JP2009048182A - ポジ型レジスト組成物及びパターン形成方法 - Google Patents

ポジ型レジスト組成物及びパターン形成方法 Download PDF

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Publication number
JP2009048182A
JP2009048182A JP2008187728A JP2008187728A JP2009048182A JP 2009048182 A JP2009048182 A JP 2009048182A JP 2008187728 A JP2008187728 A JP 2008187728A JP 2008187728 A JP2008187728 A JP 2008187728A JP 2009048182 A JP2009048182 A JP 2009048182A
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Japan
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group
acid
examples
resin
carbon atoms
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JP2008187728A
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Japanese (ja)
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JP2009048182A5 (enExample
Inventor
Shinji Taruya
晋司 樽谷
Kenji Wada
健二 和田
Hideaki Tsubaki
英明 椿
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2008187728A priority Critical patent/JP2009048182A/ja
Publication of JP2009048182A publication Critical patent/JP2009048182A/ja
Publication of JP2009048182A5 publication Critical patent/JP2009048182A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2008187728A 2007-07-20 2008-07-18 ポジ型レジスト組成物及びパターン形成方法 Pending JP2009048182A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008187728A JP2009048182A (ja) 2007-07-20 2008-07-18 ポジ型レジスト組成物及びパターン形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007189977 2007-07-20
JP2008187728A JP2009048182A (ja) 2007-07-20 2008-07-18 ポジ型レジスト組成物及びパターン形成方法

Publications (2)

Publication Number Publication Date
JP2009048182A true JP2009048182A (ja) 2009-03-05
JP2009048182A5 JP2009048182A5 (enExample) 2011-06-23

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Family Applications (1)

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JP2008187728A Pending JP2009048182A (ja) 2007-07-20 2008-07-18 ポジ型レジスト組成物及びパターン形成方法

Country Status (5)

Country Link
US (1) US20090023096A1 (enExample)
EP (1) EP2017674A1 (enExample)
JP (1) JP2009048182A (enExample)
KR (1) KR20090009756A (enExample)
TW (1) TW200907579A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009142142A1 (ja) * 2008-05-23 2009-11-26 出光興産株式会社 脂環構造含有化合物、（メタ）アクリル酸エステル類、（メタ）アクリル系重合体並びにそれを含むポジ型レジスト組成物
JP2010237656A (ja) * 2009-03-09 2010-10-21 Sumitomo Chemical Co Ltd 化学増幅型フォトレジスト組成物及びパターン形成方法
JP2011033729A (ja) * 2009-07-30 2011-02-17 Fujifilm Corp 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP2013007020A (ja) * 2011-05-20 2013-01-10 Sumitomo Chemical Co Ltd 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP2013007031A (ja) * 2011-05-20 2013-01-10 Sumitomo Chemical Co Ltd 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP2013041249A (ja) * 2011-07-19 2013-02-28 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2013041242A (ja) * 2011-07-19 2013-02-28 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2013041251A (ja) * 2011-07-19 2013-02-28 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2014032388A (ja) * 2012-07-12 2014-02-20 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2014085475A (ja) * 2012-10-23 2014-05-12 Jsr Corp フォトレジスト組成物、レジストパターン形成方法、酸増殖剤、化合物及び化合物の製造方法
US9223208B2 (en) 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
JP2019206691A (ja) * 2018-05-24 2019-12-05 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5103420B2 (ja) * 2009-02-24 2012-12-19 富士フイルム株式会社 ネガ型現像用レジスト組成物を用いたパターン形成方法
JP5542043B2 (ja) * 2010-06-25 2014-07-09 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、及びレジスト膜
JP7696328B2 (ja) * 2020-02-21 2025-06-20 東京応化工業株式会社 レジストパターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08248561A (ja) * 1995-03-09 1996-09-27 Res Dev Corp Of Japan 光反応性組成物、該光反応性組成物を含有した酸反応性高分子組成物及び酸反応性樹脂層
JPH11158118A (ja) * 1997-12-03 1999-06-15 Sumitomo Chem Co Ltd アセト酢酸誘導体、その製法及び用途
JP2003233187A (ja) * 2002-02-08 2003-08-22 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2006178172A (ja) * 2004-12-22 2006-07-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2006328259A (ja) * 2005-05-27 2006-12-07 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8101200A (nl) * 1981-03-12 1982-10-01 Philips Nv Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal.
KR100647527B1 (ko) * 1999-04-01 2006-11-17 후지 샤신 필름 가부시기가이샤 원자외선 노광용 포지티브 포토레지스트 조성물
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP3989132B2 (ja) * 1999-06-04 2007-10-10 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6461791B1 (en) * 1999-10-13 2002-10-08 Shin-Etsu Chemical Co., Ltd. Polymers, chemical amplification resist compositions and patterning process
US7189491B2 (en) 2003-12-11 2007-03-13 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
JP4830442B2 (ja) 2005-10-19 2011-12-07 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JP4881686B2 (ja) * 2005-12-09 2012-02-22 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2008209889A (ja) 2007-01-31 2008-09-11 Fujifilm Corp ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08248561A (ja) * 1995-03-09 1996-09-27 Res Dev Corp Of Japan 光反応性組成物、該光反応性組成物を含有した酸反応性高分子組成物及び酸反応性樹脂層
JPH11158118A (ja) * 1997-12-03 1999-06-15 Sumitomo Chem Co Ltd アセト酢酸誘導体、その製法及び用途
JP2003233187A (ja) * 2002-02-08 2003-08-22 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2006178172A (ja) * 2004-12-22 2006-07-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2006328259A (ja) * 2005-05-27 2006-12-07 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009142142A1 (ja) * 2008-05-23 2009-11-26 出光興産株式会社 脂環構造含有化合物、（メタ）アクリル酸エステル類、（メタ）アクリル系重合体並びにそれを含むポジ型レジスト組成物
JP2009280538A (ja) * 2008-05-23 2009-12-03 Idemitsu Kosan Co Ltd 脂環構造含有化合物、（メタ）アクリル酸エステル類、（メタ）アクリル系重合体並びにそれを含むポジ型レジスト組成物
JP2010237656A (ja) * 2009-03-09 2010-10-21 Sumitomo Chemical Co Ltd 化学増幅型フォトレジスト組成物及びパターン形成方法
JP2011033729A (ja) * 2009-07-30 2011-02-17 Fujifilm Corp 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP2013007020A (ja) * 2011-05-20 2013-01-10 Sumitomo Chemical Co Ltd 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP2013007031A (ja) * 2011-05-20 2013-01-10 Sumitomo Chemical Co Ltd 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP2013041249A (ja) * 2011-07-19 2013-02-28 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2013041242A (ja) * 2011-07-19 2013-02-28 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2013041251A (ja) * 2011-07-19 2013-02-28 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
US9223208B2 (en) 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
JP2014032388A (ja) * 2012-07-12 2014-02-20 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2014085475A (ja) * 2012-10-23 2014-05-12 Jsr Corp フォトレジスト組成物、レジストパターン形成方法、酸増殖剤、化合物及び化合物の製造方法
JP2019206691A (ja) * 2018-05-24 2019-12-05 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP7295697B2 (ja) 2018-05-24 2023-06-21 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法

Also Published As

Publication number Publication date
EP2017674A1 (en) 2009-01-21
US20090023096A1 (en) 2009-01-22
KR20090009756A (ko) 2009-01-23
TW200907579A (en) 2009-02-16

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