JP2009032793A5 - - Google Patents

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Publication number
JP2009032793A5
JP2009032793A5 JP2007193354A JP2007193354A JP2009032793A5 JP 2009032793 A5 JP2009032793 A5 JP 2009032793A5 JP 2007193354 A JP2007193354 A JP 2007193354A JP 2007193354 A JP2007193354 A JP 2007193354A JP 2009032793 A5 JP2009032793 A5 JP 2009032793A5
Authority
JP
Japan
Prior art keywords
ion beam
rotation
straight line
support
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007193354A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009032793A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007193354A priority Critical patent/JP2009032793A/ja
Priority claimed from JP2007193354A external-priority patent/JP2009032793A/ja
Priority to KR1020080069874A priority patent/KR20090012090A/ko
Priority to TW097127578A priority patent/TW200913021A/zh
Priority to US12/180,182 priority patent/US7785994B2/en
Publication of JP2009032793A publication Critical patent/JP2009032793A/ja
Publication of JP2009032793A5 publication Critical patent/JP2009032793A5/ja
Pending legal-status Critical Current

Links

JP2007193354A 2007-07-25 2007-07-25 イオン注入方法および半導体装置の製造方法 Pending JP2009032793A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007193354A JP2009032793A (ja) 2007-07-25 2007-07-25 イオン注入方法および半導体装置の製造方法
KR1020080069874A KR20090012090A (ko) 2007-07-25 2008-07-18 이온 주입 방법 및 반도체 장치 제조 방법
TW097127578A TW200913021A (en) 2007-07-25 2008-07-21 Ion implantation method and semiconductor device manufacturing method
US12/180,182 US7785994B2 (en) 2007-07-25 2008-07-25 Ion implantation method and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007193354A JP2009032793A (ja) 2007-07-25 2007-07-25 イオン注入方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2009032793A JP2009032793A (ja) 2009-02-12
JP2009032793A5 true JP2009032793A5 (https=) 2010-02-18

Family

ID=40295779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007193354A Pending JP2009032793A (ja) 2007-07-25 2007-07-25 イオン注入方法および半導体装置の製造方法

Country Status (4)

Country Link
US (1) US7785994B2 (https=)
JP (1) JP2009032793A (https=)
KR (1) KR20090012090A (https=)
TW (1) TW200913021A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8765583B2 (en) * 2011-02-17 2014-07-01 Varian Semiconductor Equipment Associates, Inc. Angled multi-step masking for patterned implantation
US20120302049A1 (en) * 2011-05-24 2012-11-29 Nanya Technology Corporation Method for implanting wafer
US8697559B2 (en) 2011-07-07 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Use of ion beam tails to manufacture a workpiece
US9584012B2 (en) * 2015-02-14 2017-02-28 Skyworks Solutions, Inc. Quick-start high-voltage boost
US20220406774A1 (en) * 2021-06-18 2022-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Doped well for semiconductor devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456055A (ja) * 1990-06-21 1992-02-24 Shimadzu Corp イオン注入装置
US5278557A (en) * 1991-02-19 1994-01-11 Key Tronic Corporation Cursor movement control key and electronic computer keyboard for computers having a video display
US5355148A (en) * 1993-01-14 1994-10-11 Ast Research, Inc. Fingerpoint mouse
US5790102A (en) * 1996-03-28 1998-08-04 Nassimi; Shary Pressure sensitive computer mouse
US6040208A (en) * 1997-08-29 2000-03-21 Micron Technology, Inc. Angled ion implantation for selective doping
US6335534B1 (en) * 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
JP4030198B2 (ja) * 1998-08-11 2008-01-09 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2000223438A (ja) * 1999-02-03 2000-08-11 Seiko Epson Corp 半導体ウエハへのイオン注入方法
JP2002026274A (ja) * 2000-05-01 2002-01-25 Mitsubishi Electric Corp 半導体装置の製造方法
US6319762B1 (en) * 2000-06-19 2001-11-20 Tsmc-Acer Semiconductor Manufacturing Corp. Method for fabricating poly-spacers
JP2003060073A (ja) * 2001-08-10 2003-02-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2005183458A (ja) * 2003-12-16 2005-07-07 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及びその製造装置
US7642529B2 (en) * 2006-09-29 2010-01-05 Varian Semiconductor Equipment Associates, Inc. Method of determining angle misalignment in beam line ion implanters

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