JP5763302B2 - グラフェンの製造方法 - Google Patents
グラフェンの製造方法 Download PDFInfo
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- JP5763302B2 JP5763302B2 JP2010087688A JP2010087688A JP5763302B2 JP 5763302 B2 JP5763302 B2 JP 5763302B2 JP 2010087688 A JP2010087688 A JP 2010087688A JP 2010087688 A JP2010087688 A JP 2010087688A JP 5763302 B2 JP5763302 B2 JP 5763302B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 106
- 229910021389 graphene Inorganic materials 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 69
- 239000002041 carbon nanotube Substances 0.000 claims description 33
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 33
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 28
- 229910003472 fullerene Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 28
- 229910052799 carbon Inorganic materials 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 239000003054 catalyst Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001953 recrystallisation Methods 0.000 claims description 3
- 239000003575 carbonaceous material Substances 0.000 claims description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000005224 laser annealing Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0061—Methods for manipulating nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2214/00—Aspects relating to resistive heating, induction heating and heating using microwaves, covered by groups H05B3/00, H05B6/00
- H05B2214/04—Heating means manufactured by using nanotechnology
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Carbon And Carbon Compounds (AREA)
Description
11,12 カーボンナノチューブ
13,23 二次元構造のグラフェン
21,22,23 フラーレン
31 カーボンナノチューブまたはフラーレン
33 基板領域
34 グラフェン
L アニーリング工程
Claims (5)
- グラフェンの製造方法において、
基板上に炭素含有物質を整列させる段階と、
前記炭素含有物質が形成された前記基板に対してアニーリングを実施し、前記基板上にグラフェンを製造する段階とを含み、
前記炭素含有物質は、カーボンナノチューブまたはフラーレンであり、
前記アニーリング工程は、レーザまたはRTA工程によって、前記基板の前記炭素含有物質と接触した面の局部溶融温度または再結晶温度以上の温度に加熱することを特徴とするグラフェンの製造方法。 - 前記基板はSi、SiC、SOI、a−Si、poly−Si、a−SiCまたはガラス基板であることを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記基板はa−Si、poly−Si、a−SiC、GeまたはGeCのうち、少なくともいずれか一つが形成されたガラス基板または石英基板であることを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記基板がSiを含む場合、前記アニーリング工程によって、前記炭素含有物質下部の基板には、SiCが形成されることを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記基板上に炭素含有物質を整列させる段階は、前記基板上に多数の金属触媒を整列させ、炭素ソースガスを供給することを含むことを特徴とする請求項1から4のいずれか一項に記載のグラフェンの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090029882A KR101611410B1 (ko) | 2009-04-07 | 2009-04-07 | 그래핀의 제조 방법 |
KR10-2009-0029882 | 2009-04-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010241680A JP2010241680A (ja) | 2010-10-28 |
JP5763302B2 true JP5763302B2 (ja) | 2015-08-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010087688A Expired - Fee Related JP5763302B2 (ja) | 2009-04-07 | 2010-04-06 | グラフェンの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8632855B2 (ja) |
JP (1) | JP5763302B2 (ja) |
KR (1) | KR101611410B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7192171B2 (ja) | 2020-10-04 | 2022-12-20 | 株式会社Exizzle-Line | 自動車用ルームミラー |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101758649B1 (ko) * | 2010-03-31 | 2017-07-18 | 삼성전자주식회사 | 게르마늄층을 이용한 그래핀 제조방법 |
US8877340B2 (en) * | 2010-07-27 | 2014-11-04 | International Business Machines Corporation | Graphene growth on a non-hexagonal lattice |
US20120068161A1 (en) * | 2010-09-16 | 2012-03-22 | Lee Keon-Jae | Method for forming graphene using laser beam, graphene semiconductor manufactured by the same, and graphene transistor having graphene semiconductor |
US20140150970A1 (en) | 2010-11-19 | 2014-06-05 | Ppg Industries Ohio, Inc. | Structural adhesive compositions |
US8796361B2 (en) | 2010-11-19 | 2014-08-05 | Ppg Industries Ohio, Inc. | Adhesive compositions containing graphenic carbon particles |
