KR20090009756A - 포지티브 레지스트 조성물 및 패턴형성방법 - Google Patents

포지티브 레지스트 조성물 및 패턴형성방법 Download PDF

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Publication number
KR20090009756A
KR20090009756A KR1020080070346A KR20080070346A KR20090009756A KR 20090009756 A KR20090009756 A KR 20090009756A KR 1020080070346 A KR1020080070346 A KR 1020080070346A KR 20080070346 A KR20080070346 A KR 20080070346A KR 20090009756 A KR20090009756 A KR 20090009756A
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KR
South Korea
Prior art keywords
group
acid
resin
resist composition
component
Prior art date
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Withdrawn
Application number
KR1020080070346A
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English (en)
Korean (ko)
Inventor
신지 타루타니
켄지 와다
히데아키 츠바키
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20090009756A publication Critical patent/KR20090009756A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020080070346A 2007-07-20 2008-07-18 포지티브 레지스트 조성물 및 패턴형성방법 Withdrawn KR20090009756A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007189977 2007-07-20
JPJP-P-2007-00189977 2007-07-20

Publications (1)

Publication Number Publication Date
KR20090009756A true KR20090009756A (ko) 2009-01-23

Family

ID=39864960

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080070346A Withdrawn KR20090009756A (ko) 2007-07-20 2008-07-18 포지티브 레지스트 조성물 및 패턴형성방법

Country Status (5)

Country Link
US (1) US20090023096A1 (enExample)
EP (1) EP2017674A1 (enExample)
JP (1) JP2009048182A (enExample)
KR (1) KR20090009756A (enExample)
TW (1) TW200907579A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120129828A (ko) * 2011-05-20 2012-11-28 스미또모 가가꾸 가부시키가이샤 화합물, 수지, 포토레지스트 조성물 및 포토레지스트 패턴의 제조방법

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009280538A (ja) * 2008-05-23 2009-12-03 Idemitsu Kosan Co Ltd 脂環構造含有化合物、（メタ）アクリル酸エステル類、（メタ）アクリル系重合体並びにそれを含むポジ型レジスト組成物
JP5103420B2 (ja) * 2009-02-24 2012-12-19 富士フイルム株式会社 ネガ型現像用レジスト組成物を用いたパターン形成方法
JP5775264B2 (ja) * 2009-03-09 2015-09-09 住友化学株式会社 化学増幅型フォトレジスト組成物及びパターン形成方法
JP5675070B2 (ja) * 2009-07-30 2015-02-25 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP5542043B2 (ja) * 2010-06-25 2014-07-09 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、及びレジスト膜
JP6163708B2 (ja) * 2011-05-20 2017-07-19 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP6013797B2 (ja) * 2011-07-19 2016-10-25 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5996944B2 (ja) * 2011-07-19 2016-09-21 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6013799B2 (ja) * 2011-07-19 2016-10-25 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
US9223208B2 (en) 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
JP6149511B2 (ja) * 2012-07-12 2017-06-21 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6079128B2 (ja) * 2012-10-23 2017-02-15 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
JP7295697B2 (ja) * 2018-05-24 2023-06-21 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP7696328B2 (ja) * 2020-02-21 2025-06-20 東京応化工業株式会社 レジストパターン形成方法

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NL8101200A (nl) * 1981-03-12 1982-10-01 Philips Nv Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal.
JP3418946B2 (ja) * 1995-03-09 2003-06-23 科学技術振興事業団 光反応性組成物、該光反応性組成物を含有した酸反応性高分子組成物及び酸反応性樹脂層
JP3975535B2 (ja) * 1997-12-03 2007-09-12 住友化学株式会社 アセト酢酸誘導体、その製法及び用途
KR100647527B1 (ko) * 1999-04-01 2006-11-17 후지 샤신 필름 가부시기가이샤 원자외선 노광용 포지티브 포토레지스트 조성물
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP3989132B2 (ja) * 1999-06-04 2007-10-10 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6461791B1 (en) * 1999-10-13 2002-10-08 Shin-Etsu Chemical Co., Ltd. Polymers, chemical amplification resist compositions and patterning process
JP3860044B2 (ja) * 2002-02-08 2006-12-20 富士フイルムホールディングス株式会社 ポジ型レジスト組成物
US7189491B2 (en) 2003-12-11 2007-03-13 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
JP4452608B2 (ja) * 2004-12-22 2010-04-21 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4687878B2 (ja) * 2005-05-27 2011-05-25 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4830442B2 (ja) 2005-10-19 2011-12-07 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JP4881686B2 (ja) * 2005-12-09 2012-02-22 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2008209889A (ja) 2007-01-31 2008-09-11 Fujifilm Corp ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120129828A (ko) * 2011-05-20 2012-11-28 스미또모 가가꾸 가부시키가이샤 화합물, 수지, 포토레지스트 조성물 및 포토레지스트 패턴의 제조방법

Also Published As

Publication number Publication date
EP2017674A1 (en) 2009-01-21
US20090023096A1 (en) 2009-01-22
TW200907579A (en) 2009-02-16
JP2009048182A (ja) 2009-03-05

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20080718

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid