JP2009076706A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009076706A5 JP2009076706A5 JP2007244624A JP2007244624A JP2009076706A5 JP 2009076706 A5 JP2009076706 A5 JP 2009076706A5 JP 2007244624 A JP2007244624 A JP 2007244624A JP 2007244624 A JP2007244624 A JP 2007244624A JP 2009076706 A5 JP2009076706 A5 JP 2009076706A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- semiconductor substrates
- container
- base substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 51
- 239000000758 substrate Substances 0.000 claims 49
- 239000013078 crystal Substances 0.000 claims 41
- 238000000034 method Methods 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 9
- 150000002500 ions Chemical class 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007244624A JP5250228B2 (ja) | 2007-09-21 | 2007-09-21 | 半導体装置の作製方法 |
| US12/211,933 US8309429B2 (en) | 2007-09-21 | 2008-09-17 | Method for manufacturing semiconductor substrate and semiconductor device |
| KR20080091688A KR101494627B1 (ko) | 2007-09-21 | 2008-09-18 | 반도체 기판 및 반도체 장치의 제작 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007244624A JP5250228B2 (ja) | 2007-09-21 | 2007-09-21 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009076706A JP2009076706A (ja) | 2009-04-09 |
| JP2009076706A5 true JP2009076706A5 (enExample) | 2010-08-19 |
| JP5250228B2 JP5250228B2 (ja) | 2013-07-31 |
Family
ID=40472111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007244624A Expired - Fee Related JP5250228B2 (ja) | 2007-09-21 | 2007-09-21 | 半導体装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8309429B2 (enExample) |
| JP (1) | JP5250228B2 (enExample) |
| KR (1) | KR101494627B1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5498670B2 (ja) * | 2007-07-13 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法 |
| TWI437696B (zh) | 2007-09-21 | 2014-05-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP5452900B2 (ja) * | 2007-09-21 | 2014-03-26 | 株式会社半導体エネルギー研究所 | 半導体膜付き基板の作製方法 |
| JP2009094488A (ja) * | 2007-09-21 | 2009-04-30 | Semiconductor Energy Lab Co Ltd | 半導体膜付き基板の作製方法 |
| TWI493609B (zh) * | 2007-10-23 | 2015-07-21 | Semiconductor Energy Lab | 半導體基板、顯示面板及顯示裝置的製造方法 |
| JP5619474B2 (ja) * | 2009-05-26 | 2014-11-05 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| WO2011017179A2 (en) | 2009-07-28 | 2011-02-10 | Gigasi Solar, Inc. | Systems, methods and materials including crystallization of substrates via sub-melt laser anneal, as well as products produced by such processes |
| JP5713603B2 (ja) * | 2009-09-02 | 2015-05-07 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| JP2011077504A (ja) * | 2009-09-02 | 2011-04-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US20110165721A1 (en) * | 2009-11-25 | 2011-07-07 | Venkatraman Prabhakar | Systems, methods and products including features of laser irradiation and/or cleaving of silicon with other substrates or layers |
| US8741785B2 (en) | 2011-10-27 | 2014-06-03 | Applied Materials, Inc. | Remote plasma radical treatment of silicon oxide |
| KR20130104546A (ko) | 2012-03-14 | 2013-09-25 | 삼성디스플레이 주식회사 | 도너 필름용 트레이 |
| JP6245791B2 (ja) * | 2012-03-27 | 2017-12-13 | 日亜化学工業株式会社 | 縦型窒化物半導体素子およびその製造方法 |
| FR3041364B1 (fr) * | 2015-09-18 | 2017-10-06 | Soitec Silicon On Insulator | Procede de transfert de paves monocristallins |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| US6048411A (en) * | 1997-05-12 | 2000-04-11 | Silicon Genesis Corporation | Silicon-on-silicon hybrid wafer assembly |
| JP3324469B2 (ja) * | 1997-09-26 | 2002-09-17 | 信越半導体株式会社 | Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ |
| US6287941B1 (en) * | 1999-04-21 | 2001-09-11 | Silicon Genesis Corporation | Surface finishing of SOI substrates using an EPI process |
| US6653209B1 (en) * | 1999-09-30 | 2003-11-25 | Canon Kabushiki Kaisha | Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device |
| US6583440B2 (en) * | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
| FR2835097B1 (fr) * | 2002-01-23 | 2005-10-14 | Procede optimise de report d'une couche mince de carbure de silicium sur un substrat d'accueil | |
| JP4182323B2 (ja) | 2002-02-27 | 2008-11-19 | ソニー株式会社 | 複合基板、基板製造方法 |
| US7119365B2 (en) * | 2002-03-26 | 2006-10-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
