (ja) | プリント回路基板及びそのメッキ方法 | |
JP6474860B2 (ja) | 無電解ニッケルストライクめっき液及びニッケルめっき皮膜の成膜方法 | |
JP4647159B2 (ja) | 無電解めっき皮膜の形成方法 | |
JP2006052440A (ja) | 無電解めっき用触媒液及び無電解めっき皮膜の形成方法 | |
JP4521345B2 (ja) | 触媒処理方法、無電解めっき方法および無電解めっき方法を用いた回路形成方法 | |
KR101179118B1 (ko) | 질화알루미늄-h질화붕소 복합체를 기판으로 하는 열판 및 그 제조방법 | |
JP2004332036A (ja) | 無電解めっき方法 | |
KR101164128B1 (ko) | 고온용 세라믹 히터 및 그 제조방법 | |
JPH08264700A (ja) | 無電解Niめっき方法 | |
JP2007305660A (ja) | めっき配線基板およびめっき配線基板の製造方法 | |
KR20110076448A (ko) | 탄화물 세라믹 열판 및 그 제조방법 | |
JP2004332037A (ja) | 無電解金めっき方法 | |
JPH08325744A (ja) | 無電解ニッケル−ホウ素めっき皮膜の活性化方法 | |
KR100589253B1 (ko) | 금속 회로가 도금된 세라믹 보드 및 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101213 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120509 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120515 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120814 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120817 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120918 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20121120 |