KR20080087734A - 메트롤로지 툴을 캘리브레이션하는데 사용하기 위한 기판을형성하는 방법, 캘리브레이션 기판 및 메트롤로지 툴캘리브레이션 방법 - Google Patents

메트롤로지 툴을 캘리브레이션하는데 사용하기 위한 기판을형성하는 방법, 캘리브레이션 기판 및 메트롤로지 툴캘리브레이션 방법 Download PDF

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Publication number
KR20080087734A
KR20080087734A KR1020080027844A KR20080027844A KR20080087734A KR 20080087734 A KR20080087734 A KR 20080087734A KR 1020080027844 A KR1020080027844 A KR 1020080027844A KR 20080027844 A KR20080027844 A KR 20080027844A KR 20080087734 A KR20080087734 A KR 20080087734A
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KR
South Korea
Prior art keywords
calibration
radiation
pattern
substrate
patterned
Prior art date
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Ceased
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KR1020080027844A
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English (en)
Korean (ko)
Inventor
휴고 아우구스티누스 요제프 크라머
안토이네 가스톤 마리에 키에르스
게라르두스 마리아 요한네스 비예난드 얀센
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20080087734A publication Critical patent/KR20080087734A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020080027844A 2007-03-27 2008-03-26 메트롤로지 툴을 캘리브레이션하는데 사용하기 위한 기판을형성하는 방법, 캘리브레이션 기판 및 메트롤로지 툴캘리브레이션 방법 Ceased KR20080087734A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/727,648 US7605907B2 (en) 2007-03-27 2007-03-27 Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method
US11/727,648 2007-03-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020090114761A Division KR101037411B1 (ko) 2007-03-27 2009-11-25 메트롤로지 툴을 캘리브레이션하는데 사용하기 위한 기판을 형성하는 방법, 캘리브레이션 기판 및 메트롤로지 툴 캘리브레이션 방법

Publications (1)

Publication Number Publication Date
KR20080087734A true KR20080087734A (ko) 2008-10-01

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KR1020080027844A Ceased KR20080087734A (ko) 2007-03-27 2008-03-26 메트롤로지 툴을 캘리브레이션하는데 사용하기 위한 기판을형성하는 방법, 캘리브레이션 기판 및 메트롤로지 툴캘리브레이션 방법
KR1020090114761A Expired - Fee Related KR101037411B1 (ko) 2007-03-27 2009-11-25 메트롤로지 툴을 캘리브레이션하는데 사용하기 위한 기판을 형성하는 방법, 캘리브레이션 기판 및 메트롤로지 툴 캘리브레이션 방법

Family Applications After (1)

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KR1020090114761A Expired - Fee Related KR101037411B1 (ko) 2007-03-27 2009-11-25 메트롤로지 툴을 캘리브레이션하는데 사용하기 위한 기판을 형성하는 방법, 캘리브레이션 기판 및 메트롤로지 툴 캘리브레이션 방법

Country Status (5)

Country Link
US (1) US7605907B2 (enExample)
JP (1) JP2009002931A (enExample)
KR (2) KR20080087734A (enExample)
CN (1) CN101286013B (enExample)
TW (1) TWI389137B (enExample)

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JP5832345B2 (ja) * 2012-03-22 2015-12-16 株式会社ニューフレアテクノロジー 検査装置および検査方法
CN103454860B (zh) * 2012-05-30 2015-11-25 中芯国际集成电路制造(上海)有限公司 曝光的方法
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CN104570589B (zh) * 2013-10-12 2018-08-07 北大方正集团有限公司 掩模板及利用掩模板进行光刻和测量步进精度的方法
CN104635418B (zh) * 2013-11-07 2018-01-02 北大方正集团有限公司 一种掩模版及一种测量光刻机的版旋转偏差的方法
CN104810302B (zh) * 2014-01-23 2018-12-25 北大方正集团有限公司 一种监控晶圆的使用方法
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CN106597810B (zh) * 2015-10-14 2019-05-21 华邦电子股份有限公司 晶圆图案化制程
WO2017144343A1 (en) * 2016-02-23 2017-08-31 Asml Netherlands B.V. Method of controlling a patterning process, lithographic apparatus, metrology apparatus lithographic cell and associated computer program
CN109541898B (zh) * 2017-09-21 2020-05-01 上海微电子装备（集团）股份有限公司 一种平面光栅尺定位误差校准方法
CN110034097B (zh) * 2018-01-12 2021-02-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN115552221B (zh) * 2020-05-07 2025-10-17 Asml荷兰有限公司 包括目标布置的衬底和相关联的至少一个图案形成装置、光刻方法和量测方法
KR102625950B1 (ko) * 2021-12-20 2024-01-17 주식회사 휴비츠 광간섭 단층 촬영 장치의 캘리브레이션 방법
CN117524962B (zh) * 2024-01-05 2024-04-16 苏州海通机器人系统有限公司 一种晶圆校准装置及校准方法
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Also Published As

Publication number Publication date
US7605907B2 (en) 2009-10-20
KR101037411B1 (ko) 2011-05-30
JP2009002931A (ja) 2009-01-08
CN101286013A (zh) 2008-10-15
US20080239277A1 (en) 2008-10-02
CN101286013B (zh) 2011-04-20
TWI389137B (zh) 2013-03-11
TW200847186A (en) 2008-12-01
KR20100006553A (ko) 2010-01-19

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