JP2009076706A - 半導体基板及び半導体装置の作製方法 - Google Patents
半導体基板及び半導体装置の作製方法 Download PDFInfo
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- JP2009076706A JP2009076706A JP2007244624A JP2007244624A JP2009076706A JP 2009076706 A JP2009076706 A JP 2009076706A JP 2007244624 A JP2007244624 A JP 2007244624A JP 2007244624 A JP2007244624 A JP 2007244624A JP 2009076706 A JP2009076706 A JP 2009076706A
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- single crystal
- crystal semiconductor
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Images
Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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Abstract
【解決手段】複数の単結晶半導体基板を配列させた後、配列されたままの状態の複数の単結晶半導体基板に一のベース基板を重ね合わせることで、一のベース基板と該複数の単結晶半導体基板とを貼り合わせる。そして、複数の各単結晶半導体基板を分割することで、ベース基板上に複数の単結晶半導体層を形成する。なお、複数の単結晶半導体基板を配列させて一時的に収容するための容器(トレイ)を用意し、複数の単結晶半導体基板をトレイ内に配列させたまま、上記貼り合わせを行う。次に、複数の単結晶半導体層内に存在する結晶欠陥を低減させるために、複数の単結晶半導体層にレーザビームを照射するが、レーザビームの照射前或いは照射後に、複数の単結晶半導体層をエッチングにより薄膜化する。
【選択図】図1
Description
本実施の形態では、複数の単結晶半導体層を基板上に有するSOI構造を有する半導体基板およびその作製方法について説明する。
本実施の形態では、単結晶半導体基板の再生処理について説明する。図8(B)に示す単結晶半導体層115が分離された単結晶半導体基板117を再生処理する。図11を用いて、単結晶半導体基板の再生処理を説明する。
本実施の形態では、半導体基板100を用いた半導体装置の作製方法の一例として、半導体素子の一つである薄膜トランジスタを作製する方法を説明する。複数の薄膜トランジスタを組み合わせることで、各種の半導体装置が形成される。本実施の形態では、実施の形態2の作製方法で作製した半導体基板100を用いることにする。
101 ベース基板
102 絶縁層
104 接合層
110 単結晶半導体基板
112 絶縁層
112a 絶縁膜
112b 絶縁膜
113 損傷領域
114 接合層
115 単結晶半導体層
116 単結晶半導体層
117 単結晶半導体基板
117a 凸部
117b 分離面
118 単結晶半導体基板
121 イオンビーム
122 レーザビーム
500 RFタグ
501 アンテナ
502 集積回路
503 電源回路
504 復調回路
505 変調回路
506 レギュレータ
507 制御回路
509 メモリ
603 半導体膜
604 半導体膜
606 ゲート絶縁膜
607 電極
608 不純物領域
609 不純物領域
610 サイドウォール
611 高濃度不純物領域
612 低濃度不純物領域
613 チャネル形成領域
614 高濃度不純物領域
615 低濃度不純物領域
616 チャネル形成領域
617 トランジスタ
618 トランジスタ
619 絶縁膜
620 絶縁膜
621 導電膜
622 導電膜
800 基板
801 演算回路
802 演算回路用制御部
803 命令解析部
804 制御部
805 タイミング制御部
806 レジスタ
807 レジスタ制御部
808 バスインターフェース
809 メモリ
820 メモリ用インターフェース
1600 素子基板
1601 トランジスタ
1602 トランジスタ
1603 スイッチング用トランジスタ
1604 駆動用トランジスタ
1605 発光素子
1606 画素電極
1607 電界発光層
1608 対向電極
1610 素子基板
1611 トランジスタ
1612 トランジスタ
1613 トランジスタ
1614 対向基板
1615 液晶セル
1616 画素電極
1617 対向電極
1618 液晶
2001 トランジスタ
2002 トランジスタ
2003 配線
2004 配線
2005 配線
2006 配線
2007 配線
2101 本体
2102 表示部
2103 音声入力部
2104 音声出力部
2105 操作キー
2401 筐体
2402 表示部
2403 スピーカー部
2601 本体
2602 表示部
2603 筐体
2604 外部接続ポート
2605 リモコン受信部
2606 受像部
2607 バッテリー
2608 音声入力部
2609 操作キー
2610 接眼部
3001 トランジスタ
3002 トランジスタ
3003 トランジスタ
3004 トランジスタ
3005 半導体膜
3006 半導体膜
3007 配線
3008 配線
3009 配線
3010 配線
3011 配線
3012 配線
Claims (10)
- 複数の単結晶半導体基板を容器内に配列させた状態で、前記複数の単結晶半導体基板とベース基板とを貼り合わせ、
前記複数の各単結晶半導体基板を分割することで、前記ベース基板上に複数の単結晶半導体層を形成し、
前記複数の単結晶半導体層にレーザビームを照射する前或いは照射した後に、前記複数の単結晶半導体層をエッチングにより薄膜化することを特徴とする半導体基板の作製方法。 - 複数の単結晶半導体基板を容器内に配列させた状態で、前記複数の単結晶半導体基板に絶縁膜を形成し、
