JP2009003886A - 電圧レギュレータ回路 - Google Patents
電圧レギュレータ回路 Download PDFInfo
- Publication number
- JP2009003886A JP2009003886A JP2007166684A JP2007166684A JP2009003886A JP 2009003886 A JP2009003886 A JP 2009003886A JP 2007166684 A JP2007166684 A JP 2007166684A JP 2007166684 A JP2007166684 A JP 2007166684A JP 2009003886 A JP2009003886 A JP 2009003886A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- voltage regulator
- load
- regulator circuit
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Abstract
【解決手段】駆動電圧を生成する電圧レギュレータ部10と、所定の抵抗値に切換えてダンピング抵抗の設定を行うダンピング抵抗切換部20とを有し、生成された駆動電圧が、負荷の変化に応じて抵抗値を切換えて設定されたダンピング抵抗6を介して、負荷7に印加される。
【選択図】 図1
Description
2 PMOS駆動トランジスタ
3 駆動電圧トリミング用抵抗
4 駆動電圧設定用抵抗
5、5−1〜3 相補型MOSトランジスタスイッチ
6、6−1〜3 ダンピング抵抗
7 負荷
10 電圧レギュレータ部
20 ダンピング抵抗切換部
VPP 高電位の書き込み用電源
Vref 基準電圧
Vout 出力端
LoadC 負荷
Trimming トリミング信号
TMEnable 制御信号
/TMEnable 制御信号
TMEnable1〜3 制御信号
/TMEnable1〜3 制御信号
GND グランド
R1、2 抵抗値
Rd 抵抗値
Claims (2)
- 半導体集積回路において、負荷に対して駆動電圧を印加する電圧レギュレータ回路であって、
前記駆動電圧を生成する電圧レギュレータ部と、所定の抵抗値に切換えてダンピング抵抗の設定を行うダンピング抵抗切換部とを有し、
前記生成された駆動電圧が、前記負荷の変化に応じて抵抗値を切換えて設定された前記ダンピング抵抗を介して、前記負荷に印加されることを特徴とする電圧レギュレータ回路。 - 前記電圧レギュレータ部は、前記負荷の変化の都度、階段状ステップ電圧である前記駆動電圧を生成し、前記階段状ステップ電圧は、前記負荷の変化に応じて抵抗値を切換えて設定された前記ダンピング抵抗を介して、前記負荷に印加されることを特徴とする請求項1に記載の電圧レギュレータ回路。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007166684A JP2009003886A (ja) | 2007-06-25 | 2007-06-25 | 電圧レギュレータ回路 |
KR1020080030420A KR101411977B1 (ko) | 2007-06-25 | 2008-04-01 | 전압 레귤레이터, 그것을 포함한 플래시 메모리 장치 및그것을 포함한 메모리 시스템 |
US12/144,769 US8076911B2 (en) | 2007-06-25 | 2008-06-24 | Flash memory and related voltage regulator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007166684A JP2009003886A (ja) | 2007-06-25 | 2007-06-25 | 電圧レギュレータ回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009003886A true JP2009003886A (ja) | 2009-01-08 |
Family
ID=40159602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007166684A Pending JP2009003886A (ja) | 2007-06-25 | 2007-06-25 | 電圧レギュレータ回路 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8076911B2 (ja) |
JP (1) | JP2009003886A (ja) |
KR (1) | KR101411977B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010250650A (ja) * | 2009-04-17 | 2010-11-04 | Seiko Epson Corp | 定電圧供給装置 |
US9158318B2 (en) | 2012-08-29 | 2015-10-13 | Kabushiki Kaisha Toshiba | Power supply apparatus which suprresses output voltage variation |
US9875963B2 (en) | 2014-12-19 | 2018-01-23 | Toshiba Memory Corporation | Semiconductor device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10320500B2 (en) * | 2007-09-18 | 2019-06-11 | Qualcomm Incorporated | Method and apparatus to enable fast channel switching with limited DVB receiver memory |
US8520441B2 (en) | 2010-11-16 | 2013-08-27 | Sandisk Technologies Inc. | Word line kicking when sensing non-volatile storage |
KR101500071B1 (ko) * | 2013-04-16 | 2015-03-09 | 한양대학교 산학협력단 | 부궤환 경로를 가지는 전압 레귤레이터 |
KR102029490B1 (ko) * | 2014-09-01 | 2019-10-07 | 삼성전기주식회사 | 로우 드롭 출력 타입의 전압 레귤레이터 및 이를 갖는 고주파 스위치 제어 장치 |
CN106954296A (zh) * | 2016-09-23 | 2017-07-14 | 上海占空比电子科技有限公司 | 去频闪线性led驱动电路 |
KR20180042645A (ko) * | 2016-10-18 | 2018-04-26 | 에스케이하이닉스 주식회사 | 전압 레귤레이터 및 이를 포함하는 저항성 메모리 장치 |
