JP2008518427A5 - - Google Patents
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- Publication number
- JP2008518427A5 JP2008518427A5 JP2007523580A JP2007523580A JP2008518427A5 JP 2008518427 A5 JP2008518427 A5 JP 2008518427A5 JP 2007523580 A JP2007523580 A JP 2007523580A JP 2007523580 A JP2007523580 A JP 2007523580A JP 2008518427 A5 JP2008518427 A5 JP 2008518427A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- substrate
- abrasive
- ruthenium
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 description 58
- 239000000758 substrate Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 18
- 239000000203 mixture Substances 0.000 description 15
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 14
- 229910052707 ruthenium Inorganic materials 0.000 description 14
- 239000007788 liquid Substances 0.000 description 8
- 239000007800 oxidant agent Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000002738 chelating agent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 150000002596 lactones Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910001927 ruthenium tetroxide Inorganic materials 0.000 description 3
- 239000003352 sequestering agent Substances 0.000 description 3
- 150000003573 thiols Chemical class 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- YOURVSNPCBPILN-UHFFFAOYSA-M potassium hydrogen sulfate hydroxy hydrogen sulfate Chemical compound [K+].OS([O-])(=O)=O.OOS(O)(=O)=O YOURVSNPCBPILN-UHFFFAOYSA-M 0.000 description 1
- XUXNAKZDHHEHPC-UHFFFAOYSA-M sodium bromate Chemical compound [Na+].[O-]Br(=O)=O XUXNAKZDHHEHPC-UHFFFAOYSA-M 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/901,420 US7161247B2 (en) | 2004-07-28 | 2004-07-28 | Polishing composition for noble metals |
| US10/901,420 | 2004-07-28 | ||
| PCT/US2005/023654 WO2006023105A1 (en) | 2004-07-28 | 2005-07-01 | Polishing composition for noble metals |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008127318A Division JP2009006469A (ja) | 2004-07-28 | 2008-05-14 | 貴金属のための磨き組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008518427A JP2008518427A (ja) | 2008-05-29 |
| JP2008518427A5 true JP2008518427A5 (enExample) | 2010-04-30 |
| JP4516119B2 JP4516119B2 (ja) | 2010-08-04 |
Family
ID=34973040
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007523580A Expired - Fee Related JP4516119B2 (ja) | 2004-07-28 | 2005-07-01 | 貴金属のための磨き組成物 |
| JP2008127318A Pending JP2009006469A (ja) | 2004-07-28 | 2008-05-14 | 貴金属のための磨き組成物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008127318A Pending JP2009006469A (ja) | 2004-07-28 | 2008-05-14 | 貴金属のための磨き組成物 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7161247B2 (enExample) |
| EP (2) | EP2431434B1 (enExample) |
| JP (2) | JP4516119B2 (enExample) |
| KR (1) | KR101201063B1 (enExample) |
| CN (1) | CN1993437B (enExample) |
| IL (1) | IL179941A (enExample) |
| MY (1) | MY143678A (enExample) |
| TW (1) | TWI302163B (enExample) |
| WO (1) | WO2006023105A1 (enExample) |
Families Citing this family (39)
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| JP2005088188A (ja) * | 2003-08-12 | 2005-04-07 | Fujitsu Ltd | マイクロ揺動素子およびマイクロ揺動素子駆動方法 |
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| US20070039246A1 (en) * | 2005-08-17 | 2007-02-22 | Zhendong Liu | Method for preparing polishing slurry |
| US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| CN101443890A (zh) * | 2006-05-16 | 2009-05-27 | 昭和电工株式会社 | 研磨组合物的制造方法 |
| US7368066B2 (en) * | 2006-05-31 | 2008-05-06 | Cabot Microelectronics Corporation | Gold CMP composition and method |
| US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| US7803711B2 (en) * | 2007-09-18 | 2010-09-28 | Cabot Microelectronics Corporation | Low pH barrier slurry based on titanium dioxide |
| US20090124173A1 (en) * | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
| US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| TWI360240B (en) * | 2008-08-25 | 2012-03-11 | Ind Tech Res Inst | Method for packaging a light-emitting diode |