前記複数の単結晶半導体基板を前記容器内に配列させた状態で、前記絶縁膜を間に挟むように、前記複数の単結晶半導体基板とベース基板とを貼り合わせ、
前記複数の各単結晶半導体基板を分割することで、前記ベース基板上に複数の単結晶半導体層を形成し、
前記複数の単結晶半導体層にレーザビームを照射する前或いは照射した後に、前記複数の単結晶半導体層をエッチングにより薄膜化することを特徴とする半導体基板の作製方法。 - 複数の単結晶半導体基板を第1の容器内に配列させた状態で、前記複数の単結晶半導体基板に絶縁膜を形成し、
前記複数の単結晶半導体基板を第2の容器内に配列させた状態で、前記絶縁膜を間に挟むように、前記複数の単結晶半導体基板とベース基板とを貼り合わせ、
前記複数の各単結晶半導体基板を分割することで、前記ベース基板上に複数の単結晶半導体層を形成し、
前記複数の単結晶半導体層にレーザビームを照射する前或いは照射した後に、前記複数の単結晶半導体層をエッチングにより薄膜化することを特徴とする半導体基板の作製方法。 - 複数の単結晶半導体基板を容器内に配列させた状態で、前記複数の単結晶半導体基板にドーピングを行うことで、前記複数の各単結晶半導体基板に損傷領域を形成し、
前記複数の単結晶半導体基板を前記容器内に配列させた状態で、前記複数の単結晶半導体基板とベース基板とを貼り合わせ、
前記複数の各単結晶半導体基板を前記損傷領域において分割することで、前記ベース基板上に複数の単結晶半導体層を形成し、
前記複数の単結晶半導体層にレーザビームを照射する前或いは照射した後に、前記複数の単結晶半導体層をエッチングにより薄膜化することを特徴とする半導体基板の作製方法。 - 複数の単結晶半導体基板を第1の容器内に配列させた状態で、前記複数の単結晶半導体基板にドーピングを行うことで、前記複数の各単結晶半導体基板に損傷領域を形成し、
前記複数の単結晶半導体基板を第2の容器内に配列させた状態で、前記複数の単結晶半導体基板とベース基板とを貼り合わせ、
前記複数の各単結晶半導体基板を前記損傷領域において分割することで、前記ベース基板上に複数の単結晶半導体層を形成し、
前記複数の単結晶半導体層にレーザビームを照射する前或いは照射した後に、前記複数の単結晶半導体層をエッチングにより薄膜化することを特徴とする半導体基板の作製方法。 - 複数の単結晶半導体基板を容器内に配列させた状態で、前記複数の単結晶半導体基板とベース基板とを貼り合わせ、
前記複数の各単結晶半導体基板を分割することで、前記ベース基板上に複数の単結晶半導体層を形成し、
前記複数の単結晶半導体層にレーザビームを照射する前或いは照射した後に、前記複数の単結晶半導体層をエッチングにより薄膜化し、
前記薄膜化した前記複数の単結晶半導体層を用いて半導体素子を形成することを特徴とする半導体装置の作製方法。 - 複数の単結晶半導体基板を容器内に配列させた状態で、前記複数の単結晶半導体基板に絶縁膜を形成し、
前記複数の単結晶半導体基板を前記容器内に配列させた状態で、前記絶縁膜を間に挟むように、前記複数の単結晶半導体基板とベース基板とを貼り合わせ、
前記複数の各単結晶半導体基板を分割することで、前記ベース基板上に複数の単結晶半導体層を形成し、
前記複数の単結晶半導体層にレーザビームを照射する前或いは照射した後に、前記複数の単結晶半導体層をエッチングにより薄膜化し、
前記薄膜化した前記複数の単結晶半導体層を用いて半導体素子を形成することを特徴とする半導体装置の作製方法。 - 複数の単結晶半導体基板を第1の容器内に配列させた状態で、前記複数の単結晶半導体基板に絶縁膜を形成し、
前記複数の単結晶半導体基板を第2の容器内に配列させた状態で、前記絶縁膜を間に挟むように、前記複数の単結晶半導体基板とベース基板とを貼り合わせ、
前記複数の各単結晶半導体基板を分割することで、前記ベース基板上に複数の単結晶半導体層を形成し、
前記複数の単結晶半導体層にレーザビームを照射する前或いは照射した後に、前記複数の単結晶半導体層をエッチングにより薄膜化し、
前記薄膜化した前記複数の単結晶半導体層を用いて半導体素子を形成することを特徴とする半導体装置の作製方法。 - 複数の単結晶半導体基板を容器内に配列させた状態で、前記複数の単結晶半導体基板にドーピングを行うことで、前記複数の各単結晶半導体基板に損傷領域を形成し、
前記複数の単結晶半導体基板を前記容器内に配列させた状態で、前記複数の単結晶半導体基板とベース基板とを貼り合わせ、
前記複数の各単結晶半導体基板を前記損傷領域において分割することで、前記ベース基板上に複数の単結晶半導体層を形成し、
前記複数の単結晶半導体層にレーザビームを照射する前或いは照射した後に、前記複数の単結晶半導体層をエッチングにより薄膜化し、
前記薄膜化した前記複数の単結晶半導体層を用いて半導体素子を形成することを特徴とする半導体装置の作製方法。 - 複数の単結晶半導体基板を第1の容器内に配列させた状態で、前記複数の単結晶半導体基板にドーピングを行うことで、前記複数の各単結晶半導体基板に損傷領域を形成し、
前記複数の単結晶半導体基板を第2の容器内に配列させた状態で、前記複数の単結晶半導体基板とベース基板とを貼り合わせ、
前記複数の各単結晶半導体基板を前記損傷領域において分割することで、前記ベース基板上に複数の単結晶半導体層を形成し、
前記複数の単結晶半導体層にレーザビームを照射する前或いは照射した後に、前記複数の単結晶半導体層をエッチングにより薄膜化し、
前記薄膜化した前記複数の単結晶半導体層を用いて半導体素子を形成することを特徴とする半導体装置の作製方法。
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US20090081844A1 (en) | 2009-03-26 |
US8309429B2 (en) | 2012-11-13 |
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