JP2009038357A - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP2009038357A
JP2009038357A JP2008174222A JP2008174222A JP2009038357A JP 2009038357 A JP2009038357 A JP 2009038357A JP 2008174222 A JP2008174222 A JP 2008174222A JP 2008174222 A JP2008174222 A JP 2008174222A JP 2009038357 A JP2009038357 A JP 2009038357A
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Japan
Prior art keywords
semiconductor film
film
microcrystalline semiconductor
display device
gas
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Application number
JP2008174222A
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English (en)
Japanese (ja)
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JP2009038357A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008174222A priority Critical patent/JP2009038357A/ja
Publication of JP2009038357A publication Critical patent/JP2009038357A/ja
Publication of JP2009038357A5 publication Critical patent/JP2009038357A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing

Landscapes

  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008174222A 2007-07-06 2008-07-03 表示装置の作製方法 Withdrawn JP2009038357A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008174222A JP2009038357A (ja) 2007-07-06 2008-07-03 表示装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007179095 2007-07-06
JP2008174222A JP2009038357A (ja) 2007-07-06 2008-07-03 表示装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014003826A Division JP2014115668A (ja) 2007-07-06 2014-01-13 半導体装置

Publications (2)

Publication Number Publication Date
JP2009038357A true JP2009038357A (ja) 2009-02-19
JP2009038357A5 JP2009038357A5 (enExample) 2011-07-07

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Family Applications (4)

Application Number Title Priority Date Filing Date
JP2008174222A Withdrawn JP2009038357A (ja) 2007-07-06 2008-07-03 表示装置の作製方法
JP2014003826A Withdrawn JP2014115668A (ja) 2007-07-06 2014-01-13 半導体装置
JP2016074906A Withdrawn JP2016170417A (ja) 2007-07-06 2016-04-04 半導体装置
JP2019018055A Withdrawn JP2019079073A (ja) 2007-07-06 2019-02-04 液晶表示装置

Family Applications After (3)

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JP2014003826A Withdrawn JP2014115668A (ja) 2007-07-06 2014-01-13 半導体装置
JP2016074906A Withdrawn JP2016170417A (ja) 2007-07-06 2016-04-04 半導体装置
JP2019018055A Withdrawn JP2019079073A (ja) 2007-07-06 2019-02-04 液晶表示装置

Country Status (4)

Country Link
US (2) US7998800B2 (enExample)
JP (4) JP2009038357A (enExample)
CN (1) CN101339905B (enExample)
TW (1) TWI479566B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010239128A (ja) * 2009-03-10 2010-10-21 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法
US8492757B2 (en) 2009-03-06 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013190820A (ja) * 2008-03-31 2013-09-26 Semiconductor Energy Lab Co Ltd 表示装置
JP2024016108A (ja) * 2009-09-16 2024-02-06 株式会社半導体エネルギー研究所 表示装置
JP2024059882A (ja) * 2009-02-27 2024-05-01 株式会社半導体エネルギー研究所 半導体装置

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US6825488B2 (en) * 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9176353B2 (en) 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2009049384A (ja) 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd 発光装置
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR101484297B1 (ko) * 2007-08-31 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 제작방법
JP5395384B2 (ja) * 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US8227278B2 (en) * 2008-09-05 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Methods for manufacturing thin film transistor and display device
TWI535023B (zh) 2009-04-16 2016-05-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
US8344378B2 (en) * 2009-06-26 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
EP2306234A3 (de) * 2009-10-02 2011-06-22 Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung e.V. Optischer Aliasfilter, Pixelsensoranordnung und digitale Aufnahmevorrichtung
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8440548B2 (en) 2010-08-06 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of microcrystalline silicon film and manufacturing method of thin film transistor
CN102655115A (zh) * 2011-03-18 2012-09-05 北京京东方光电科技有限公司 一种tft阵列基板、及其制作方法和制造设备
JP2013051370A (ja) * 2011-08-31 2013-03-14 Tokyo Electron Ltd 成膜方法及び記憶媒体
TWI584383B (zh) * 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI513002B (zh) 2012-06-05 2015-12-11 Innocom Tech Shenzhen Co Ltd 薄膜電晶體基板以及顯示器
CN103456738A (zh) * 2012-06-05 2013-12-18 群康科技(深圳)有限公司 薄膜晶体管基板以及显示器
CN102881701B (zh) * 2012-09-19 2015-01-07 北京京东方光电科技有限公司 一种tft平板x射线传感器及其制造方法
CN103094295B (zh) * 2013-01-23 2016-05-25 北京京东方光电科技有限公司 平板探测器及其制作方法、摄像装置
JP6571585B2 (ja) * 2015-06-08 2019-09-04 信越化学工業株式会社 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法
US10515905B1 (en) * 2018-06-18 2019-12-24 Raytheon Company Semiconductor device with anti-deflection layers
JP7398915B2 (ja) * 2019-10-01 2023-12-15 東京エレクトロン株式会社 基板処理方法、半導体デバイスの製造方法、及び、プラズマ処理装置

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Cited By (19)

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Publication number Priority date Publication date Assignee Title
JP2013190820A (ja) * 2008-03-31 2013-09-26 Semiconductor Energy Lab Co Ltd 表示装置
JP2024059882A (ja) * 2009-02-27 2024-05-01 株式会社半導体エネルギー研究所 半導体装置
US9496414B2 (en) 2009-03-06 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10700213B2 (en) 2009-03-06 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8916870B2 (en) 2009-03-06 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8492757B2 (en) 2009-03-06 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11715801B2 (en) 2009-03-06 2023-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9324878B2 (en) 2009-03-06 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11309430B2 (en) 2009-03-06 2022-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9991396B2 (en) 2009-03-06 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10236391B2 (en) 2009-03-06 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8872175B2 (en) 2009-03-06 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2010239128A (ja) * 2009-03-10 2010-10-21 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法
US9018109B2 (en) 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
JP2015043456A (ja) * 2009-03-10 2015-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2024016108A (ja) * 2009-09-16 2024-02-06 株式会社半導体エネルギー研究所 表示装置
JP2024020259A (ja) * 2009-09-16 2024-02-14 株式会社半導体エネルギー研究所 表示装置
JP7592823B2 (ja) 2009-09-16 2024-12-02 株式会社半導体エネルギー研究所 表示装置
JP7676092B2 (ja) 2009-09-16 2025-05-14 株式会社半導体エネルギー研究所 表示装置

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Publication number Publication date
JP2019079073A (ja) 2019-05-23
JP2014115668A (ja) 2014-06-26
CN101339905B (zh) 2012-03-28
US20110287592A1 (en) 2011-11-24
US8389343B2 (en) 2013-03-05
TW200910454A (en) 2009-03-01
CN101339905A (zh) 2009-01-07
US20090011551A1 (en) 2009-01-08
TWI479566B (zh) 2015-04-01
US7998800B2 (en) 2011-08-16
JP2016170417A (ja) 2016-09-23

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