JP2009032794A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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JP2009032794A
JP2009032794A JP2007193396A JP2007193396A JP2009032794A JP 2009032794 A JP2009032794 A JP 2009032794A JP 2007193396 A JP2007193396 A JP 2007193396A JP 2007193396 A JP2007193396 A JP 2007193396A JP 2009032794 A JP2009032794 A JP 2009032794A
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layer
connection hole
insulating layer
semiconductor
insulating
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JP2009032794A5 (enExample
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Shinya Sasagawa
慎也 笹川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007193396A 2007-07-25 2007-07-25 半導体装置及びその作製方法 Pending JP2009032794A (ja)

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011058913A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011058866A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011155094A (ja) * 2010-01-27 2011-08-11 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
JP2011211187A (ja) * 2010-03-12 2011-10-20 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
JP2014053375A (ja) * 2012-09-05 2014-03-20 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
WO2014061762A1 (en) * 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014099430A (ja) * 2012-10-17 2014-05-29 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
JP2017212448A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 ラップアラウンド接点集積方式
KR20200012749A (ko) * 2018-07-26 2020-02-05 도쿄엘렉트론가부시키가이샤 에칭 방법
JP2021033073A (ja) * 2019-08-26 2021-03-01 セイコーエプソン株式会社 電気光学装置、および電子機器
CN113130506A (zh) * 2020-01-15 2021-07-16 爱思开海力士有限公司 半导体存储器装置及半导体存储器装置的制造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188959A (ja) * 1987-01-30 1988-08-04 Nec Corp 半導体装置およびその製造方法
JPH02231742A (ja) * 1989-03-03 1990-09-13 Nec Corp 半導体装置
JPH02308552A (ja) * 1989-05-09 1990-12-21 Motorola Inc 半導体集積回路用コンタクト構造及びその形成方法
JPH03280449A (ja) * 1990-03-28 1991-12-11 Nec Corp 半導体装置の製造方法
JPH04503892A (ja) * 1989-12-02 1992-07-09 エルエスアイ　ロジック　ユアラプ　パブリック　リミティド　カンパニー 孔のめっき方法およびこれによる製品
JPH0945768A (ja) * 1995-07-28 1997-02-14 Nec Corp 半導体装置の製造方法
JPH09167795A (ja) * 1995-12-14 1997-06-24 Nec Corp 半導体装置およびその製造方法
JPH10270555A (ja) * 1997-03-27 1998-10-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2006222208A (ja) * 2005-02-09 2006-08-24 Renesas Technology Corp 半導体装置の製造方法
JP2007180493A (ja) * 2005-11-30 2007-07-12 Elpida Memory Inc 半導体装置の製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188959A (ja) * 1987-01-30 1988-08-04 Nec Corp 半導体装置およびその製造方法
JPH02231742A (ja) * 1989-03-03 1990-09-13 Nec Corp 半導体装置
JPH02308552A (ja) * 1989-05-09 1990-12-21 Motorola Inc 半導体集積回路用コンタクト構造及びその形成方法
JPH04503892A (ja) * 1989-12-02 1992-07-09 エルエスアイ　ロジック　ユアラプ　パブリック　リミティド　カンパニー 孔のめっき方法およびこれによる製品
JPH03280449A (ja) * 1990-03-28 1991-12-11 Nec Corp 半導体装置の製造方法
JPH0945768A (ja) * 1995-07-28 1997-02-14 Nec Corp 半導体装置の製造方法
JPH09167795A (ja) * 1995-12-14 1997-06-24 Nec Corp 半導体装置およびその製造方法
JPH10270555A (ja) * 1997-03-27 1998-10-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2006222208A (ja) * 2005-02-09 2006-08-24 Renesas Technology Corp 半導体装置の製造方法
JP2007180493A (ja) * 2005-11-30 2007-07-12 Elpida Memory Inc 半導体装置の製造方法

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11456385B2 (en) 2009-11-13 2022-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011058866A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10056494B2 (en) 2009-11-13 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10516055B2 (en) 2009-11-13 2019-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8389417B2 (en) 2009-11-13 2013-03-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8410002B2 (en) 2009-11-13 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10944010B2 (en) 2009-11-13 2021-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11955557B2 (en) 2009-11-13 2024-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8742544B2 (en) 2009-11-13 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011058913A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9219162B2 (en) 2009-11-13 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8779479B2 (en) 2009-11-13 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9257449B2 (en) 2009-11-13 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011155094A (ja) * 2010-01-27 2011-08-11 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
US9917109B2 (en) 2010-03-12 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011211187A (ja) * 2010-03-12 2011-10-20 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
JP2014053375A (ja) * 2012-09-05 2014-03-20 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US9331071B2 (en) 2012-09-05 2016-05-03 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US9680031B2 (en) 2012-09-05 2017-06-13 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
CN107256846A (zh) * 2012-09-05 2017-10-17 瑞萨电子株式会社 半导体装置及其制造方法
JP2014099430A (ja) * 2012-10-17 2014-05-29 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
US9306079B2 (en) 2012-10-17 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014061762A1 (en) * 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014112657A (ja) * 2012-10-17 2014-06-19 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
US9647095B2 (en) 2012-10-17 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2017212448A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 ラップアラウンド接点集積方式
US10381448B2 (en) 2016-05-26 2019-08-13 Tokyo Electron Limited Wrap-around contact integration scheme
KR101917029B1 (ko) * 2016-05-26 2018-11-08 도쿄엘렉트론가부시키가이샤 랩-어라운드 컨택트 집적 스킴
KR20200012749A (ko) * 2018-07-26 2020-02-05 도쿄엘렉트론가부시키가이샤 에칭 방법
KR102281211B1 (ko) 2018-07-26 2021-07-22 도쿄엘렉트론가부시키가이샤 에칭 방법
JP2021033073A (ja) * 2019-08-26 2021-03-01 セイコーエプソン株式会社 電気光学装置、および電子機器
CN113130506A (zh) * 2020-01-15 2021-07-16 爱思开海力士有限公司 半导体存储器装置及半导体存储器装置的制造方法
US11812615B2 (en) 2020-01-15 2023-11-07 SK Hynix Inc. Semiconductor memory device and manufacturing method of the semiconductor memory device
CN113130506B (zh) * 2020-01-15 2024-05-17 爱思开海力士有限公司 半导体存储器装置及半导体存储器装置的制造方法

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