JP2008507127A5 - - Google Patents

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Publication number
JP2008507127A5
JP2008507127A5 JP2007520958A JP2007520958A JP2008507127A5 JP 2008507127 A5 JP2008507127 A5 JP 2008507127A5 JP 2007520958 A JP2007520958 A JP 2007520958A JP 2007520958 A JP2007520958 A JP 2007520958A JP 2008507127 A5 JP2008507127 A5 JP 2008507127A5
Authority
JP
Japan
Prior art keywords
region
channel region
nanostructure
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007520958A
Other languages
English (en)
Japanese (ja)
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JP2008507127A (ja
Filing date
Publication date
Priority claimed from GBGB0415891.1A external-priority patent/GB0415891D0/en
Application filed filed Critical
Publication of JP2008507127A publication Critical patent/JP2008507127A/ja
Publication of JP2008507127A5 publication Critical patent/JP2008507127A5/ja
Withdrawn legal-status Critical Current

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JP2007520958A 2004-07-16 2005-07-12 ナノスケールｆｅｔ Withdrawn JP2008507127A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0415891.1A GB0415891D0 (en) 2004-07-16 2004-07-16 Nanoscale fet
PCT/IB2005/052313 WO2006008703A2 (en) 2004-07-16 2005-07-12 Nanoscale fet

Publications (2)

Publication Number Publication Date
JP2008507127A JP2008507127A (ja) 2008-03-06
JP2008507127A5 true JP2008507127A5 (enExample) 2008-08-28

Family

ID=32893646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007520958A Withdrawn JP2008507127A (ja) 2004-07-16 2005-07-12 ナノスケールｆｅｔ

Country Status (7)

Country Link
US (1) US7838368B2 (enExample)
EP (1) EP1771888B1 (enExample)
JP (1) JP2008507127A (enExample)
CN (1) CN100521237C (enExample)
AT (1) ATE524831T1 (enExample)
GB (1) GB0415891D0 (enExample)
WO (1) WO2006008703A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858918B2 (en) * 2007-02-05 2010-12-28 Ludwig Lester F Molecular transistor circuits compatible with carbon nanotube sensors and transducers
US7838809B2 (en) 2007-02-17 2010-11-23 Ludwig Lester F Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials
US8389387B2 (en) * 2009-01-06 2013-03-05 Brookhaven Science Associates, Llc Segmented nanowires displaying locally controllable properties
US8890115B2 (en) * 2009-01-06 2014-11-18 Brookhaven Science Associates, Llc Stable and metastable nanowires displaying locally controllable properties
KR101791368B1 (ko) 2011-12-23 2017-10-27 인텔 코포레이션 랩-어라운드 컨택트들을 가진 나노와이어 구조들
EP2741337B1 (en) * 2012-12-07 2018-04-11 IMEC vzw Semiconductor heterostructure field effect transistor and method for making thereof
WO2014179340A2 (en) * 2013-04-29 2014-11-06 The University Of North Carolina At Chapel Hill Methods and systems for chemically encoding high-resolution shapes in silicon nanowires
US9741811B2 (en) 2014-12-15 2017-08-22 Samsung Electronics Co., Ltd. Integrated circuit devices including source/drain extension regions and methods of forming the same
CN105990413B (zh) 2015-02-06 2020-11-17 联华电子股份有限公司 具有纳米线结构的半导体结构与制造方法
CN105789442B (zh) * 2016-05-23 2018-12-18 京东方科技集团股份有限公司 一种薄膜晶体管、其制作方法及相应装置
US11004985B2 (en) * 2016-05-30 2021-05-11 Samsung Electronics Co., Ltd. Semiconductor device having multi-thickness nanowire
CN119545838B (zh) * 2024-11-26 2025-09-16 北京智芯微电子科技有限公司 环栅场效应晶体管及其制备方法、芯片和电子设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002003482A1 (de) * 2000-07-04 2002-01-10 Infineon Technologies Ag Feldeffekttransistor
GB2382718B (en) 2000-07-18 2004-03-24 Lg Electronics Inc Field effect transistor using horizontally grown carbon nanotubes
GB2364933B (en) * 2000-07-18 2002-12-31 Lg Electronics Inc Method of horizontally growing carbon nanotubes
TW554388B (en) * 2001-03-30 2003-09-21 Univ California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
AU2003215840A1 (en) * 2002-03-28 2003-10-13 Koninklijke Philips Electronics N.V. Nanowire and electronic device
US7115916B2 (en) * 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
JP5226174B2 (ja) * 2002-11-05 2013-07-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ナノ構造体、そのようなナノ構造体を有する電子機器およびナノ構造体を調製する方法
US7180107B2 (en) * 2004-05-25 2007-02-20 International Business Machines Corporation Method of fabricating a tunneling nanotube field effect transistor

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