JP2008534414A - 非鉄金属材料の結晶化の為の装置及び方法 - Google Patents

非鉄金属材料の結晶化の為の装置及び方法 Download PDF

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Publication number
JP2008534414A
JP2008534414A JP2008502280A JP2008502280A JP2008534414A JP 2008534414 A JP2008534414 A JP 2008534414A JP 2008502280 A JP2008502280 A JP 2008502280A JP 2008502280 A JP2008502280 A JP 2008502280A JP 2008534414 A JP2008534414 A JP 2008534414A
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ferrous metal
cooling
metal material
container
cooling element
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Japanese (ja)
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JP2008534414A5 (enExample
Inventor
アルミン ミュラー
ミヒャエル ゴーシュ
イェンス ザイデル
ベルト ガイアー
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ドイチェ ソーラー アクチェンゲゼルシャフト
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Publication of JP2008534414A publication Critical patent/JP2008534414A/ja
Publication of JP2008534414A5 publication Critical patent/JP2008534414A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2008502280A 2005-03-23 2006-03-11 非鉄金属材料の結晶化の為の装置及び方法 Pending JP2008534414A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005013410A DE102005013410B4 (de) 2005-03-23 2005-03-23 Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen
PCT/EP2006/002258 WO2006099955A1 (de) 2005-03-23 2006-03-11 Vorrichtung und verfahren zum kristallisieren von nichteisenmetallen

Publications (2)

Publication Number Publication Date
JP2008534414A true JP2008534414A (ja) 2008-08-28
JP2008534414A5 JP2008534414A5 (enExample) 2008-12-11

Family

ID=36190440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008502280A Pending JP2008534414A (ja) 2005-03-23 2006-03-11 非鉄金属材料の結晶化の為の装置及び方法

Country Status (7)

Country Link
US (1) US7981214B2 (enExample)
EP (1) EP1866247B1 (enExample)
JP (1) JP2008534414A (enExample)
AT (1) ATE440804T1 (enExample)
DE (2) DE102005013410B4 (enExample)
NO (1) NO20075331L (enExample)
WO (1) WO2006099955A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008051492A1 (de) 2008-10-13 2010-04-15 Pva Tepla Ag Vorrichtung zum Kristallisieren von Nicht-Eisen-Metallen
DE102009039070B4 (de) 2009-08-27 2016-05-04 Solarworld Innovations Gmbh Verfahren ung Vorrichtung zur Entfernung von Verunreinigungen aus einer Schmelze
DE102009044893B4 (de) * 2009-12-14 2014-10-30 Hanwha Q.CELLS GmbH Herstellungsverfahren zur Herstellung eines Kristallkörpers aus einem Halbleitermaterial
DE102010014724B4 (de) * 2010-04-01 2012-12-06 Deutsche Solar Gmbh Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken
DE102010029741B4 (de) 2010-06-07 2013-02-28 Solarworld Innovations Gmbh Verfahren zum Herstellen von Silizium-Wafern, Silizium Wafer und Verwendung eines Silizium-Wafer als Silizium-Solarzelle
DE102010030124B4 (de) 2010-06-15 2016-07-28 Solarworld Innovations Gmbh Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken sowie nach dem Verfahren hergestellter Silizium-Block
DE102011002598B4 (de) * 2011-01-12 2016-10-06 Solarworld Innovations Gmbh Verfahren zur Herstellung eines Silizium-Ingots
DE102011002599B4 (de) 2011-01-12 2016-06-23 Solarworld Innovations Gmbh Verfahren zur Herstellung eines Silizium-Ingots und Silizium-Ingot
DE102011005503B4 (de) 2011-03-14 2018-11-15 Solarworld Industries Gmbh Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken
ITVI20110076A1 (it) * 2011-04-01 2012-10-02 Ieco Keeps On Improving S R L Macchina per la formatura di barre metalliche
DE102011082628B4 (de) 2011-09-13 2018-10-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken
DE102011086669B4 (de) 2011-11-18 2016-08-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Silizium-Blöcken sowie Silizium-Block
DE102011087759B4 (de) 2011-12-05 2018-11-08 Solarworld Industries Gmbh Verfahren zur Herstellung von Silizium-Ingots und Silizium-Ingot
DE102012203706B4 (de) 2012-02-06 2016-08-11 Solarworld Innovations Gmbh Verfahren zur Herstellung von Silizium-Ingots, Verfahren zur Herstellung von Keimvorlagen, Keimkristall und dessen Verwendung sowie Schmelztiegel
DE102012203524B4 (de) 2012-03-06 2016-10-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Silizium-Ingots
DE102012203527B4 (de) 2012-03-06 2016-10-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Silizium-Ingots
DE102012209005B4 (de) 2012-05-29 2016-11-17 Solarworld Innovations Gmbh Keimvorlage und Verfahren zur Herstellung derselben sowie Vorrichtung und Verfahren zur Herstellung eines Silizium-Ingots
US8936652B2 (en) 2012-12-20 2015-01-20 Solarworld Industries America Inc. Method for manufacturing silicon blocks
DE102013203740B4 (de) 2013-03-05 2020-06-18 Solarworld Industries Gmbh Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken
ITTO20130258A1 (it) * 2013-03-28 2014-09-29 Saet Spa Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale
EP2982780B1 (de) 2014-08-04 2019-12-11 Heraeus Quarzglas GmbH & Co. KG Verfahren zur herstellung eines siliziumblocks, zur verfahrensdurchführung geeignete kokille aus quarzglas oder quarzgut sowie verfahren für deren herstellung
CN108441939A (zh) * 2018-03-23 2018-08-24 孟静 稳态晶体生长方法
ES2940919A1 (es) * 2023-02-24 2023-05-12 Univ Madrid Politecnica Cámara de enfriamiento de lingotes metálicos y procedimiento de obtención de un lingote metálico

