JP2009117862A - 改善された半田ボールランドの構造を有する半導体パッケージ - Google Patents
改善された半田ボールランドの構造を有する半導体パッケージ Download PDFInfo
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 170
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000002093 peripheral effect Effects 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 abstract description 7
- 230000004927 fusion Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010047700 Vomiting Diseases 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81385—Shape, e.g. interlocking features
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
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- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
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- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- Manufacturing & Machinery (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
【解決手段】半導体パッケージは、平面を有する基板と、前記基板の平面に形成される複数の半田ボールランド30と、複数の半田ボールランド30に形成される半田ボールと、前記半田ボールランド30を露出させる、前記半田ボールランド30の半径より小さい半径を有する複数の開口領域37を限定し、前記基板の平面を塗布するマスク層とを備える。
【選択図】図3
Description
図2A及び図2Bは、各々、本発明の一実施形態によるBGA半導体パッケージの半田ボールランドを示す平面図である。図2A及び図2Bに示すように、BGA半導体パッケージ用(図示せず)基板の半田ボール実装面2の上に、半田ボールランド30が形成される。半田ボール実装面2の上に半田マスク36が塗布され、半田マスク36の塗布されていない領域には半田ボールランド30を露出させるマスク開口領域37が設けられる。
図3は、本発明の一実施形態によるBGA半導体パッケージの半田ボール実装面を示す平面図である。
図4は、本発明の一実施形態によるBGA半導体パッケージの半田ボールランドを示す平面図である。
図5は、本発明の一実施形態によるBGA半導体パッケージの半田ボールランドを示す平面図である。
図6は、本発明の一実施形態によるBGA半導体パッケージの半田ボールランドを示す平面図である。
本発明によるBGA半導体パッケージは、SMD型とNSMD型とを混合した半田ボールランド構造を採用にすることによって、半田ボールの脱落、パターンクラック(pattern crack)、並びに半田ボールランドの分離等の現象を防止することができ、且つ、基板に対する半田ボールの高い融着力によりBGA半導体パッケージの信頼性を高めることができる。
A1 第1周縁部
A2 第2周縁部
2C 半田ボール実装面の中心
30 半田ボールランド
30b ランド端
30c ランドセンター
34 パターン連結部
36 半田マスク
37 開口領域
37a 第1開口端
37b 第2開口端
40 半田ボールランド
40a ランド端
40b ランド端
40c ランドセンター
44 パターン連結部
47 開口領域
50 半田ボールランド
50c ランドセンター
54 パターン連結部
57 開口領域
58 円弧状の溝
59 直線状の溝
60 半田ボールランド
60cランドセンター
68 円弧状の溝
69 直線状の溝
Claims (12)
- 基板と、
前記基板上に形成され第1周縁部及び第2周縁部を有する少なくとも一つの端子ランドと、
前記端子ランドに形成される少なくとも一つの接続端子と、
前記基板上に塗布され前記端子ランドを露出させる少なくとも一つの開口領域を限定するマスク層と、を備える半導体デバイスにおいて、
前記マスク層は前記端子ランドの第1周縁部上に塗布され、前記第2周縁部は前記マスク層の開口領域を通して露出することを特徴とする、半導体デバイス。 - 前記第1周縁部は前記基板の中心側に向かい、前記第2周縁部は前記中心の反対側に向かうことを特徴とする、請求項1に記載の半導体デバイス。
- 前記接続端子は半田ボールを備えることを特徴とする、請求項1に記載の半導体デバイス。
- 前記基板は印刷回路基板、シリコン基板、並びにフレキシブル回路テープを備えることを特徴とする、請求項1に記載の半導体デバイス。
- 基板と、
前記基板上に形成される複数の半田ボールランドと、
前記基板上に塗布され前記半田ボールランドを露出させる複数の開口領域を限定するマスク層と、
前記半田ボールランドに形成される複数の接続ボールと、
前記半田ボールランドの中心を通して前記基板の表面の中心から延長され、第1接点において前記半田ボールランドのランド端と接し、第2接点において前記開口領域の開口端と接する第1延長線と、
前記半田ボールランドの中心からスタートして前記第1延長線と反対側に延長され、第3接点において前記ランド端と接し、第4接点において前記開口領域の開口端と接する第2延長線と、を有する半導体パッケージにおいて、
前記第1接点と前記半田ボールランドの中心との間の距離が第1距離で、前記第2接点と半田ボールランドの中心との間の距離が第2距離で、前記第1距離は前記第2距離より長く、
前記第3接点と前記半田ボールランドの中心との間の距離が第3距離であり、前記第4接点と前記半田ボールランドの中心との間の距離が第4距離で、前記第3距離は前記第4距離より短いことを特徴とする、半導体パッケージ。 - 前記複数の半田ボールランドの各々は第1半径を有し、
前記開口領域の第1開口端は前記第1半径より大きい第2半径を有し、
前記開口領域の第2開口端は前記第1半径より小さい第3半径を有することを特徴とする、請求項5に記載の半導体パッケージ。 - 放射状の形状に配置される一対の第3開口端を更に備える半導体パッケージにおいて、前記第1開口端は前記第2延長線を中心軸にして約160°〜180°間に第1角度を形成し、前記第2開口端は前記第1延長線を中心軸にして180°〜300°間に第2角度を形成することを特徴とする、請求項6に記載の半導体パッケージ。
- 前記第1角度は約150°であることを特徴とする、請求項7に記載の半導体パッケージ。