CN112327992A (zh) * | 2020-11-20 | 2021-02-05 | 唯捷创芯(天津)电子技术股份有限公司 | 一种输出可调的电压偏置电路、芯片及通信终端 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54126484A (en) * | 1978-03-25 | 1979-10-01 | Oki Electric Ind Co Ltd | Electronically adjustable potentiometer |
JPH03158911A (ja) * | 1989-11-17 | 1991-07-08 | Seiko Instr Inc | ボルテージ・レギュレーター |
JPH05205464A (ja) * | 1992-01-13 | 1993-08-13 | Nec Corp | 半導体記憶回路 |
JPH06120805A (ja) * | 1992-10-05 | 1994-04-28 | Fujitsu Ltd | 半導体集積回路 |
JPH06120011A (ja) * | 1992-10-05 | 1994-04-28 | Fujitsu Ltd | 可変信号減衰装置 |
JPH08181583A (ja) * | 1994-12-22 | 1996-07-12 | Toshiba Corp | 集積回路 |
JPH09265786A (ja) * | 1996-03-28 | 1997-10-07 | Nec Corp | 半導体記憶装置 |
JP2002303847A (ja) * | 2001-04-09 | 2002-10-18 | Sharp Corp | 電源装置及びそれを備えた表示装置 |
JP2003150251A (ja) * | 2001-11-15 | 2003-05-23 | Sankyo Seiki Mfg Co Ltd | ダンピング抵抗切換回路 |
JP2004355713A (ja) * | 2003-05-29 | 2004-12-16 | Nippon Telegr & Teleph Corp <Ntt> | 多値メモリ回路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3267756B2 (ja) * | 1993-07-02 | 2002-03-25 | 株式会社日立製作所 | 半導体集積回路装置 |
JPH07250468A (ja) * | 1994-03-11 | 1995-09-26 | Fujitsu Ltd | Dc/dcコンバータ |
US6304111B1 (en) | 2000-05-12 | 2001-10-16 | Zilog, Inc. | CMOS switch circuit having concurrently switching complementary outputs independent from process variation |
KR100843144B1 (ko) * | 2006-12-20 | 2008-07-02 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법 |
-
2007
- 2007-06-25 JP JP2007166684A patent/JP2009003886A/ja active Pending
-
2008
- 2008-04-01 KR KR1020080030420A patent/KR101411977B1/ko active IP Right Grant
- 2008-06-24 US US12/144,769 patent/US8076911B2/en not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54126484A (en) * | 1978-03-25 | 1979-10-01 | Oki Electric Ind Co Ltd | Electronically adjustable potentiometer |
JPH03158911A (ja) * | 1989-11-17 | 1991-07-08 | Seiko Instr Inc | ボルテージ・レギュレーター |
JPH05205464A (ja) * | 1992-01-13 | 1993-08-13 | Nec Corp | 半導体記憶回路 |
JPH06120805A (ja) * | 1992-10-05 | 1994-04-28 | Fujitsu Ltd | 半導体集積回路 |
JPH06120011A (ja) * | 1992-10-05 | 1994-04-28 | Fujitsu Ltd | 可変信号減衰装置 |
JPH08181583A (ja) * | 1994-12-22 | 1996-07-12 | Toshiba Corp | 集積回路 |
JPH09265786A (ja) * | 1996-03-28 | 1997-10-07 | Nec Corp | 半導体記憶装置 |
JP2002303847A (ja) * | 2001-04-09 | 2002-10-18 | Sharp Corp | 電源装置及びそれを備えた表示装置 |
JP2003150251A (ja) * | 2001-11-15 | 2003-05-23 | Sankyo Seiki Mfg Co Ltd | ダンピング抵抗切換回路 |
JP2004355713A (ja) * | 2003-05-29 | 2004-12-16 | Nippon Telegr & Teleph Corp <Ntt> | 多値メモリ回路 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010250650A (ja) * | 2009-04-17 | 2010-11-04 | Seiko Epson Corp | 定電圧供給装置 |
US9158318B2 (en) | 2012-08-29 | 2015-10-13 | Kabushiki Kaisha Toshiba | Power supply apparatus which suprresses output voltage variation |
US9875963B2 (en) | 2014-12-19 | 2018-01-23 | Toshiba Memory Corporation | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US20090001950A1 (en) | 2009-01-01 |
KR101411977B1 (ko) | 2014-06-26 |
US8076911B2 (en) | 2011-12-13 |
KR20080114489A (ko) | 2008-12-31 |
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