JP2010021377A - 電子デバイス,受光・発光デバイス、それを用いた電子集積回路および光集積回路 - Google Patents
電子デバイス,受光・発光デバイス、それを用いた電子集積回路および光集積回路 Download PDFInfo
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- JP2010021377A JP2010021377A JP2008180863A JP2008180863A JP2010021377A JP 2010021377 A JP2010021377 A JP 2010021377A JP 2008180863 A JP2008180863 A JP 2008180863A JP 2008180863 A JP2008180863 A JP 2008180863A JP 2010021377 A JP2010021377 A JP 2010021377A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000002071 nanotube Substances 0.000 abstract description 4
- 238000005452 bending Methods 0.000 abstract description 3
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 48
- 230000005669 field effect Effects 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 239000002073 nanorod Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- -1 ethylene, propylene Chemical group 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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Abstract
グラフェンシートの電子構造を制御し、そのバンドギャップを制御することが可能な電子デバイス,受光・発光デバイス、それを用いた電子集積回路および光集積回路を提供する。
【解決手段】
グラフェンシートを湾曲させることにより、その電子構造を制御する。グラフェンシートを凸構造または凹構造を有する下地膜の上に形成することにより、湾曲させることが可能である。グラフェンシートを湾曲させることにより、湾曲部分に局所的な電子状態を形成することができる。これにより、ナノチューブのシリンダー部分やキャップ部分と同様の電子状態を実現することができ、逆格子空間のK点においてバンドギャップを形成することが可能である。
【選択図】図5
Description
102,202,302,402,502,602,702,802 下地層
103,203,303,403,503,603,703,803 グラフェン層
504,804 ソース電極
505,805 ドレイン電極
506,806 絶縁層
507,807 ゲート電極
604 プラス電極
605 マイナス電極、
Claims (10)
- 基板と、
前記基板上に配置された電極と、
前記基板上に配置され、少なくとも1つの凸構造または凹構造を有する下地層と、
前記下地層の凸構造または凹構造に沿うように配置され、前記電極と直に接続、又は絶縁層を介して配置された少なくとも1層のグラフェンシートと、
を具備することを特徴とする電子デバイス。 - 炭素系ガスを用いた気相成長法により、前記下地層に選択成長させて前記グラフェンシートを配置することを特徴とする請求項1に記載の電子デバイス。
- ナノメーターサイズの物質を転写するナノトランスファー法により、前記グラフェンシートを前記下地層に配置することを特徴とする請求項1に記載の電子デバイス。
- 前記グラフェンシートの層数が、10層未満であることを特徴とする請求項1に記載の電子デバイス。
- 基板と、
前記基板上に配置された電極と、
前記基板上に配置され、少なくとも1つの凸構造または凹構造を有する下地層と、
前記下地層の凸構造または凹構造に沿うように配置され、前記電極と接続された少なくとも1層のグラフェンシートと、
を具備することを特徴とする受光・発光デバイス。 - 炭素系ガスを用いた気相成長法により、前記下地層に選択成長させて前記グラフェンシートを配置することを特徴とする請求項5に記載の受光・発光デバイス。
- ナノメーターサイズの物質を転写するナノトランスファー法により、前記グラフェンシートを前記下地層に配置することを特徴とする請求項5に記載の受光・発光デバイス。
- 前記グラフェンシートの層数が、10層未満であることを特徴とする請求項5に記載の受光・発光デバイス。
- 請求項1乃至4のいずれか1項に記載の電子デバイスを半導体基板またはフレキシブル基板に集積した電子集積回路。
- 請求項5乃至8のいずれか1項に記載の受光・発光デバイスを半導体基板またはフレキシブル基板に集積した光集積回路。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008180863A JP5124373B2 (ja) | 2008-07-11 | 2008-07-11 | 電子デバイス,受光・発光デバイス、それを用いた電子集積回路および光集積回路 |
PCT/JP2009/002305 WO2010004681A1 (ja) | 2008-07-11 | 2009-05-26 | 電子デバイス、受光・発光デバイス、それを用いた電子集積回路および光集積回路 |
US13/003,323 US8507893B2 (en) | 2008-07-11 | 2009-05-26 | Electronic device, light-receiving and light-emitting device, electronic integrated circuit and optical integrated circuit using the devices |
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JP2008180863A JP5124373B2 (ja) | 2008-07-11 | 2008-07-11 | 電子デバイス,受光・発光デバイス、それを用いた電子集積回路および光集積回路 |
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JP2010021377A true JP2010021377A (ja) | 2010-01-28 |
JP5124373B2 JP5124373B2 (ja) | 2013-01-23 |
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JP2008180863A Expired - Fee Related JP5124373B2 (ja) | 2008-07-11 | 2008-07-11 | 電子デバイス,受光・発光デバイス、それを用いた電子集積回路および光集積回路 |
Country Status (3)
Country | Link |
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US (1) | US8507893B2 (ja) |
JP (1) | JP5124373B2 (ja) |
WO (1) | WO2010004681A1 (ja) |
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JP2012138451A (ja) * | 2010-12-27 | 2012-07-19 | Hitachi Ltd | グラフェン膜と金属電極とが電気的接合した回路装置 |
JP2012247189A (ja) * | 2011-05-25 | 2012-12-13 | Hitachi Ltd | グラフェンセンサ、該センサを利用した物質種分析装置および該センサを利用した物質種検知方法 |
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JP2010062358A (ja) * | 2008-09-04 | 2010-03-18 | Nippon Telegr & Teleph Corp <Ntt> | 抵抗可変電子素子 |
US9166099B2 (en) | 2010-09-16 | 2015-10-20 | Samsung Electronics Co., Ltd. | Graphene light-emitting device and method of manufacturing the same |
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US11078082B2 (en) | 2014-10-31 | 2021-08-03 | Samsung Electronics Co., Ltd. | Method of fabricating graphene structure having nanobubbles |
JP2019169544A (ja) * | 2018-03-22 | 2019-10-03 | 株式会社東芝 | グラフェン含有構造体、半導体装置、およびグラフェン含有構造体の製造方法 |
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WO2010004681A1 (ja) | 2010-01-14 |
US20110108805A1 (en) | 2011-05-12 |
US8507893B2 (en) | 2013-08-13 |
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