JP2008510383A - 信号パワーレベル検出方法及び回路 - Google Patents
信号パワーレベル検出方法及び回路 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/693—Arrangements for optimizing the preamplifier in the receiver
- H04B10/6931—Automatic gain control of the preamplifier
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/697—Arrangements for reducing noise and distortion
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
- Optical Communication System (AREA)
Abstract
Description
Vout1=Z1*(Iin1−Iin2)+歪み項
Vout2=Z2*(Iin2−Iin1)+歪み項
ここで、Iin1及びIin2は、それぞれ、非反転入力端子(+)及び反転入力端子(−)の入力電流であり、Z1及びZ2は、それぞれ、トランスインピーダンス利得の線形係数である。この差動トランスインピーダンス増幅器36の出力信号Vout1、Vout2は、反転入力端子及び非反転入力端子に入力される電流の差だけに依存し、反対の出力電圧には依存しないため、出力端子間には、方向性が存在し、各出力端子は、分離されていると言える。したがって、一方の出力端子側における負荷条件の変化によって、反対側の出力端子のレベルが変化することはない。すなわち、出力信号Vout2に対するインピーダンスが時間と共に変化しても、反対側の出力端子からの出力信号Vout1の値は、変化しない。同様に、出力信号Vout1又は出力信号Vout2の一方において外部的に誘導された信号は、他方には現れない。
Claims (15)
- アノード及びカソードを有するフォトディテクタと、
少なくとも2つの入力端子及び2つの出力端子を有し、一方の入力端子が上記フォトディテクタのアノードに接続され、他方の入力端子が上記フォトディテクタのカソードに接続された増幅器と、
上記増幅器の1つの出力端子に接続された信号検出器とを備え、
上記増幅器の2つの出力端子は、互いに分離されていることを特徴とする信号パワーレベル検出回路。 - 上記フォトディテクタに接続され、該フォトディテクタをバイアスするフォトディテクタバイアスネットワークを更に備える請求項1記載の信号パワーレベル検出回路。
- 上記増幅器は、差動トランスインピーダンス増幅器であることを特徴とする請求項2記載の信号パワーレベル検出回路。
- 上記差動トランスインピーダンス増幅器のトランスインピーダンスは、トランジスタの差動対におけるフィードバックを用いて制御されることを特徴とする請求項3記載の信号パワーレベル検出回路。
- 上記差動トランスインピーダンス増幅器は、可変利得を有することを特徴とする請求項4記載の信号パワーレベル検出回路。
- 上記信号検出器は、当該信号パワーレベル検出回路から出力される元の信号の信号強度を検出することを特徴とする請求項2記載の信号パワーレベル検出回路。
- 上記増幅器は、デュアルトランスインピーダンス増幅器及び差動出力増幅器を備えることを特徴とする請求項2記載の信号パワーレベル検出回路。
- 上記信号検出器は、当該信号パワーレベル検出回路から出た元の信号の信号強度を検出することを特徴とする請求項7記載の信号パワーレベル検出回路。
- 光受信機の出力パワーレベルを検出する信号パワーレベル検出方法において、
フォトディテクタによって光信号を検出し、第1及び第2の電流を生成するステップと、
上記第1の電流を増幅器の1つの入力端子に供給するステップと、
上記第2の電流を上記増幅器の第2の入力端子に供給するステップと、
上記増幅器の出力信号を信号検出器に供給するステップとを有し、
上記信号検出器の出力信号は、上記光受信機の出力パワーレベルを示すことを特徴とする信号パワーレベル検出方法。 - 上記増幅器は、互いに分離された少なくとも2つの出力端子を備えることを特徴とする請求項9記載の信号パワーレベル検出方法。
- 上記増幅器は、差動トランスインピーダンス増幅器であることを特徴とする請求項10記載の信号パワーレベル検出方法。
- 上記差動トランスインピーダンス増幅器のトランスインピーダンスは、トランジスタの差動対におけるフィードバックを用いて制御されることを特徴とする請求項11記載の信号パワーレベル検出方法。
- 上記信号検出器は、信号パワーレベル検出回路から出力される元の信号の信号強度を検出することを特徴とする請求項12記載の信号パワーレベル検出方法。
- 上記増幅器は、デュアルトランスインピーダンス増幅器及び差動出力増幅器を備えることを特徴とする請求項10記載の信号パワーレベル検出方法。
- 上記信号検出器は、信号パワーレベル検出回路から出力される元の信号の信号強度を検出することを特徴とする請求項14記載の信号パワーレベル検出方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60101804P | 2004-08-12 | 2004-08-12 | |
US60/601,018 | 2004-08-12 | ||
PCT/US2005/028359 WO2006020682A1 (en) | 2004-08-12 | 2005-08-10 | Level detector for optical receivers |
Publications (3)
Publication Number | Publication Date |
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JP2008510383A true JP2008510383A (ja) | 2008-04-03 |
JP2008510383A5 JP2008510383A5 (ja) | 2008-09-25 |
JP5087773B2 JP5087773B2 (ja) | 2012-12-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007525750A Expired - Fee Related JP5087773B2 (ja) | 2004-08-12 | 2005-08-10 | 光信号検出回路及び方法 |
Country Status (5)
Country | Link |
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US (3) | US20060034620A1 (ja) |
EP (1) | EP1779558B1 (ja) |
JP (1) | JP5087773B2 (ja) |
CN (1) | CN101040468B (ja) |
WO (3) | WO2006020682A1 (ja) |
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Also Published As
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WO2006017846A3 (en) | 2007-03-01 |
EP1779558A4 (en) | 2008-02-20 |
US20060034619A1 (en) | 2006-02-16 |
WO2006020682A1 (en) | 2006-02-23 |
CN101040468B (zh) | 2012-07-04 |
EP1779558A1 (en) | 2007-05-02 |
EP1779558B1 (en) | 2012-11-28 |
WO2006017846A2 (en) | 2006-02-16 |
WO2006020695A3 (en) | 2006-05-04 |
JP5087773B2 (ja) | 2012-12-05 |
US7734193B2 (en) | 2010-06-08 |
US20060034622A1 (en) | 2006-02-16 |
US20060034620A1 (en) | 2006-02-16 |
CN101040468A (zh) | 2007-09-19 |
WO2006020695A2 (en) | 2006-02-23 |
US7505696B2 (en) | 2009-03-17 |
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