CN1993437B - 用于贵金属的抛光组合物 - Google Patents

用于贵金属的抛光组合物 Download PDF

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Publication number
CN1993437B
CN1993437B CN2005800255635A CN200580025563A CN1993437B CN 1993437 B CN1993437 B CN 1993437B CN 2005800255635 A CN2005800255635 A CN 2005800255635A CN 200580025563 A CN200580025563 A CN 200580025563A CN 1993437 B CN1993437 B CN 1993437B
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CN
China
Prior art keywords
polishing
polishing composition
ruthenium
acid
abrasive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2005800255635A
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English (en)
Chinese (zh)
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CN1993437A (zh
Inventor
弗朗西斯科·德雷格西索罗
弗拉西克·布鲁西克
克里斯托弗·汤普森
本杰明·拜尔
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Cabot Corp
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Cabot Corp
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Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of CN1993437A publication Critical patent/CN1993437A/zh
Application granted granted Critical
Publication of CN1993437B publication Critical patent/CN1993437B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2005800255635A 2004-07-28 2005-07-01 用于贵金属的抛光组合物 Expired - Fee Related CN1993437B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/901,420 US7161247B2 (en) 2004-07-28 2004-07-28 Polishing composition for noble metals
US10/901,420 2004-07-28
PCT/US2005/023654 WO2006023105A1 (en) 2004-07-28 2005-07-01 Polishing composition for noble metals

Publications (2)

Publication Number Publication Date
CN1993437A CN1993437A (zh) 2007-07-04
CN1993437B true CN1993437B (zh) 2013-07-31

Family

ID=34973040

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800255635A Expired - Fee Related CN1993437B (zh) 2004-07-28 2005-07-01 用于贵金属的抛光组合物

Country Status (9)

Country Link
US (1) US7161247B2 (enExample)
EP (2) EP1797152B1 (enExample)
JP (2) JP4516119B2 (enExample)
KR (1) KR101201063B1 (enExample)
CN (1) CN1993437B (enExample)
IL (1) IL179941A (enExample)
MY (1) MY143678A (enExample)
TW (1) TWI302163B (enExample)
WO (1) WO2006023105A1 (enExample)

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CN101180379B (zh) * 2005-03-25 2013-07-24 气体产品与化学公司 用于含有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物
US20070039246A1 (en) * 2005-08-17 2007-02-22 Zhendong Liu Method for preparing polishing slurry
US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
JP5153623B2 (ja) * 2006-05-16 2013-02-27 昭和電工株式会社 研磨組成物の製造方法
US7368066B2 (en) * 2006-05-31 2008-05-06 Cabot Microelectronics Corporation Gold CMP composition and method
US8008202B2 (en) * 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
US7803711B2 (en) * 2007-09-18 2010-09-28 Cabot Microelectronics Corporation Low pH barrier slurry based on titanium dioxide
US20090124173A1 (en) * 2007-11-09 2009-05-14 Cabot Microelectronics Corporation Compositions and methods for ruthenium and tantalum barrier cmp
US7922926B2 (en) * 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
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US9691622B2 (en) 2008-09-07 2017-06-27 Lam Research Corporation Pre-fill wafer cleaning formulation
CN101684392B (zh) * 2008-09-26 2015-01-28 安集微电子（上海）有限公司 一种化学机械抛光液
US20100096584A1 (en) * 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
KR20110102378A (ko) * 2008-11-26 2011-09-16 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 폴리싱을 위한 엔드 포인트 제어를 이용한 화학 물질과 연마 입자의 2 라인 혼합 방법
WO2010128094A1 (en) * 2009-05-08 2010-11-11 Basf Se Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization
SG10201401549SA (en) * 2009-06-22 2014-06-27 Cabot Microelectronics Corp CMP Compositions And Methods For Suppressing Polysilicon Removal Rates
CN101955732B (zh) * 2009-07-13 2016-06-15 安集微电子（上海）有限公司 一种化学机械抛光液
CN102792431B (zh) * 2009-12-23 2016-04-27 朗姆研究公司 沉积后的晶片清洁配方
WO2011081109A1 (ja) * 2009-12-28 2011-07-07 日立化成工業株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
KR101396232B1 (ko) * 2010-02-05 2014-05-19 한양대학교 산학협력단 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법
WO2012032469A1 (en) * 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
CN102477258B (zh) * 2010-11-26 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液
US8288283B2 (en) * 2010-12-07 2012-10-16 Texas Instruments Incorporated Aluminum enhanced palladium CMP process
US20140197356A1 (en) * 2011-12-21 2014-07-17 Cabot Microelectronics Corporation Cmp compositions and methods for suppressing polysilicon removal rates
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
US8920667B2 (en) 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
US9434859B2 (en) 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP2017178972A (ja) * 2014-08-07 2017-10-05 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
CN104293207B (zh) * 2014-09-25 2016-03-23 姚雳 一种化学机械抛光液及其制备方法
CN116288366A (zh) * 2014-10-21 2023-06-23 Cmc材料股份有限公司 腐蚀抑制剂以及相关的组合物及方法
US9422455B2 (en) * 2014-12-12 2016-08-23 Cabot Microelectronics Corporation CMP compositions exhibiting reduced dishing in STI wafer polishing
US10937691B2 (en) * 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
JP7380238B2 (ja) * 2019-02-19 2023-11-15 Ａｇｃ株式会社 研磨用組成物および研磨方法
KR20200143144A (ko) 2019-06-14 2020-12-23 삼성전자주식회사 슬러리 조성물 및 이를 이용한 집적회로 소자의 제조 방법
WO2021060234A1 (ja) * 2019-09-27 2021-04-01 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
CN110923778A (zh) * 2019-11-28 2020-03-27 西安昆仑工业（集团）有限责任公司 一种压铸铝表面处理方法
US20220277964A1 (en) * 2021-02-26 2022-09-01 International Business Machines Corporation Chemical mechanical planarization slurries and processes for platinum group metals

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Also Published As

Publication number Publication date
IL179941A (en) 2011-04-28
KR20070049185A (ko) 2007-05-10
EP2431434A1 (en) 2012-03-21
JP2009006469A (ja) 2009-01-15
EP1797152A1 (en) 2007-06-20
WO2006023105A1 (en) 2006-03-02
TW200613534A (en) 2006-05-01
JP2008518427A (ja) 2008-05-29
EP2431434B1 (en) 2017-11-01
MY143678A (en) 2011-06-30
US7161247B2 (en) 2007-01-09
JP4516119B2 (ja) 2010-08-04
IL179941A0 (en) 2007-05-15
CN1993437A (zh) 2007-07-04
KR101201063B1 (ko) 2012-11-14
TWI302163B (en) 2008-10-21
US20060024967A1 (en) 2006-02-02
EP1797152B1 (en) 2015-09-16

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