JP2009071287A5 - - Google Patents

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Publication number
JP2009071287A5
JP2009071287A5 JP2008203852A JP2008203852A JP2009071287A5 JP 2009071287 A5 JP2009071287 A5 JP 2009071287A5 JP 2008203852 A JP2008203852 A JP 2008203852A JP 2008203852 A JP2008203852 A JP 2008203852A JP 2009071287 A5 JP2009071287 A5 JP 2009071287A5
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JP
Japan
Prior art keywords
semiconductor films
bond substrate
substrate
defect layer
base substrate
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JP2008203852A
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English (en)
Japanese (ja)
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JP5460984B2 (ja
JP2009071287A (ja
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Priority claimed from JP2008203852A external-priority patent/JP5460984B2/ja
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Publication of JP2009071287A5 publication Critical patent/JP2009071287A5/ja
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Publication of JP5460984B2 publication Critical patent/JP5460984B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008203852A 2007-08-17 2008-08-07 半導体装置の作製方法 Expired - Fee Related JP5460984B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008203852A JP5460984B2 (ja) 2007-08-17 2008-08-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007212679 2007-08-17
JP2007212679 2007-08-17
JP2008203852A JP5460984B2 (ja) 2007-08-17 2008-08-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009071287A JP2009071287A (ja) 2009-04-02
JP2009071287A5 true JP2009071287A5 (enExample) 2011-09-15
JP5460984B2 JP5460984B2 (ja) 2014-04-02

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JP2008203852A Expired - Fee Related JP5460984B2 (ja) 2007-08-17 2008-08-07 半導体装置の作製方法

Country Status (2)

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US (2) US7981766B2 (enExample)
JP (1) JP5460984B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals

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JP5268305B2 (ja) 2007-08-24 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8232598B2 (en) * 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
TWI437696B (zh) 2007-09-21 2014-05-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5250228B2 (ja) * 2007-09-21 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009094488A (ja) * 2007-09-21 2009-04-30 Semiconductor Energy Lab Co Ltd 半導体膜付き基板の作製方法
JP5452900B2 (ja) * 2007-09-21 2014-03-26 株式会社半導体エネルギー研究所 半導体膜付き基板の作製方法
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
JP2012038932A (ja) * 2010-08-06 2012-02-23 Sumco Corp 半導体ウェーハの薄厚化方法および貼り合せウェーハの製造方法
JP2012150029A (ja) * 2011-01-20 2012-08-09 Yokogawa Electric Corp 振動式トランスデューサおよび振動式トランスデューサの製造方法
JP5417399B2 (ja) * 2011-09-15 2014-02-12 信越化学工業株式会社 複合ウェーハの製造方法
US9543197B2 (en) * 2012-12-19 2017-01-10 Intel Corporation Package with dielectric or anisotropic conductive (ACF) buildup layer
US9433077B2 (en) 2014-02-14 2016-08-30 International Business Machines Corporation Substrate device and electric circuit arrangement having first substrate section perpendicular to second substrate section
DE102014014422A1 (de) * 2014-09-29 2016-03-31 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit einer Löcher aufweisenden Aufnahmeschicht
DE102017117873B4 (de) 2016-09-01 2023-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiterstruktur und zugehöriges Verfahren
US10438838B2 (en) 2016-09-01 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and related method
US10940611B2 (en) * 2018-07-26 2021-03-09 Halo Industries, Inc. Incident radiation induced subsurface damage for controlled crack propagation in material cleavage

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JP5268305B2 (ja) 2007-08-24 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals

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