JP2009062669A - 細長い金属含有ナノ構造の光誘起形成 - Google Patents
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- 239000002184 metal Substances 0.000 title claims abstract description 133
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 133
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 104
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 33
- 239000010949 copper Substances 0.000 claims abstract description 172
- 229910052802 copper Inorganic materials 0.000 claims abstract description 130
- 238000000034 method Methods 0.000 claims abstract description 117
- -1 metal halide compound Chemical class 0.000 claims abstract description 114
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 70
- 239000002070 nanowire Substances 0.000 claims abstract description 42
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 28
- 150000002367 halogens Chemical class 0.000 claims abstract description 28
- 239000002344 surface layer Substances 0.000 claims description 90
- 239000010410 layer Substances 0.000 claims description 85
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 82
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 49
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 49
- 229910021589 Copper(I) bromide Inorganic materials 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 16
- 150000005309 metal halides Chemical class 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- 239000002073 nanorod Substances 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 description 86
- 239000007789 gas Substances 0.000 description 32
- 239000000460 chlorine Substances 0.000 description 22
- 238000002474 experimental method Methods 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 18
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000002105 nanoparticle Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 229910001512 metal fluoride Inorganic materials 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 5
- 229910052794 bromium Inorganic materials 0.000 description 5
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229940125898 compound 5 Drugs 0.000 description 2
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- GZUXJHMPEANEGY-UHFFFAOYSA-N bromomethane Chemical compound BrC GZUXJHMPEANEGY-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/23—Sheet including cover or casing
- Y10T428/239—Complete cover or casing
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- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
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- ing And Chemical Polishing (AREA)
Abstract
