JP2009016461A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2009016461A JP2009016461A JP2007174660A JP2007174660A JP2009016461A JP 2009016461 A JP2009016461 A JP 2009016461A JP 2007174660 A JP2007174660 A JP 2007174660A JP 2007174660 A JP2007174660 A JP 2007174660A JP 2009016461 A JP2009016461 A JP 2009016461A
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Abstract
【解決手段】本発明は、樹脂部12により封止された第1半導体チップ10と、第1半導体チップ10周囲の樹脂部12に設けられ、樹脂部12の下面から露出する第1金属部14と、第1金属部14上の樹脂部12に設けられ、樹脂部12の上面から露出する第2金属部16と、第1半導体チップ10と第1金属部14および第2金属部16とを接続する第1ワイヤ18と、を具備し、第1ワイヤ18は第1金属部14と第2金属部16とに挟まれるように接続されている半導体装置である。
【選択図】図1
Description
12 樹脂部
14 第1金属部
16 第2金属部
18 第1ワイヤ
20 第1導電部
22 凹部
24 第1支持体
25 第1フィルム膜
26 第1貫通孔
27 第2フィルム膜
29 第2貫通孔
30 第2支持体
31 上部半導体装置
32 第2導電部
33 下部半導体装置
34 第2半導体チップ
35 半田
36 第2ワイヤ
Claims (15)
- 樹脂部により封止された第1半導体チップと、
前記第1半導体チップ周囲の前記樹脂部に設けられ、前記樹脂部の下面から露出する第1金属部と、
前記第1金属部上の前記樹脂部に設けられ、前記樹脂部の上面から露出する第2金属部と、
前記第1半導体チップと前記第1金属部および前記第2金属部とを接続する第1ワイヤと、を具備し、
前記第1ワイヤは前記第1金属部と前記第2金属部とに挟まれるように接続されていることを特徴とする半導体装置。 - 前記第1金属部および前記第2金属部は球状であることを特徴とする請求項1記載の半導体装置。
- 前記第1半導体チップ上に設けられ、前記樹脂部で封止された第2半導体チップと、
前記第2半導体チップと前記第1金属部および前記第2金属部とを接続する第2ワイヤと、を具備し、
前記第2ワイヤは前記第1金属部と前記第2金属部とに挟まれるように接続されていることを特徴とする請求項1または2記載の半導体装置。 - 第1支持体上に複数の第1金属部を形成する工程と、
前記複数の第1金属部のうち一部の第1金属部に隣接するよう、前記第1支持体上に複数の第1半導体チップを搭載する工程と、
前記複数の第1半導体チップのうち隣接する第1半導体チップ同士を前記第1金属部越しに第1ワイヤにより接続する工程と、
第2支持体上に複数の第2金属部を形成する工程と、
前記第1ワイヤを挟むように前記複数の第1金属部と前記複数の第2金属部とをそれぞれ接続させ、前記第1支持体と前記第2支持体とを接合させる工程と、
前記第1支持体と前記第2支持体との間に樹脂を充填させて、前記複数の第1半導体チップを封止する樹脂部を形成する工程と、
前記第1支持体および前記第2支持体を前記樹脂部から引き剥がす工程と、
前記第1半導体チップが含まれるように、前記樹脂部を切断する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記複数の第1金属部を形成する工程は、前記第1支持体に設けられた複数の凹部に前記第1金属部を圧入することにより、前記複数の第1金属部を形成する工程であり、
前記複数の第2金属部を形成する工程は、前記第2支持体に設けられた複数の凹部に前記第2金属部を圧入することにより、前記複数の第2金属部を形成する工程であることを特徴とする請求項4記載の半導体装置の製造方法。 - 前記隣接する第1半導体チップ同士を第1金属部越しに第1ワイヤにより接続する工程の前に、前記複数の第1金属部の上部を平坦化させる工程を有し、