| JP4091338B2 (ja) * | 2002-05-17 | 2008-05-28 | 株式会社日立ハイテクインスツルメンツ | 半導体チップの移送装置 |
| KR100511656B1 (ko) * | 2002-08-10 | 2005-09-07 | 주식회사 실트론 | 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼 |
| US6818529B2 (en) * | 2002-09-12 | 2004-11-16 | Applied Materials, Inc. | Apparatus and method for forming a silicon film across the surface of a glass substrate |
| TWI301641B (enExample) * | 2002-09-19 | 2008-10-01 | Ind Tech Res Inst | |
| TW200415726A (en) * | 2002-12-05 | 2004-08-16 | Adv Lcd Tech Dev Ct Co Ltd | Plasma processing apparatus and plasma processing method |
| US6759277B1 (en) * | 2003-02-27 | 2004-07-06 | Sharp Laboratories Of America, Inc. | Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates |
| US7253040B2 (en) * | 2003-08-05 | 2007-08-07 | Sharp Kabushiki Kaisha | Fabrication method of semiconductor device |
| JP4581348B2 (ja) | 2003-08-26 | 2010-11-17 | 信越半導体株式会社 | 貼り合わせウエーハの製造方法およびｓｏｉウエーハ |
| JP4759919B2 (ja) * | 2004-01-16 | 2011-08-31 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
| JP4407384B2 (ja) * | 2004-05-28 | 2010-02-03 | 株式会社Ｓｕｍｃｏ | Ｓｏｉ基板の製造方法 |
| US6987063B2 (en) * | 2004-06-10 | 2006-01-17 | Freescale Semiconductor, Inc. | Method to reduce impurity elements during semiconductor film deposition |
| JP4934966B2 (ja) * | 2005-02-04 | 2012-05-23 | 株式会社Ｓｕｍｃｏ | Ｓｏｉ基板の製造方法 |
| JP2009507363A (ja) * | 2005-07-27 | 2009-02-19 | シリコン・ジェネシス・コーポレーション | 制御された劈開プロセスを用いてプレート上の複数タイル部分を形成する方法および構造 |
| US7691730B2 (en) * | 2005-11-22 | 2010-04-06 | Corning Incorporated | Large area semiconductor on glass insulator |
| EP2002484A4 (en) * | 2006-04-05 | 2016-06-08 | Silicon Genesis Corp | METHOD AND STRUCTURE FOR MANUFACTURING PHOTOVOLTAIC CELLS USING A LAYER TRANSFER PROCESS |
| US7579654B2 (en) * | 2006-05-31 | 2009-08-25 | Corning Incorporated | Semiconductor on insulator structure made using radiation annealing |
| US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
| US8124499B2 (en) * | 2006-11-06 | 2012-02-28 | Silicon Genesis Corporation | Method and structure for thick layer transfer using a linear accelerator |
| WO2008123116A1 (en) * | 2007-03-26 | 2008-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Soi substrate and method for manufacturing soi substrate |
| WO2008123117A1 (en) * | 2007-03-26 | 2008-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Soi substrate and method for manufacturing soi substrate |
| CN101657882B (zh) * | 2007-04-13 | 2012-05-30 | 株式会社半导体能源研究所 | 显示器件、用于制造显示器件的方法、以及soi衬底 |
| JP5460984B2 (ja) * | 2007-08-17 | 2014-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI437696B (zh) * | 2007-09-21 | 2014-05-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP2009094488A (ja) * | 2007-09-21 | 2009-04-30 | Semiconductor Energy Lab Co Ltd | 半導体膜付き基板の作製方法 |
| JP5452900B2 (ja) * | 2007-09-21 | 2014-03-26 | 株式会社半導体エネルギー研究所 | 半導体膜付き基板の作製方法 |
-
2007
- 2007-09-21 JP JP2007244624A patent/JP5250228B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-17 US US12/211,933 patent/US8309429B2/en not_active Expired - Fee Related
- 2008-09-18 KR KR20080091688A patent/KR101494627B1/ko not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009076706A5 (enExample) | ||
| US9969609B2 (en) | MEMS device | |
| JP2009111375A5 (enExample) | ||
| JP2014515559A5 (enExample) | ||
| JP2009004736A5 (enExample) | ||
| TWI655683B (zh) | 承載晶圓與其製造方法、封裝半導體元件之製造方法 | |
| JP2009094496A5 (enExample) | ||
| JP2008270775A5 (enExample) | ||
| CN106206262A (zh) | 极紫外光刻的薄膜、光刻方法和制造半导体器件的方法 | |
| JP2009135472A5 (enExample) | ||
| JP2008523631A5 (enExample) | ||
| JP2010093241A5 (enExample) | ||
| TW201108386A (en) | Method and apparatus for producing three-dimensional integrated circuit | |
| JP2009111363A5 (enExample) | ||
| JP2008311621A5 (enExample) | ||
| EP1978554A3 (en) | Method for manufacturing semiconductor substrate comprising implantation and separation steps | |
| JP2015142083A5 (enExample) | ||
| TWI456689B (zh) | Ｓｏｉ晶圓的製造方法 | |
| JP2009158942A5 (enExample) | ||
| JP2009135469A5 (enExample) | ||
| JP2008270774A5 (enExample) | ||
| CN103890906A (zh) | 用于生产机械柔性的硅基底的方法 | |
| TWI579971B (zh) | 半導體裝置之製造方法 | |
| JP2009224769A5 (enExample) | ||
| JP2006019429A5 (enExample) |