- 前記開口領域は第4半径を有し、前記半田ボールランドの第1ランド端は前記第4半径より小さい第5半径を有し、前記半田ボールランドの第2ランド端は前記第4半径より大きい第6半径を有することを特徴とする、請求項7に記載の半導体パッケージ。
- 前記第1ランド端は第2延長線を中心軸にして60°〜180°間の円弧を限定することを特徴とする、請求項9に記載の半導体パッケージ。
- 前記円弧が約150°であることを特徴とする、請求項10に記載の半導体パッケージ。
- 前記基板は印刷回路基板、シリコン基板、並びにフレキシブル回路テープを備えることを特徴とする、請求項7に記載の半導体パッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0052328A KR100523330B1 (ko) | 2003-07-29 | 2003-07-29 | Smd 및 nsmd 복합형 솔더볼 랜드 구조를 가지는bga 반도체 패키지 |
KR2003-052328 | 2003-07-29 |
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JP2004213368A Division JP4349988B2 (ja) | 2003-07-29 | 2004-07-21 | 改善された半田ボールランドの構造を有する半導体パッケージ |
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JP2009117862A true JP2009117862A (ja) | 2009-05-28 |
JP5090385B2 JP5090385B2 (ja) | 2012-12-05 |
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JP2004213368A Active JP4349988B2 (ja) | 2003-07-29 | 2004-07-21 | 改善された半田ボールランドの構造を有する半導体パッケージ |
JP2009016637A Expired - Fee Related JP5090385B2 (ja) | 2003-07-29 | 2009-01-28 | 改善された半田ボールランドの構造を有する半導体パッケージ |
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JP (2) | JP4349988B2 (ja) |
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JP2014103152A (ja) * | 2012-11-16 | 2014-06-05 | Renesas Electronics Corp | 半導体装置 |
US10014248B2 (en) | 2014-06-27 | 2018-07-03 | Sony Corporation | Semiconductor device with less positional deviation between aperture and solder |
US10720402B2 (en) | 2014-06-27 | 2020-07-21 | Sony Corporation | Semiconductor device and method of manufacturing the same |
US10867950B2 (en) | 2014-06-27 | 2020-12-15 | Sony Corporation | Semiconductor device with a gap control electrode and method of manufacturing the semiconductor device |
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US6818545B2 (en) | 2001-03-05 | 2004-11-16 | Megic Corporation | Low fabrication cost, fine pitch and high reliability solder bump |
US20060163729A1 (en) * | 2001-04-18 | 2006-07-27 | Mou-Shiung Lin | Structure and manufacturing method of a chip scale package |
KR100523330B1 (ko) * | 2003-07-29 | 2005-10-24 | 삼성전자주식회사 | Smd 및 nsmd 복합형 솔더볼 랜드 구조를 가지는bga 반도체 패키지 |
US7416106B1 (en) * | 2003-09-29 | 2008-08-26 | Emc Corporation | Techniques for creating optimized pad geometries for soldering |
TWI358776B (en) * | 2003-11-08 | 2012-02-21 | Chippac Inc | Flip chip interconnection pad layout |
US8853001B2 (en) * | 2003-11-08 | 2014-10-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming pad layout for flipchip semiconductor die |
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US20070105277A1 (en) | 2004-11-10 | 2007-05-10 | Stats Chippac Ltd. | Solder joint flip chip interconnection |
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Also Published As
Publication number | Publication date |
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KR100523330B1 (ko) | 2005-10-24 |
JP5090385B2 (ja) | 2012-12-05 |
US7064435B2 (en) | 2006-06-20 |
JP2005051240A (ja) | 2005-02-24 |
JP4349988B2 (ja) | 2009-10-21 |
KR20050013773A (ko) | 2005-02-05 |
US20050023683A1 (en) | 2005-02-03 |
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