前記第1支持体と第2支持体とを接合させる工程の前に、前記複数の第2金属部の上部を平坦化させる工程を有することを特徴とする請求項4または5記載の半導体装置の製造方法。 - 前記複数の第1金属部を形成する工程は、第1フィルム膜を挟んで前記第1支持体上に前記複数の第1金属部を形成する工程であり、
前記複数の第2金属部を形成する工程は、第2フィルム膜を挟んで前記第2支持体上に前記複数の第2金属部を形成する工程であることを特徴とする請求項4から6のいずれか一項記載の半導体装置の製造方法。 - 前記第1支持体は、前記第1支持体を貫通する第1貫通孔を有し、
前記第2支持体は、前記第2支持体を貫通する第2貫通孔を有し、
前記第1支持体および第2支持体を前記樹脂部から引き剥がす工程は、前記第1貫通孔および前記第2貫通孔から気体を送り込みながら、前記第1支持体および第2支持体を前記樹脂部から引き剥がす工程であることを特徴とする請求項4から7のいずれか一項記載の半導体装置の製造方法。 - 前記複数の第1金属部を形成する工程は、第1フィルム膜を挟んで前記第1支持体上に前記複数の第1金属部を形成する工程であり
前記複数の第2金属部を形成する工程は、第2フィルム膜を挟んで前記第2支持体上に前記複数の第2金属部を形成する工程であり、
前記第1支持体は、前記第1フィルム膜の厚さより小さい直径で、前記第1支持体を貫通する第1貫通孔を有し、
前記第2支持体は、前記第2フィルム膜の厚さより小さい直径で、前記第2支持体を貫通する第2貫通孔を有し、
前記第1支持体および第2支持体を前記樹脂部から引き剥がす工程は、前記第1貫通孔および前記第2貫通孔から気体を送り込みながら、前記第1支持体および前記第2支持体を前記樹脂部から引き剥がす工程であることを特徴とする請求項4から6のいずれか一項記載の半導体装置の製造方法。 - 前記第1支持体の周辺部に第1導電部を形成する工程と、
前記第1導電部と前記第1導電部に隣接する前記第1半導体チップとを前記第1金属部越しに前記第1ワイヤにより接続させる工程と、を有することを特徴とする請求項4から9のいずれか一項記載の半導体装置の製造方法。 - 前記隣接する第1半導体チップの間に第2導電部を形成する工程を有し、
前記隣接する第1半導体チップ同士を第1金属部越しに第1ワイヤにより接続させる工程は、前記第2導電部を介して、前記隣接する第1半導体チップ同士を第1金属部越しに第1ワイヤにより接続させる工程を含むことを特徴とする請求項4から10のいずれか一項記載の半導体装置の製造方法。 - 前記第1金属部および前記第2金属部は球状であることを特徴とする請求項4から11のいずれか一項記載の半導体装置の製造方法。
- 前記複数の第1半導体チップそれぞれの上に第2半導体チップを搭載する工程と、
隣接する前記第2半導体チップ同士を前記第1金属部越しに第2ワイヤにより接続させる工程と、を有し、
前記第1支持体と第2支持体とを接合させる工程は、前記第1ワイヤおよび前記第2ワイヤを挟むように前記複数の第1金属部と前記複数の第2金属部とをそれぞれ接続させ、前記第1支持体と第2支持体とを接合させる工程であることを特徴とする請求項4から12のいずれか一項記載の半導体装置の製造方法。 - 前記第1支持体の周辺部に第1導電部を形成する工程と、
前記第1導電部と前記第1導電部に隣接する前記第2半導体チップとを前記第1金属部越しに前記第2ワイヤにより接続させる工程と、を有することを特徴とする請求項13記載の半導体装置の製造方法。 - 前記隣接する第1半導体チップの間に第2導電部を形成する工程を有し、
前記隣接する第2半導体チップ同士を第1金属部越しに第2ワイヤにより接続させる工程は、前記第2導電部を介して、前記隣接する第2半導体チップ同士を第1金属部越しに第2ワイヤにより接続させる工程を含むことを特徴とする請求項13または14記載の半導体装置の製造方法。
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