KR20120087844A (ko) * | 2011-01-28 | 2012-08-07 | 국립대학법인 울산과학기술대학교 산학협력단 | 그라펜의 제조 방법, 이를 포함하는 투명 전극, 활성층, 이를 구비한 표시소자, 전자소자, 광전소자, 배터리, 태양전지 및 염료감응 태양전지 |
KR101332796B1 (ko) * | 2011-05-03 | 2013-11-25 | 한국과학기술원 | 그래핀의 제조 방법 및 그래핀의 제조 장치 |
US9938416B2 (en) | 2011-09-30 | 2018-04-10 | Ppg Industries Ohio, Inc. | Absorptive pigments comprising graphenic carbon particles |
US8486363B2 (en) | 2011-09-30 | 2013-07-16 | Ppg Industries Ohio, Inc. | Production of graphenic carbon particles utilizing hydrocarbon precursor materials |
US9761903B2 (en) | 2011-09-30 | 2017-09-12 | Ppg Industries Ohio, Inc. | Lithium ion battery electrodes including graphenic carbon particles |
US9832818B2 (en) | 2011-09-30 | 2017-11-28 | Ppg Industries Ohio, Inc. | Resistive heating coatings containing graphenic carbon particles |
US9475946B2 (en) | 2011-09-30 | 2016-10-25 | Ppg Industries Ohio, Inc. | Graphenic carbon particle co-dispersions and methods of making same |
US10763490B2 (en) | 2011-09-30 | 2020-09-01 | Ppg Industries Ohio, Inc. | Methods of coating an electrically conductive substrate and related electrodepositable compositions including graphenic carbon particles |
US10240052B2 (en) | 2011-09-30 | 2019-03-26 | Ppg Industries Ohio, Inc. | Supercapacitor electrodes including graphenic carbon particles |
US9988551B2 (en) | 2011-09-30 | 2018-06-05 | Ppg Industries Ohio, Inc. | Black pigments comprising graphenic carbon particles |
US9574094B2 (en) | 2013-12-09 | 2017-02-21 | Ppg Industries Ohio, Inc. | Graphenic carbon particle dispersions and methods of making same |
US10294375B2 (en) | 2011-09-30 | 2019-05-21 | Ppg Industries Ohio, Inc. | Electrically conductive coatings containing graphenic carbon particles |
JP6328870B2 (ja) * | 2011-11-11 | 2018-05-23 | 株式会社Ihi | ナノ構造物の製造方法 |
KR101941957B1 (ko) * | 2011-11-18 | 2019-01-25 | 엘지디스플레이 주식회사 | 그래핀막의 제조방법, 이를 이용한 터치소자의 제조방법 |
CN102492922B (zh) * | 2011-12-27 | 2013-07-03 | 哈尔滨工业大学 | 一种采用热蒸发GeC制备石墨烯的方法 |
TWI458678B (zh) | 2011-12-30 | 2014-11-01 | Ind Tech Res Inst | 石墨烯層的形成方法 |
JP5867718B2 (ja) * | 2012-03-02 | 2016-02-24 | 国立大学法人大阪大学 | SiC表面へのグラフェンの低温形成方法 |
KR101572066B1 (ko) * | 2013-12-30 | 2015-11-26 | 한국표준과학연구원 | 단결정 그래핀의 제조방법 |
KR101431606B1 (ko) | 2014-02-24 | 2014-08-22 | (주)앤피에스 | 기판 처리 장치 |
WO2015180163A1 (en) * | 2014-05-30 | 2015-12-03 | East China University Of Science And Technology | Methods and systems for converting carbon dioxide into graphene |
US9287359B1 (en) * | 2014-09-15 | 2016-03-15 | Wisconsin Alumni Research Foundation | Oriented bottom-up growth of armchair graphene nanoribbons on germanium |
CN105731426A (zh) * | 2014-12-10 | 2016-07-06 | 黑龙江鑫达企业集团有限公司 | 一种采用热蒸发GeC制备石墨烯的方法 |
KR101716785B1 (ko) * | 2015-03-02 | 2017-03-28 | 서울대학교산학협력단 | 그래핀의 제조 방법 및 제조 장치 |
US10377928B2 (en) | 2015-12-10 | 2019-08-13 | Ppg Industries Ohio, Inc. | Structural adhesive compositions |
US10351661B2 (en) | 2015-12-10 | 2019-07-16 | Ppg Industries Ohio, Inc. | Method for producing an aminimide |
US10273574B2 (en) | 2016-03-18 | 2019-04-30 | Honda Motor Co., Ltd. | Method for continuous production of high quality graphene |
US11396696B2 (en) | 2016-03-18 | 2022-07-26 | Honda Motor Co., Ltd. | Method for continuous coating of metal foils and wires by high-quality graphene |
KR102517904B1 (ko) | 2016-04-29 | 2023-04-05 | 솔브레인 주식회사 | 그래핀의 제조방법 |
US9761669B1 (en) | 2016-07-18 | 2017-09-12 | Wisconsin Alumni Research Foundation | Seed-mediated growth of patterned graphene nanoribbon arrays |
WO2020226620A1 (en) * | 2019-05-06 | 2020-11-12 | Michael Kwabena Opoku | Method of making nanomaterials from a renewable carbon source |
US11433353B2 (en) | 2019-06-06 | 2022-09-06 | Savannah River Nuclear Solutions, Llc | Hydrogen isotope separation methods and systems |
CN113840801B (zh) * | 2020-04-24 | 2024-04-16 | 国家纳米科学中心 | 一种超快生长石墨烯的方法 |
KR102482649B1 (ko) * | 2020-07-09 | 2022-12-29 | (주)에프에스티 | 극자외선 리소그라피용 펠리클의 제조방법 |