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3323896A1 (de) * 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum gerichteten erstarren von schmelzen
JP2000001308A (ja) * 1998-06-15 2000-01-07 Sharp Corp 多結晶シリコン鋳塊の製造方法及びその製造装置
JP2002293526A (ja) * 2001-03-29 2002-10-09 Kawasaki Steel Corp 多結晶シリコンの製造装置
JP2002308616A (ja) * 2001-04-06 2002-10-23 Kawasaki Steel Corp 多結晶シリコンの製造方法
DE10234250A1 (de) * 2002-07-27 2004-02-05 Deutsche Solar Ag Vorrichtung sowie Verfahren zur Überwachung der Kristallisation eines Mediums, insbesondere von Silizium
WO2005092791A1 (ja) * 2004-03-29 2005-10-06 Kyocera Corporation シリコン鋳造装置および多結晶シリコンインゴットの製造方法
JP2006273628A (ja) * 2005-03-28 2006-10-12 Kyocera Corp 多結晶シリコンインゴットの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040773A (en) * 1989-08-29 1991-08-20 Ribbon Technology Corporation Method and apparatus for temperature-controlled skull melting
JP3242292B2 (ja) * 1995-06-15 2001-12-25 シャープ株式会社 多結晶半導体の製造方法および製造装置
JP3885452B2 (ja) * 1999-04-30 2007-02-21 三菱マテリアル株式会社 結晶シリコンの製造方法
DE10021585C1 (de) * 2000-05-04 2002-02-28 Ald Vacuum Techn Ag Verfahren und Vorrichtung zum Einschmelzen und Erstarren von Metallen und Halbmetallen in einer Kokille
DE10035097A1 (de) * 2000-07-17 2002-02-07 Didier Werke Ag Heizvorrichtung mit Inneninduktor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3323896A1 (de) * 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum gerichteten erstarren von schmelzen
JP2000001308A (ja) * 1998-06-15 2000-01-07 Sharp Corp 多結晶シリコン鋳塊の製造方法及びその製造装置
JP2002293526A (ja) * 2001-03-29 2002-10-09 Kawasaki Steel Corp 多結晶シリコンの製造装置
JP2002308616A (ja) * 2001-04-06 2002-10-23 Kawasaki Steel Corp 多結晶シリコンの製造方法
DE10234250A1 (de) * 2002-07-27 2004-02-05 Deutsche Solar Ag Vorrichtung sowie Verfahren zur Überwachung der Kristallisation eines Mediums, insbesondere von Silizium
WO2005092791A1 (ja) * 2004-03-29 2005-10-06 Kyocera Corporation シリコン鋳造装置および多結晶シリコンインゴットの製造方法
JP2006273628A (ja) * 2005-03-28 2006-10-12 Kyocera Corp 多結晶シリコンインゴットの製造方法

Also Published As

Publication number Publication date
EP1866247A1 (de) 2007-12-19
DE102005013410A1 (de) 2006-09-28
DE102005013410B4 (de) 2008-01-31
US7981214B2 (en) 2011-07-19
NO20075331L (no) 2007-12-18
DE502006004664D1 (de) 2009-10-08
US20080264207A1 (en) 2008-10-30
EP1866247B1 (de) 2009-08-26
ATE440804T1 (de) 2009-09-15
WO2006099955A1 (de) 2006-09-28

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