KR20090012090A - 이온 주입 방법 및 반도체 장치 제조 방법 - Google Patents

이온 주입 방법 및 반도체 장치 제조 방법 Download PDF

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Publication number
KR20090012090A
KR20090012090A KR1020080069874A KR20080069874A KR20090012090A KR 20090012090 A KR20090012090 A KR 20090012090A KR 1020080069874 A KR1020080069874 A KR 1020080069874A KR 20080069874 A KR20080069874 A KR 20080069874A KR 20090012090 A KR20090012090 A KR 20090012090A
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KR
South Korea
Prior art keywords
semiconductor substrate
ion beam
straight line
center
angle
Prior art date
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KR1020080069874A
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English (en)
Korean (ko)
Inventor
히데키 오카이
Original Assignee
파나소닉 주식회사
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Application filed by 파나소닉 주식회사 filed Critical 파나소닉 주식회사
Publication of KR20090012090A publication Critical patent/KR20090012090A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20207—Tilt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
KR1020080069874A 2007-07-25 2008-07-18 이온 주입 방법 및 반도체 장치 제조 방법 Withdrawn KR20090012090A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00193354 2007-07-25
JP2007193354A JP2009032793A (ja) 2007-07-25 2007-07-25 イオン注入方法および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20090012090A true KR20090012090A (ko) 2009-02-02

Family

ID=40295779

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080069874A Withdrawn KR20090012090A (ko) 2007-07-25 2008-07-18 이온 주입 방법 및 반도체 장치 제조 방법

Country Status (4)

Country Link
US (1) US7785994B2 (https=)
JP (1) JP2009032793A (https=)
KR (1) KR20090012090A (https=)
TW (1) TW200913021A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8765583B2 (en) * 2011-02-17 2014-07-01 Varian Semiconductor Equipment Associates, Inc. Angled multi-step masking for patterned implantation
US20120302049A1 (en) * 2011-05-24 2012-11-29 Nanya Technology Corporation Method for implanting wafer
US8697559B2 (en) 2011-07-07 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Use of ion beam tails to manufacture a workpiece
US9584012B2 (en) * 2015-02-14 2017-02-28 Skyworks Solutions, Inc. Quick-start high-voltage boost
US20220406774A1 (en) * 2021-06-18 2022-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Doped well for semiconductor devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456055A (ja) * 1990-06-21 1992-02-24 Shimadzu Corp イオン注入装置
US5278557A (en) * 1991-02-19 1994-01-11 Key Tronic Corporation Cursor movement control key and electronic computer keyboard for computers having a video display
US5355148A (en) * 1993-01-14 1994-10-11 Ast Research, Inc. Fingerpoint mouse
US5790102A (en) * 1996-03-28 1998-08-04 Nassimi; Shary Pressure sensitive computer mouse
US6040208A (en) * 1997-08-29 2000-03-21 Micron Technology, Inc. Angled ion implantation for selective doping
US6335534B1 (en) * 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
JP4030198B2 (ja) * 1998-08-11 2008-01-09 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2000223438A (ja) * 1999-02-03 2000-08-11 Seiko Epson Corp 半導体ウエハへのイオン注入方法
JP2002026274A (ja) * 2000-05-01 2002-01-25 Mitsubishi Electric Corp 半導体装置の製造方法
US6319762B1 (en) * 2000-06-19 2001-11-20 Tsmc-Acer Semiconductor Manufacturing Corp. Method for fabricating poly-spacers
JP2003060073A (ja) * 2001-08-10 2003-02-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2005183458A (ja) * 2003-12-16 2005-07-07 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及びその製造装置
US7642529B2 (en) * 2006-09-29 2010-01-05 Varian Semiconductor Equipment Associates, Inc. Method of determining angle misalignment in beam line ion implanters

Also Published As

Publication number Publication date
TW200913021A (en) 2009-03-16
US20090029535A1 (en) 2009-01-29
US7785994B2 (en) 2010-08-31
JP2009032793A (ja) 2009-02-12

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