JP2009002931A - 計測ツールのキャリブレーションに使用する基板を形成する方法、キャリブレーション基板および計測ツールをキャリブレーションする方法 - Google Patents

計測ツールのキャリブレーションに使用する基板を形成する方法、キャリブレーション基板および計測ツールをキャリブレーションする方法 Download PDF

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Publication number
JP2009002931A
JP2009002931A JP2008077493A JP2008077493A JP2009002931A JP 2009002931 A JP2009002931 A JP 2009002931A JP 2008077493 A JP2008077493 A JP 2008077493A JP 2008077493 A JP2008077493 A JP 2008077493A JP 2009002931 A JP2009002931 A JP 2009002931A
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Japan
Prior art keywords
pattern
calibration
radiation
substrate
elongated
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Pending
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JP2008077493A
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Japanese (ja)
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JP2009002931A5 (enExample
Inventor
Hugo Augustinus Joseph Cramer
クラメル，フーゴ，アウグスティヌス，ヨセフ
Antoine Gaston Marie Kiers
キールス，アントイネ，ガストン，マリー
Gerardus Maria Johannes Wijnand Janssen
ヤンセン，ヘラルドゥス，マリア，ヨハネス，ウィナンド
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ASML Netherlands BV
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ASML Netherlands BV
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Publication of JP2009002931A publication Critical patent/JP2009002931A/ja
Publication of JP2009002931A5 publication Critical patent/JP2009002931A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2008077493A 2007-03-27 2008-03-25 計測ツールのキャリブレーションに使用する基板を形成する方法、キャリブレーション基板および計測ツールをキャリブレーションする方法 Pending JP2009002931A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/727,648 US7605907B2 (en) 2007-03-27 2007-03-27 Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method

Publications (2)

Publication Number Publication Date
JP2009002931A true JP2009002931A (ja) 2009-01-08
JP2009002931A5 JP2009002931A5 (enExample) 2011-04-14

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JP2008077493A Pending JP2009002931A (ja) 2007-03-27 2008-03-25 計測ツールのキャリブレーションに使用する基板を形成する方法、キャリブレーション基板および計測ツールをキャリブレーションする方法

Country Status (5)

Country Link
US (1) US7605907B2 (enExample)
JP (1) JP2009002931A (enExample)
KR (2) KR20080087734A (enExample)
CN (1) CN101286013B (enExample)
TW (1) TWI389137B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017524973A (ja) * 2014-07-16 2017-08-31 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法及び装置
JP2018165838A (ja) * 2010-09-28 2018-10-25 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための投影露光ツール及びマイクロリソグラフィ結像の方法
JP2019507375A (ja) * 2016-02-23 2019-03-14 エーエスエムエル ネザーランズ ビー．ブイ． パターン形成プロセスを制御する方法、リソグラフィ装置、メトロロジ装置リソグラフィックセル、および関連するコンピュータプログラム
KR20230093880A (ko) * 2021-12-20 2023-06-27 주식회사 휴비츠 광간섭 단층 촬영 장치의 캘리브레이션 방법

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JP4968335B2 (ja) * 2007-06-11 2012-07-04 株式会社ニコン 計測部材、センサ、計測方法、露光装置、露光方法、及びデバイス製造方法
NL2005412A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Calibration method and lithographic apparatus using such a calibration method.
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
JP5832345B2 (ja) * 2012-03-22 2015-12-16 株式会社ニューフレアテクノロジー 検査装置および検査方法
CN103454860B (zh) * 2012-05-30 2015-11-25 中芯国际集成电路制造(上海)有限公司 曝光的方法
NL2011683A (en) 2012-12-13 2014-06-16 Asml Netherlands Bv Method of calibrating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product.
CN104570589B (zh) * 2013-10-12 2018-08-07 北大方正集团有限公司 掩模板及利用掩模板进行光刻和测量步进精度的方法
CN104635418B (zh) * 2013-11-07 2018-01-02 北大方正集团有限公司 一种掩模版及一种测量光刻机的版旋转偏差的方法
CN104810302B (zh) * 2014-01-23 2018-12-25 北大方正集团有限公司 一种监控晶圆的使用方法
CN106597810B (zh) * 2015-10-14 2019-05-21 华邦电子股份有限公司 晶圆图案化制程
CN109541898B (zh) * 2017-09-21 2020-05-01 上海微电子装备（集团）股份有限公司 一种平面光栅尺定位误差校准方法
CN110034097B (zh) * 2018-01-12 2021-02-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
WO2021224009A1 (en) 2020-05-07 2021-11-11 Asml Netherlands B.V. A substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
CN117524962B (zh) * 2024-01-05 2024-04-16 苏州海通机器人系统有限公司 一种晶圆校准装置及校准方法
US20250314974A1 (en) * 2024-04-08 2025-10-09 Onto Innovation Inc. Front-to-back overlay (ftbo) standard

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Publication number Priority date Publication date Assignee Title
JP2018165838A (ja) * 2010-09-28 2018-10-25 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための投影露光ツール及びマイクロリソグラフィ結像の方法
JP2017524973A (ja) * 2014-07-16 2017-08-31 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法及び装置
JP2019507375A (ja) * 2016-02-23 2019-03-14 エーエスエムエル ネザーランズ ビー．ブイ． パターン形成プロセスを制御する方法、リソグラフィ装置、メトロロジ装置リソグラフィックセル、および関連するコンピュータプログラム
KR20230093880A (ko) * 2021-12-20 2023-06-27 주식회사 휴비츠 광간섭 단층 촬영 장치의 캘리브레이션 방법
KR102625950B1 (ko) * 2021-12-20 2024-01-17 주식회사 휴비츠 광간섭 단층 촬영 장치의 캘리브레이션 방법

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Publication number Publication date
KR101037411B1 (ko) 2011-05-30
CN101286013A (zh) 2008-10-15
CN101286013B (zh) 2011-04-20
US20080239277A1 (en) 2008-10-02
KR20100006553A (ko) 2010-01-19
KR20080087734A (ko) 2008-10-01
TW200847186A (en) 2008-12-01
US7605907B2 (en) 2009-10-20
TWI389137B (zh) 2013-03-11

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