JP2009032794A5 - - Google Patents
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- Publication number
- JP2009032794A5 JP2009032794A5 JP2007193396A JP2007193396A JP2009032794A5 JP 2009032794 A5 JP2009032794 A5 JP 2009032794A5 JP 2007193396 A JP2007193396 A JP 2007193396A JP 2007193396 A JP2007193396 A JP 2007193396A JP 2009032794 A5 JP2009032794 A5 JP 2009032794A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- connection hole
- insulating layer
- metal layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims 35
- 239000004065 semiconductor Substances 0.000 claims 27
- 238000005530 etching Methods 0.000 claims 21
- 238000007772 electroless plating Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007193396A JP2009032794A (ja) | 2007-07-25 | 2007-07-25 | 半導体装置及びその作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007193396A JP2009032794A (ja) | 2007-07-25 | 2007-07-25 | 半導体装置及びその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009032794A JP2009032794A (ja) | 2009-02-12 |
| JP2009032794A5 true JP2009032794A5 (enExample) | 2010-09-02 |
Family
ID=40403028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007193396A Pending JP2009032794A (ja) | 2007-07-25 | 2007-07-25 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009032794A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102771839B1 (ko) | 2009-11-13 | 2025-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011058913A1 (en) | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5419730B2 (ja) * | 2010-01-27 | 2014-02-19 | 三菱電機株式会社 | 薄膜トランジスタ |
| CN102822978B (zh) | 2010-03-12 | 2015-07-22 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| JP5960000B2 (ja) * | 2012-09-05 | 2016-08-02 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| WO2014061762A1 (en) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6033045B2 (ja) * | 2012-10-17 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10381448B2 (en) * | 2016-05-26 | 2019-08-13 | Tokyo Electron Limited | Wrap-around contact integration scheme |
| JP7199174B2 (ja) * | 2018-07-26 | 2023-01-05 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6939857B2 (ja) * | 2019-08-26 | 2021-09-22 | セイコーエプソン株式会社 | 電気光学装置、および電子機器 |
| KR102811456B1 (ko) | 2020-01-15 | 2025-05-22 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 제조방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63188959A (ja) * | 1987-01-30 | 1988-08-04 | Nec Corp | 半導体装置およびその製造方法 |
| JPH02231742A (ja) * | 1989-03-03 | 1990-09-13 | Nec Corp | 半導体装置 |
| US4943539A (en) * | 1989-05-09 | 1990-07-24 | Motorola, Inc. | Process for making a multilayer metallization structure |
| GB8927310D0 (en) * | 1989-12-02 | 1990-01-31 | Lsi Logic Europ | Via-hole filling in semiconductor devices |
| JPH03280449A (ja) * | 1990-03-28 | 1991-12-11 | Nec Corp | 半導体装置の製造方法 |
| JP2739846B2 (ja) * | 1995-07-28 | 1998-04-15 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2739855B2 (ja) * | 1995-12-14 | 1998-04-15 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| JPH10270555A (ja) * | 1997-03-27 | 1998-10-09 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP2006222208A (ja) * | 2005-02-09 | 2006-08-24 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2007180493A (ja) * | 2005-11-30 | 2007-07-12 | Elpida Memory Inc | 半導体装置の製造方法 |
-
2007
- 2007-07-25 JP JP2007193396A patent/JP2009032794A/ja active Pending
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