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| CN101684392B (zh) * | 2008-09-26 | 2015-01-28 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
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| CN101955732B (zh) * | 2009-07-13 | 2016-06-15 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| JP5879269B2 (ja) * | 2009-12-23 | 2016-03-08 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | 堆積後ウエハ洗浄配合物 |
| JP5516604B2 (ja) * | 2009-12-28 | 2014-06-11 | 日立化成株式会社 | Ｃｍｐ用研磨液及びこれを用いた研磨方法 |
| KR101396232B1 (ko) * | 2010-02-05 | 2014-05-19 | 한양대학교 산학협력단 | 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법 |
| JP6196155B2 (ja) * | 2010-09-08 | 2017-09-13 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 水性研磨剤組成物、並びに電気、機械及び光学デバイス用の基板材料を研磨する方法 |
| CN102477258B (zh) * | 2010-11-26 | 2015-05-27 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| US8288283B2 (en) * | 2010-12-07 | 2012-10-16 | Texas Instruments Incorporated | Aluminum enhanced palladium CMP process |
| US20140197356A1 (en) * | 2011-12-21 | 2014-07-17 | Cabot Microelectronics Corporation | Cmp compositions and methods for suppressing polysilicon removal rates |
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| US8920667B2 (en) | 2013-01-30 | 2014-12-30 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition containing zirconia and metal oxidizer |
| US9434859B2 (en) | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
| US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
| JP2017178972A (ja) * | 2014-08-07 | 2017-10-05 | 日立化成株式会社 | Ｃｍｐ用研磨液及びこれを用いた研磨方法 |
| CN104293207B (zh) * | 2014-09-25 | 2016-03-23 | 姚雳 | 一种化学机械抛光液及其制备方法 |
| TWI611049B (zh) * | 2014-10-21 | 2018-01-11 | 卡博特微電子公司 | 腐蝕抑制劑及相關組合物及方法 |
| US9422455B2 (en) * | 2014-12-12 | 2016-08-23 | Cabot Microelectronics Corporation | CMP compositions exhibiting reduced dishing in STI wafer polishing |
| US10937691B2 (en) | 2018-09-27 | 2021-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming an abrasive slurry and methods for chemical-mechanical polishing |
| JP7380238B2 (ja) * | 2019-02-19 | 2023-11-15 | Ａｇｃ株式会社 | 研磨用組成物および研磨方法 |
| KR20200143144A (ko) | 2019-06-14 | 2020-12-23 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
| JP6874231B1 (ja) * | 2019-09-27 | 2021-05-19 | 株式会社トクヤマ | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
| CN110923778A (zh) * | 2019-11-28 | 2020-03-27 | 西安昆仑工业（集团）有限责任公司 | 一种压铸铝表面处理方法 |
| US20220277964A1 (en) * | 2021-02-26 | 2022-09-01 | International Business Machines Corporation | Chemical mechanical planarization slurries and processes for platinum group metals |
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| US6641630B1 (en) | 2002-06-06 | 2003-11-04 | Cabot Microelectronics Corp. | CMP compositions containing iodine and an iodine vapor-trapping agent |
| US6974777B2 (en) | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
| JP2004189894A (ja) * | 2002-12-11 | 2004-07-08 | Asahi Kasei Chemicals Corp | 金属用研磨組成物 |
| US20050045852A1 (en) * | 2003-08-29 | 2005-03-03 | Ameen Joseph G. | Particle-free polishing fluid for nickel-based coating planarization |
-
2004
- 2004-07-28 US US10/901,420 patent/US7161247B2/en not_active Expired - Lifetime
-
2005
- 2005-07-01 CN CN2005800255635A patent/CN1993437B/zh not_active Expired - Fee Related
- 2005-07-01 EP EP11187617.3A patent/EP2431434B1/en not_active Expired - Lifetime
- 2005-07-01 WO PCT/US2005/023654 patent/WO2006023105A1/en not_active Ceased
- 2005-07-01 KR KR1020077004725A patent/KR101201063B1/ko not_active Expired - Fee Related
- 2005-07-01 EP EP05767671.0A patent/EP1797152B1/en not_active Expired - Lifetime
- 2005-07-01 JP JP2007523580A patent/JP4516119B2/ja not_active Expired - Fee Related
- 2005-07-07 TW TW094123058A patent/TWI302163B/zh not_active IP Right Cessation
- 2005-07-26 MY MYPI20053434A patent/MY143678A/en unknown
-
2006
- 2006-12-10 IL IL179941A patent/IL179941A/en not_active IP Right Cessation
-
2008
- 2008-05-14 JP JP2008127318A patent/JP2009006469A/ja active Pending
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