【解決手段】ハロゲン化銅化合物等のハロゲン化金属化合物表面5をハロゲン含有プラズマ等の光子含有雰囲気に晒し、少なくとも1つの細長い金属ナノワイヤ(NW)、金属ナノロッド等々の金属含有ナノ構造6の形成を開始する工程を含む。また、本発明にかかる方法により得られた細長い金属含有ナノ構造6を提供する。
【選択図】図1C
Description
Adv.Mater.2001、13(1)、62〜65頁 Nano Letter、2(12)、2002、1333〜1338頁 Nanotechnology、18(2007)035608、4頁
少なくとも金属表面層を含む基板を提供する工程と、
金属表面層の少なくとも一部を、例えば弗化金属化合物とは異なるハロゲン化金属化合物のようなハロゲン化金属化合物に変える工程と、
例えば弗化金属化合物とは異なるハロゲン化金属化合物のようなハロゲン化金属化合物を光子含有雰囲気に晒して、細長いナノ構造を含む少なくとも1つの金属の形成を開始する工程とを含む。
基板を提供する工程と、
基板の上に金属表面層を形成する工程とにより行われても良い。
金属表面層の上に、例えば誘電体材料のような材料の層を形成する工程と、
材料の層中に少なくとも1つの孔を形成する工程とを含んでも良い。
少なくとも金属表面層を含む基板を提供する工程と、
金属表面層の少なくとも一部を、例えば弗化金属化合物とは異なるハロゲン化金属化合物のような、ハロゲン化金属化合物に変える工程と、
例えば弗化金属化合物とは異なるハロゲン化金属化合物のようなハロゲン化金属化合物を、光子雰囲気に晒し、細長いナノ構造を含む少なくとも1つの金属の形成を介しする工程とを含む。
Heプラズマに晒すことによる、CuClXから開始されるCu−NWの形成
(*)300Wで7秒から開始
Heプラズマに晒すことによる、CuBrXから開始されるCu−NWの形成
本発明の具体例にかかる方法により形成されたCu−NWの特徴を表すオージェ電子分光(AES)実験
本発明の具体例にかかる方法で形成されたCu−NWの特徴を表すイオンビーム分析(IBA)
本発明の具体例にかかる方法で形成されたCu−NWの特徴を表すGI−XRD実験
本発明の具体例にかかる方法で形成されたCu−NWの特徴を表すEDX(エネルギー分散X線分析)実験
Claims (26)
- 基板(1)の上に、少なくとも1つの細長い金属含有ナノ構造(6)を、反応チャンバ中で形成する方法であって、
基板(1)の金属表面層(4)の少なくとも一部を、ハロゲン化金属化合物に変える工程と、
ハロゲン化金属化合物(5)を光子含有雰囲気に晒して、少なくとも1つの細長い金属含有ナノ構造(6)の形成を開始する工程とを含み、
光子含有雰囲気に晒す間、揮発性のハロゲン化金属生成物が形成され、少なくとも1つの細長い金属含有ナノ構造を基板上に形成し始めるために、反応チャンバ中の揮発性のハロゲン化金属生成物の濃度が揮発性のハロゲン化金属生成物の飽和レベルより大きいことを特徴とする方法。 - 金属が銅であり、細長いナノ構造(6)が細長い銅含有ナノ構造であり、
少なくとも金属表面層(4)を含む基板(1)を提供する工程が、少なくとも銅表面層を含む基板(1)を提供する工程により行われ、
金属表面層(4)の少なくとも一部をハロゲン化金属化合物に変える工程が、銅表面層の少なくとも一部をハロゲン化銅化合物に変える工程により行われる請求項1に記載の方法。 - 金属表面層(4)の少なくとも一部をハロゲン化金属化合物に変える工程が、金属表面層(4)の少なくとも一部をハロゲン含有ガスに晒すことにより行われる請求項1または2に記載の方法。
- 金属表面層(4)の少なくとも一部をハロゲン化金属化合物に変える工程が、金属表面層(4)の少なくとも一部をハロゲン含有プラズマに晒すことにより行われる請求項1または2に記載の方法。
- 金属表面層(4)の少なくとも一部をハロゲン含有プラズマに晒す工程が、600ワット、10mTorrで、10秒間晒して行われる請求項4に記載の方法。
- ハロゲン含有プラズマが、HBr含有プラズマまたはCl2含有プラズマである請求項3〜5のいずれかに記載の方法。
- ハロゲン化金属化合物(5)を光子含有雰囲気に晒す工程が、ハロゲン化金属化合物(5)をHe、Ar、またはH含有プラズマに晒して行われる請求項1〜6のいずれかに記載の方法。
- ハロゲン化金属化合物(5)がCuClXであり、光子含有雰囲気がHeプラズマであり、
ハロゲン化金属化合物(5)を光子含有雰囲気に晒す工程が、1000ワット、30mTorr、基板バイアス無しで、少なくとも30秒間晒して行われる請求項7に記載の方法。 - ハロゲン化金属化合物(5)がCuBrXであり、光子含有雰囲気がHeプラズマであり、
ハロゲン化金属化合物(5)を光子含有雰囲気に晒す工程が、1000ワット、80mTorr、基板バイアス無しで、少なくとも30秒間晒して行われる請求項7に記載の方法。 - 晒す時間が、120秒間である請求項7または8に記載の方法。
- 少なくとも金属表面層(4)を含む基板(1)を提供する工程が、
基板(1)を提供する工程と、
基板(1)の上に金属表面層(4)を形成する工程とにより行われる請求項1〜10のいずれかに記載の方法。 - 更に、金属表面層(4)を形成する前に、保護層(2)および/またはバリア層(3)を基板(1)の上に形成する工程を含む請求項11に記載の方法。
- 更に、金属表面層(4)の少なくとも一部をハロゲン化金属化合物に変える前に、金属表面層(4)の上にパターン(10)を形成する工程を含む請求項1〜12のいずれかに記載の方法。
- 金属表面層(4)の上にパターン(10)を形成する工程が、
金属表面層(4)の上に材料の層(7)を形成する工程と、
材料の層(7)中に少なくとも1つの孔(8)を形成する工程とを含む請求項13に記載の方法。 - 材料の層(7)を形成する工程が、誘電体材料の層を形成して行われる請求項14に記載の方法。
- 更に、細長い金属含有ナノ構造(6)を形成した後に、パターン(10)を除去する工程を含む請求項13または15に記載の方法。
- 更に、ハロゲン化金属化合物(5)を光子含有雰囲気に晒す前に、基板(1)を洗浄する工程を含む請求項1〜16のいずれかに記載の方法。
