MY143678A - Polishing composition for noble metals - Google Patents
Polishing composition for noble metalsInfo
- Publication number
- MY143678A MY143678A MYPI20053434A MYPI20053434A MY143678A MY 143678 A MY143678 A MY 143678A MY PI20053434 A MYPI20053434 A MY PI20053434A MY PI20053434 A MYPI20053434 A MY PI20053434A MY 143678 A MY143678 A MY 143678A
- Authority
- MY
- Malaysia
- Prior art keywords
- polishing composition
- polishing
- ruthenium
- metal
- chemically
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/901,420 US7161247B2 (en) | 2004-07-28 | 2004-07-28 | Polishing composition for noble metals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY143678A true MY143678A (en) | 2011-06-30 |
Family
ID=34973040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI20053434A MY143678A (en) | 2004-07-28 | 2005-07-26 | Polishing composition for noble metals |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7161247B2 (enExample) |
| EP (2) | EP2431434B1 (enExample) |
| JP (2) | JP4516119B2 (enExample) |
| KR (1) | KR101201063B1 (enExample) |
| CN (1) | CN1993437B (enExample) |
| IL (1) | IL179941A (enExample) |
| MY (1) | MY143678A (enExample) |
| TW (1) | TWI302163B (enExample) |
| WO (1) | WO2006023105A1 (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005088188A (ja) * | 2003-08-12 | 2005-04-07 | Fujitsu Ltd | マイクロ揺動素子およびマイクロ揺動素子駆動方法 |
| WO2006105020A1 (en) * | 2005-03-25 | 2006-10-05 | Dupont Air Products Nanomaterials Llc | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
| US20070039246A1 (en) * | 2005-08-17 | 2007-02-22 | Zhendong Liu | Method for preparing polishing slurry |
| US7803203B2 (en) * | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| US20090194504A1 (en) * | 2006-05-16 | 2009-08-06 | Showa Denko K.K. | Method for producing abrasive composition |
| US7368066B2 (en) * | 2006-05-31 | 2008-05-06 | Cabot Microelectronics Corporation | Gold CMP composition and method |
| US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| US7803711B2 (en) * | 2007-09-18 | 2010-09-28 | Cabot Microelectronics Corporation | Low pH barrier slurry based on titanium dioxide |
| US20090124173A1 (en) * | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
| US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| TWI360240B (en) * | 2008-08-25 | 2012-03-11 | Ind Tech Res Inst | Method for packaging a light-emitting diode |
| US9691622B2 (en) | 2008-09-07 | 2017-06-27 | Lam Research Corporation | Pre-fill wafer cleaning formulation |
| CN101684392B (zh) * | 2008-09-26 | 2015-01-28 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| US20100096584A1 (en) * | 2008-10-22 | 2010-04-22 | Fujimi Corporation | Polishing Composition and Polishing Method Using the Same |
| KR20110102378A (ko) * | 2008-11-26 | 2011-09-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 폴리싱을 위한 엔드 포인트 제어를 이용한 화학 물질과 연마 입자의 2 라인 혼합 방법 |
| US8684793B2 (en) * | 2009-05-08 | 2014-04-01 | Basf Se | Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization |
| CN104845532B (zh) * | 2009-06-22 | 2017-10-03 | 嘉柏微电子材料股份公司 | 化学机械抛光组合物以及用于抑制多晶硅移除速率的方法 |
| CN101955732B (zh) * | 2009-07-13 | 2016-06-15 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| WO2011078982A1 (en) * | 2009-12-23 | 2011-06-30 | Lam Research Corporation | Post deposition wafer cleaning formulation |
| CN102686693A (zh) * | 2009-12-28 | 2012-09-19 | 日立化成工业株式会社 | Cmp用研磨液及使用其的研磨方法 |
| KR101396232B1 (ko) * | 2010-02-05 | 2014-05-19 | 한양대학교 산학협력단 | 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법 |
| KR101907863B1 (ko) * | 2010-09-08 | 2018-10-15 | 바스프 에스이 | 수성 폴리싱 조성물, 및 전기적, 기계적 및 광학적 장치용 기판 재료의 화학적 기계적 폴리싱 방법 |
| CN102477258B (zh) * | 2010-11-26 | 2015-05-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| US8288283B2 (en) * | 2010-12-07 | 2012-10-16 | Texas Instruments Incorporated | Aluminum enhanced palladium CMP process |
| US20140197356A1 (en) * | 2011-12-21 | 2014-07-17 | Cabot Microelectronics Corporation | Cmp compositions and methods for suppressing polysilicon removal rates |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| US8920667B2 (en) | 2013-01-30 | 2014-12-30 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition containing zirconia and metal oxidizer |
| US9434859B2 (en) | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
| US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
| JP2017178972A (ja) * | 2014-08-07 | 2017-10-05 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
