TWI389137B - 形成一用來校正度量衡工具之基底的方法、校正基底及度量衡工具校正方法 - Google Patents

形成一用來校正度量衡工具之基底的方法、校正基底及度量衡工具校正方法 Download PDF

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Publication number
TWI389137B
TWI389137B TW097110839A TW97110839A TWI389137B TW I389137 B TWI389137 B TW I389137B TW 097110839 A TW097110839 A TW 097110839A TW 97110839 A TW97110839 A TW 97110839A TW I389137 B TWI389137 B TW I389137B
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TW
Taiwan
Prior art keywords
pattern
correction
radiation
substrate
patterned
Prior art date
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TW097110839A
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English (en)
Chinese (zh)
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TW200847186A (en
Inventor
Hugo Augustinus Joseph Cramer
Antoine Gaston Marie Kiers
Gerardus Maria Johannes Wijnand Janssen
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Asml Netherlands Bv
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Publication of TW200847186A publication Critical patent/TW200847186A/zh
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Publication of TWI389137B publication Critical patent/TWI389137B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW097110839A 2007-03-27 2008-03-26 形成一用來校正度量衡工具之基底的方法、校正基底及度量衡工具校正方法 TWI389137B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/727,648 US7605907B2 (en) 2007-03-27 2007-03-27 Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method

Publications (2)

Publication Number Publication Date
TW200847186A TW200847186A (en) 2008-12-01
TWI389137B true TWI389137B (zh) 2013-03-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW097110839A TWI389137B (zh) 2007-03-27 2008-03-26 形成一用來校正度量衡工具之基底的方法、校正基底及度量衡工具校正方法

Country Status (5)

Country Link
US (1) US7605907B2 (enExample)
JP (1) JP2009002931A (enExample)
KR (2) KR20080087734A (enExample)
CN (1) CN101286013B (enExample)
TW (1) TWI389137B (enExample)

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NL2005412A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Calibration method and lithographic apparatus using such a calibration method.
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JP5832345B2 (ja) * 2012-03-22 2015-12-16 株式会社ニューフレアテクノロジー 検査装置および検査方法
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NL2011683A (en) 2012-12-13 2014-06-16 Asml Netherlands Bv Method of calibrating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product.
CN104570589B (zh) * 2013-10-12 2018-08-07 北大方正集团有限公司 掩模板及利用掩模板进行光刻和测量步进精度的方法
CN104635418B (zh) * 2013-11-07 2018-01-02 北大方正集团有限公司 一种掩模版及一种测量光刻机的版旋转偏差的方法
CN104810302B (zh) * 2014-01-23 2018-12-25 北大方正集团有限公司 一种监控晶圆的使用方法
US9989864B2 (en) 2014-07-16 2018-06-05 Asml Netherlands B.V. Lithographic method and apparatus
CN106597810B (zh) * 2015-10-14 2019-05-21 华邦电子股份有限公司 晶圆图案化制程
WO2017144343A1 (en) * 2016-02-23 2017-08-31 Asml Netherlands B.V. Method of controlling a patterning process, lithographic apparatus, metrology apparatus lithographic cell and associated computer program
CN109541898B (zh) * 2017-09-21 2020-05-01 上海微电子装备（集团）股份有限公司 一种平面光栅尺定位误差校准方法
CN110034097B (zh) * 2018-01-12 2021-02-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
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Also Published As

Publication number Publication date
KR101037411B1 (ko) 2011-05-30
CN101286013A (zh) 2008-10-15
CN101286013B (zh) 2011-04-20
US20080239277A1 (en) 2008-10-02
KR20100006553A (ko) 2010-01-19
KR20080087734A (ko) 2008-10-01
TW200847186A (en) 2008-12-01
US7605907B2 (en) 2009-10-20
JP2009002931A (ja) 2009-01-08

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