US11618681B2 (en) | 2021-06-28 | 2023-04-04 | Wisconsin Alumni Research Foundation | Graphene nanoribbons grown from aromatic molecular seeds |
KR102504698B1 (ko) * | 2022-04-04 | 2023-02-28 | 주식회사 그래핀랩 | 펠리클 제조방법 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4434013A (en) * | 1980-02-19 | 1984-02-28 | Xerox Corporation | Method of making a self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain |
KR900001825B1 (ko) * | 1984-11-14 | 1990-03-24 | 가부시끼가이샤 히다찌세이사꾸쇼 | 성막 지향성을 고려한 스퍼터링장치 |
JP2626289B2 (ja) * | 1990-03-27 | 1997-07-02 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US5985452A (en) | 1997-03-18 | 1999-11-16 | Ucar Carbon Technology Corporation | Flexible graphite composite sheet and method |
JP3074170B1 (ja) | 1999-05-27 | 2000-08-07 | 大澤 映二 | ナノサイズ真球状黒鉛製造方法 |
JP2002348110A (ja) | 2001-05-28 | 2002-12-04 | Mitsui Mining Co Ltd | 黒鉛粒子、及びその製造方法 |
JP4483152B2 (ja) | 2001-11-27 | 2010-06-16 | 富士ゼロックス株式会社 | 中空グラフェンシート構造体及び電極構造体とそれら製造方法並びにデバイス |
CN1301212C (zh) * | 2002-09-17 | 2007-02-21 | 清华大学 | 一维纳米材料方向及形状调整方法 |
EP1434282A3 (en) * | 2002-12-26 | 2007-06-27 | Konica Minolta Holdings, Inc. | Protective layer for an organic thin-film transistor |
US7989067B2 (en) | 2003-06-12 | 2011-08-02 | Georgia Tech Research Corporation | Incorporation of functionalizing molecules in nanopatterned epitaxial graphene electronics |
US8039961B2 (en) * | 2003-08-25 | 2011-10-18 | Samsung Electronics Co., Ltd. | Composite carbon nanotube-based structures and methods for removing heat from solid-state devices |
US7618300B2 (en) * | 2003-12-24 | 2009-11-17 | Duke University | Method of synthesizing small-diameter carbon nanotubes with electron field emission properties |
JP2007027505A (ja) * | 2005-07-19 | 2007-02-01 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4899368B2 (ja) * | 2005-07-29 | 2012-03-21 | ソニー株式会社 | 金属的単層カーボンナノチューブの破壊方法、半導体的単層カーボンナノチューブ集合体の製造方法、半導体的単層カーボンナノチューブ薄膜の製造方法、半導体的単層カーボンナノチューブの破壊方法、金属的単層カーボンナノチューブ集合体の製造方法、金属的単層カーボンナノチューブ薄膜の製造方法、電子素子の製造方法およびカーボンナノチューブfetの製造方法 |
US7566410B2 (en) | 2006-01-11 | 2009-07-28 | Nanotek Instruments, Inc. | Highly conductive nano-scaled graphene plate nanocomposites |
KR20060096413A (ko) | 2006-02-28 | 2006-09-11 | 카네카 코포레이션 | 필름 형상 그라파이트와 그 제조 방법 |
KR100741762B1 (ko) | 2006-03-28 | 2007-07-24 | 한국에너지기술연구원 | 그라파이트 박판 위에 탄소나노튜브를 합성하는 방법 |
US7550778B2 (en) * | 2006-05-17 | 2009-06-23 | Innovative Micro Technology | System and method for providing access to an encapsulated device |
US7416605B2 (en) * | 2007-01-08 | 2008-08-26 | Freescale Semiconductor, Inc. | Anneal of epitaxial layer in a semiconductor device |
US7824741B2 (en) * | 2007-08-31 | 2010-11-02 | Micron Technology, Inc. | Method of forming a carbon-containing material |
JP5137066B2 (ja) * | 2007-09-10 | 2013-02-06 | 国立大学法人福井大学 | グラフェンシートの製造方法 |
KR20090026568A (ko) * | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
JP5245385B2 (ja) * | 2007-12-13 | 2013-07-24 | 富士通株式会社 | グラフェンシートの製造方法、半導体装置の製造方法および半導体装置 |
US8133793B2 (en) * | 2008-05-16 | 2012-03-13 | Sandisk 3D Llc | Carbon nano-film reversible resistance-switchable elements and methods of forming the same |
-
2009
- 2009-04-07 KR KR1020090029882A patent/KR101611410B1/ko active IP Right Grant
-
2010
- 2010-02-17 US US12/656,823 patent/US8632855B2/en not_active Expired - Fee Related
- 2010-04-06 JP JP2010087688A patent/JP5763302B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7192171B2 (ja) | 2020-10-04 | 2022-12-20 | 株式会社Exizzle-Line | 自動車用ルームミラー |
Also Published As
Publication number | Publication date |
---|---|
KR20100111447A (ko) | 2010-10-15 |
KR101611410B1 (ko) | 2016-04-11 |
JP2010241680A (ja) | 2010-10-28 |
US20100255219A1 (en) | 2010-10-07 |
US8632855B2 (en) | 2014-01-21 |
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