- 基板(1)の洗浄が、H2プラズマまたはN2プラズマで行われる請求項17に記載の方法。
- 細長い銅含有ナノ構造を形成するための、請求項1〜18のいずれかに記載の方法の使用。
- 金属とハロゲン化金属化合物の組み合わせを含む細長い金属含有ナノ構造(6)であって、
金属が細長いナノ構造のコアを形成し、ハロゲン化金属化合物が細長いナノ構造のシェルを形成し、シェルは実質的にコアの周囲を完全に覆った細長い金属含有ナノ構造。 - 細長い金属含有ナノ構造(6)が、60%と99%の間の金属と、1%と40%の間のハロゲン化金属とを含む請求項20に記載の細長い金属含有ナノ構造。
- 細長い金属含有ナノ構造(6)が、95%より多い金属と、5%より少ないハロゲン化金属とを含む請求項21に記載の細長い金属含有ナノ構造。
- 細長い金属含有ナノ構造(6)が長さと直径を有し、
細長い金属含有ナノ構造(6)の長さが、500nmと40μmの間であり、
細長い金属含有ナノ構造(6)の直径が、50nmと200nmの間である請求項20〜22のいずれかに記載の細長い金属含有ナノ構造。 - 金属が銅で、ハロゲン化金属がハロゲン化銅である請求項20〜23のいずれかに記載の細長い金属含有ナノ構造。
- ハロゲン化銅が、CuClXまたはCuBrXである請求項24に記載の細長い金属含有ナノ構造。
- 細長い金属含有ナノ構造(6)が、金属含有ナノワイヤである請求項20〜23のいずれかに記載の細長い金属含有ナノ構造。
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94812907P | 2007-07-05 | 2007-07-05 | |
US60/948,129 | 2007-07-05 | ||
US97084407P | 2007-09-07 | 2007-09-07 | |
US60/970,844 | 2007-09-07 | ||
EP07075949A EP2011592A1 (en) | 2007-07-05 | 2007-11-01 | Photon induced formation of metal comprising elongated nanostructures |
EP07075949.3 | 2007-11-01 | ||
US5084808P | 2008-05-06 | 2008-05-06 | |
US61/050,848 | 2008-05-06 |
Publications (2)
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JP6233639B2 (ja) | 2011-12-28 | 2017-11-22 | イマジニアリング株式会社 | ガス濃度推定装置 |
JP5810975B2 (ja) * | 2012-03-05 | 2015-11-11 | セイコーエプソン株式会社 | 偏光素子の製造方法 |
US10029916B2 (en) | 2012-06-22 | 2018-07-24 | C3Nano Inc. | Metal nanowire networks and transparent conductive material |
US9920207B2 (en) | 2012-06-22 | 2018-03-20 | C3Nano Inc. | Metal nanostructured networks and transparent conductive material |
US10020807B2 (en) | 2013-02-26 | 2018-07-10 | C3Nano Inc. | Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks |
US11274223B2 (en) | 2013-11-22 | 2022-03-15 | C3 Nano, Inc. | Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches |
US11343911B1 (en) | 2014-04-11 | 2022-05-24 | C3 Nano, Inc. | Formable transparent conductive films with metal nanowires |
US9183968B1 (en) | 2014-07-31 | 2015-11-10 | C3Nano Inc. | Metal nanowire inks for the formation of transparent conductive films with fused networks |
US11557487B2 (en) * | 2021-06-04 | 2023-01-17 | Tokyo Electron Limited | Etching metal during processing of a semiconductor structure |
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JP5237003B2 (ja) | 2013-07-17 |
JP2012169657A (ja) | 2012-09-06 |
EP2015352A3 (en) | 2009-11-11 |
EP2015352A2 (en) | 2009-01-14 |
US8114483B2 (en) | 2012-02-14 |
US8545595B2 (en) | 2013-10-01 |
US20120107550A1 (en) | 2012-05-03 |
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US20090011604A1 (en) | 2009-01-08 |
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