KR101201063B1 - 귀금속용 연마 조성물 - Google Patents

귀금속용 연마 조성물 Download PDF

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Publication number
KR101201063B1
KR101201063B1 KR1020077004725A KR20077004725A KR101201063B1 KR 101201063 B1 KR101201063 B1 KR 101201063B1 KR 1020077004725 A KR1020077004725 A KR 1020077004725A KR 20077004725 A KR20077004725 A KR 20077004725A KR 101201063 B1 KR101201063 B1 KR 101201063B1
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KR
South Korea
Prior art keywords
polishing
polishing composition
group
abrasive
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020077004725A
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English (en)
Korean (ko)
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KR20070049185A (ko
Inventor
프란세스코 드 레게 테사우로
블라식 브루식
크리스토퍼 톰슨
벤자민 바이엘
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20070049185A publication Critical patent/KR20070049185A/ko
Application granted granted Critical
Publication of KR101201063B1 publication Critical patent/KR101201063B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020077004725A 2004-07-28 2005-07-01 귀금속용 연마 조성물 Expired - Fee Related KR101201063B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/901,420 US7161247B2 (en) 2004-07-28 2004-07-28 Polishing composition for noble metals
US10/901,420 2004-07-28
PCT/US2005/023654 WO2006023105A1 (en) 2004-07-28 2005-07-01 Polishing composition for noble metals

Publications (2)

Publication Number Publication Date
KR20070049185A KR20070049185A (ko) 2007-05-10
KR101201063B1 true KR101201063B1 (ko) 2012-11-14

Family

ID=34973040

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077004725A Expired - Fee Related KR101201063B1 (ko) 2004-07-28 2005-07-01 귀금속용 연마 조성물

Country Status (9)

Country Link
US (1) US7161247B2 (enExample)
EP (2) EP1797152B1 (enExample)
JP (2) JP4516119B2 (enExample)
KR (1) KR101201063B1 (enExample)
CN (1) CN1993437B (enExample)
IL (1) IL179941A (enExample)
MY (1) MY143678A (enExample)
TW (1) TWI302163B (enExample)
WO (1) WO2006023105A1 (enExample)

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US7368066B2 (en) * 2006-05-31 2008-05-06 Cabot Microelectronics Corporation Gold CMP composition and method
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US8920667B2 (en) 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
US9434859B2 (en) 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
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JP2017178972A (ja) * 2014-08-07 2017-10-05 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
CN104293207B (zh) * 2014-09-25 2016-03-23 姚雳 一种化学机械抛光液及其制备方法
CN116288366A (zh) * 2014-10-21 2023-06-23 Cmc材料股份有限公司 腐蚀抑制剂以及相关的组合物及方法
US9422455B2 (en) * 2014-12-12 2016-08-23 Cabot Microelectronics Corporation CMP compositions exhibiting reduced dishing in STI wafer polishing
US10937691B2 (en) * 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
JP7380238B2 (ja) * 2019-02-19 2023-11-15 Ａｇｃ株式会社 研磨用組成物および研磨方法
KR20200143144A (ko) 2019-06-14 2020-12-23 삼성전자주식회사 슬러리 조성물 및 이를 이용한 집적회로 소자의 제조 방법
WO2021060234A1 (ja) * 2019-09-27 2021-04-01 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
CN110923778A (zh) * 2019-11-28 2020-03-27 西安昆仑工业（集团）有限责任公司 一种压铸铝表面处理方法
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Also Published As

Publication number Publication date
IL179941A (en) 2011-04-28
KR20070049185A (ko) 2007-05-10
EP2431434A1 (en) 2012-03-21
JP2009006469A (ja) 2009-01-15
EP1797152A1 (en) 2007-06-20
WO2006023105A1 (en) 2006-03-02
CN1993437B (zh) 2013-07-31
TW200613534A (en) 2006-05-01
JP2008518427A (ja) 2008-05-29
EP2431434B1 (en) 2017-11-01
MY143678A (en) 2011-06-30
US7161247B2 (en) 2007-01-09
JP4516119B2 (ja) 2010-08-04
IL179941A0 (en) 2007-05-15
CN1993437A (zh) 2007-07-04
TWI302163B (en) 2008-10-21
US20060024967A1 (en) 2006-02-02
EP1797152B1 (en) 2015-09-16

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