| CN104293207B (zh) * | 2014-09-25 | 2016-03-23 | 姚雳 | 一种化学机械抛光液及其制备方法 |
| US10124464B2 (en) * | 2014-10-21 | 2018-11-13 | Cabot Microelectronics Corporation | Corrosion inhibitors and related compositions and methods |
| US9422455B2 (en) * | 2014-12-12 | 2016-08-23 | Cabot Microelectronics Corporation | CMP compositions exhibiting reduced dishing in STI wafer polishing |
| US10937691B2 (en) | 2018-09-27 | 2021-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming an abrasive slurry and methods for chemical-mechanical polishing |
| JP7380238B2 (ja) * | 2019-02-19 | 2023-11-15 | Agc株式会社 | 研磨用組成物および研磨方法 |
| KR20200143144A (ko) | 2019-06-14 | 2020-12-23 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
| JP6874231B1 (ja) * | 2019-09-27 | 2021-05-19 | 株式会社トクヤマ | RuO4ガスの発生抑制剤及びRuO4ガスの発生抑制方法 |
| CN110923778A (zh) * | 2019-11-28 | 2020-03-27 | 西安昆仑工业(集团)有限责任公司 | 一种压铸铝表面处理方法 |
| US20220277964A1 (en) * | 2021-02-26 | 2022-09-01 | International Business Machines Corporation | Chemical mechanical planarization slurries and processes for platinum group metals |
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|---|---|---|---|---|
| JPS6396599A (ja) | 1986-10-14 | 1988-04-27 | 三菱重工業株式会社 | 金属ルテニウムの溶解法 |
| JPH01270512A (ja) | 1988-04-21 | 1989-10-27 | Tanaka Kikinzoku Kogyo Kk | 貴金属の溶解方法 |
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| BE1007280A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Werkwijze voor het polijsten van een oppervlak van een edelmetaal of een in hoofdzaak edelmetaal bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze en polijstmiddel geschikt voor toepassing in de werkwijze. |
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| US7097541B2 (en) * | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
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| US6776810B1 (en) | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
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| EP1495059B1 (en) | 2002-04-12 | 2006-05-24 | Dow Global Technologies Inc. | Low molecular weight copolymer of ethylene and vinyl aromatic monomer and uses thereof |
| US20030194959A1 (en) * | 2002-04-15 | 2003-10-16 | Cabot Microelectronics Corporation | Sintered polishing pad with regions of contrasting density |
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| US6641630B1 (en) * | 2002-06-06 | 2003-11-04 | Cabot Microelectronics Corp. | CMP compositions containing iodine and an iodine vapor-trapping agent |
| US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
| JP2004189894A (ja) * | 2002-12-11 | 2004-07-08 | Asahi Kasei Chemicals Corp | 金属用研磨組成物 |
| US20050045852A1 (en) * | 2003-08-29 | 2005-03-03 | Ameen Joseph G. | Particle-free polishing fluid for nickel-based coating planarization |
-
2004
- 2004-07-28 US US10/901,420 patent/US7161247B2/en not_active Expired - Lifetime
-
2005
- 2005-07-01 EP EP11187617.3A patent/EP2431434B1/en not_active Expired - Lifetime
- 2005-07-01 JP JP2007523580A patent/JP4516119B2/ja not_active Expired - Fee Related
- 2005-07-01 WO PCT/US2005/023654 patent/WO2006023105A1/en not_active Ceased
- 2005-07-01 CN CN2005800255635A patent/CN1993437B/zh not_active Expired - Fee Related
- 2005-07-01 KR KR1020077004725A patent/KR101201063B1/ko not_active Expired - Fee Related
- 2005-07-01 EP EP05767671.0A patent/EP1797152B1/en not_active Expired - Lifetime
- 2005-07-07 TW TW094123058A patent/TWI302163B/zh not_active IP Right Cessation
- 2005-07-26 MY MYPI20053434A patent/MY143678A/en unknown
-
2006
- 2006-12-10 IL IL179941A patent/IL179941A/en not_active IP Right Cessation
-
2008
- 2008-05-14 JP JP2008127318A patent/JP2009006469A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1993437A (zh) | 2007-07-04 |
| EP2431434B1 (en) | 2017-11-01 |
| EP1797152A1 (en) | 2007-06-20 |
| WO2006023105A1 (en) | 2006-03-02 |
| IL179941A (en) | 2011-04-28 |
| KR101201063B1 (ko) | 2012-11-14 |
| CN1993437B (zh) | 2013-07-31 |
| JP4516119B2 (ja) | 2010-08-04 |
| IL179941A0 (en) | 2007-05-15 |
| JP2008518427A (ja) | 2008-05-29 |
| US7161247B2 (en) | 2007-01-09 |
| US20060024967A1 (en) | 2006-02-02 |
| TWI302163B (en) | 2008-10-21 |
| JP2009006469A (ja) | 2009-01-15 |
| TW200613534A (en) | 2006-05-01 |
| EP2431434A1 (en) | 2012-03-21 |
| KR20070049185A (ko) | 2007-05-10 |
| EP1797152B1 (en) | 2015-09-16 |
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