JP2009026751A - パターン形成方法、発光装置の作製方法および発光装置 - Google Patents

パターン形成方法、発光装置の作製方法および発光装置 Download PDF

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Publication number
JP2009026751A
JP2009026751A JP2008159058A JP2008159058A JP2009026751A JP 2009026751 A JP2009026751 A JP 2009026751A JP 2008159058 A JP2008159058 A JP 2008159058A JP 2008159058 A JP2008159058 A JP 2008159058A JP 2009026751 A JP2009026751 A JP 2009026751A
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Prior art keywords
conductive film
light
photocatalytic conductive
film
photocatalytic
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JP2008159058A
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English (en)
Japanese (ja)
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JP2009026751A5 (OSRAM
Inventor
Itsuki Fujii
厳 藤井
Erika Takahashi
絵里香 高橋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008159058A priority Critical patent/JP2009026751A/ja
Publication of JP2009026751A publication Critical patent/JP2009026751A/ja
Publication of JP2009026751A5 publication Critical patent/JP2009026751A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008159058A 2007-06-19 2008-06-18 パターン形成方法、発光装置の作製方法および発光装置 Withdrawn JP2009026751A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008159058A JP2009026751A (ja) 2007-06-19 2008-06-18 パターン形成方法、発光装置の作製方法および発光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007160895 2007-06-19
JP2008159058A JP2009026751A (ja) 2007-06-19 2008-06-18 パターン形成方法、発光装置の作製方法および発光装置

Publications (2)

Publication Number Publication Date
JP2009026751A true JP2009026751A (ja) 2009-02-05
JP2009026751A5 JP2009026751A5 (OSRAM) 2011-06-02

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JP2008159058A Withdrawn JP2009026751A (ja) 2007-06-19 2008-06-18 パターン形成方法、発光装置の作製方法および発光装置

Country Status (3)

Country Link
US (2) US8017422B2 (OSRAM)
JP (1) JP2009026751A (OSRAM)
KR (2) KR101451370B1 (OSRAM)

Cited By (6)

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JP2013206629A (ja) * 2012-03-27 2013-10-07 Toppan Printing Co Ltd 有機エレクトロルミネッセンス素子及びその製造方法
JP2014175502A (ja) * 2013-03-08 2014-09-22 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタ素子の製造方法及び塗布型半導体層のパターニング方法
JP2016046141A (ja) * 2014-08-25 2016-04-04 パイオニア株式会社 発光装置
JP2016046142A (ja) * 2014-08-25 2016-04-04 パイオニア株式会社 発光装置
JP2016192569A (ja) * 2010-09-10 2016-11-10 株式会社半導体エネルギー研究所 半導体装置
JP2020031070A (ja) * 2019-12-02 2020-02-27 パイオニア株式会社 発光装置

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US8174021B2 (en) * 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
TWI489628B (zh) * 2009-04-02 2015-06-21 Semiconductor Energy Lab 半導體裝置和其製造方法
KR101213708B1 (ko) * 2009-06-03 2012-12-18 엘지디스플레이 주식회사 어레이 기판 및 이의 제조방법
KR102775255B1 (ko) 2009-09-04 2025-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR101084278B1 (ko) * 2009-11-05 2011-11-16 삼성모바일디스플레이주식회사 표시장치 및 표시장치의 제조방법
KR101119046B1 (ko) * 2010-01-08 2012-03-02 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
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CN101894858B (zh) * 2010-03-09 2011-12-21 电子科技大学 一种有源驱动有机电致发光器件及其制备方法
CN102117840B (zh) * 2010-12-15 2012-04-25 杭州杭鑫电子工业有限公司 一种多重金属扩散快恢复二极管及其制备方法
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TWI441940B (zh) * 2011-06-09 2014-06-21 Shih Hua Technology Ltd 圖案化導電元件的製備方法
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KR101485935B1 (ko) * 2012-11-15 2015-01-26 스미도모쥬기가이고교 가부시키가이샤 태양전지의 제조방법, 및 태양전지
KR102113600B1 (ko) * 2012-12-07 2020-05-21 엘지디스플레이 주식회사 유기 발광 다이오드 표시 장치 및 이의 제조 방법
US9012259B2 (en) 2013-01-17 2015-04-21 Stmicroelectronics S.R.L. Thin film transistors formed by organic semiconductors using a hybrid patterning regime
JP6564559B2 (ja) 2013-05-10 2019-08-21 株式会社半導体エネルギー研究所 表示パネル及び電子機器
US10910350B2 (en) * 2014-05-24 2021-02-02 Hiphoton Co., Ltd. Structure of a semiconductor array
US10743413B2 (en) * 2018-02-07 2020-08-11 Shenzhen China Star Optoelectronics Technology Co., Ltd. Flexible substrate and method for manufacturing same
US11985881B2 (en) 2018-06-29 2024-05-14 Semiconductor Energy Laboratory Co., Ltd. Display panel, display device, input/output device, data processing device
CN111180583A (zh) * 2019-10-15 2020-05-19 北京元芯碳基集成电路研究院 晶体管及其制造方法
US11819824B2 (en) * 2020-08-07 2023-11-21 Pure-Light Technologies, Inc. Surface coatings for self-decontamination
US11906157B2 (en) 2020-08-07 2024-02-20 Pure-Light Te chnologies, Inc. Photocatalyst formulations and coatings
US11964739B2 (en) 2020-08-07 2024-04-23 Roger K. Young Coatings that reduce or prevent barnacle attachment to a marine structure
US12439650B2 (en) * 2021-01-15 2025-10-07 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS fabrication methods for back-gate transistor
CN115528063B (zh) * 2021-06-24 2025-06-27 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置

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JP2016192569A (ja) * 2010-09-10 2016-11-10 株式会社半導体エネルギー研究所 半導体装置
US11189642B2 (en) 2010-09-10 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and light-emitting device
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JP2014175502A (ja) * 2013-03-08 2014-09-22 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタ素子の製造方法及び塗布型半導体層のパターニング方法
JP2016046141A (ja) * 2014-08-25 2016-04-04 パイオニア株式会社 発光装置
JP2016046142A (ja) * 2014-08-25 2016-04-04 パイオニア株式会社 発光装置
JP2020031070A (ja) * 2019-12-02 2020-02-27 パイオニア株式会社 発光装置
JP2021170562A (ja) * 2019-12-02 2021-10-28 パイオニア株式会社 発光装置
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Also Published As

Publication number Publication date
US8017422B2 (en) 2011-09-13
KR101451370B1 (ko) 2014-10-15
US20090008667A1 (en) 2009-01-08
KR20080112110A (ko) 2008-12-24
US9620714B2 (en) 2017-04-11
US20110303911A1 (en) 2011-12-15
KR20130049785A (ko) 2013-05-14

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