JP2008507127A - ナノスケールｆｅｔ - Google Patents

ナノスケールｆｅｔ Download PDF

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Publication number
JP2008507127A
JP2008507127A JP2007520958A JP2007520958A JP2008507127A JP 2008507127 A JP2008507127 A JP 2008507127A JP 2007520958 A JP2007520958 A JP 2007520958A JP 2007520958 A JP2007520958 A JP 2007520958A JP 2008507127 A JP2008507127 A JP 2008507127A
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JP
Japan
Prior art keywords
region
channel region
nanostructure
source
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007520958A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008507127A5 (enExample
Inventor
ラドゥ、スーディヌ
プラブハット、アガルバル
アブラハム、ルドルフ、バルケネンデ
エリック、ペー．アー．エム．バッカース
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV, Koninklijke Philips Electronics NV filed Critical Koninklijke Philips NV
Publication of JP2008507127A publication Critical patent/JP2008507127A/ja
Publication of JP2008507127A5 publication Critical patent/JP2008507127A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/818—III-P based compounds, e.g. AlxGayIn2P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
JP2007520958A 2004-07-16 2005-07-12 ナノスケールｆｅｔ Withdrawn JP2008507127A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0415891.1A GB0415891D0 (en) 2004-07-16 2004-07-16 Nanoscale fet
PCT/IB2005/052313 WO2006008703A2 (en) 2004-07-16 2005-07-12 Nanoscale fet

Publications (2)

Publication Number Publication Date
JP2008507127A true JP2008507127A (ja) 2008-03-06
JP2008507127A5 JP2008507127A5 (enExample) 2008-08-28

Family

ID=32893646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007520958A Withdrawn JP2008507127A (ja) 2004-07-16 2005-07-12 ナノスケールｆｅｔ

Country Status (7)

Country Link
US (1) US7838368B2 (enExample)
EP (1) EP1771888B1 (enExample)
JP (1) JP2008507127A (enExample)
CN (1) CN100521237C (enExample)
AT (1) ATE524831T1 (enExample)
GB (1) GB0415891D0 (enExample)
WO (1) WO2006008703A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014132643A (ja) * 2012-12-07 2014-07-17 Imec 半導体ヘテロ構造電界効果トランジスタおよびその製造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858918B2 (en) * 2007-02-05 2010-12-28 Ludwig Lester F Molecular transistor circuits compatible with carbon nanotube sensors and transducers
US7838809B2 (en) 2007-02-17 2010-11-23 Ludwig Lester F Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials
US8389387B2 (en) * 2009-01-06 2013-03-05 Brookhaven Science Associates, Llc Segmented nanowires displaying locally controllable properties
US8890115B2 (en) * 2009-01-06 2014-11-18 Brookhaven Science Associates, Llc Stable and metastable nanowires displaying locally controllable properties
CN104137228A (zh) * 2011-12-23 2014-11-05 英特尔公司 具有环绕式接触部的纳米线结构
WO2014179340A2 (en) * 2013-04-29 2014-11-06 The University Of North Carolina At Chapel Hill Methods and systems for chemically encoding high-resolution shapes in silicon nanowires
US9741811B2 (en) 2014-12-15 2017-08-22 Samsung Electronics Co., Ltd. Integrated circuit devices including source/drain extension regions and methods of forming the same
CN105990413B (zh) * 2015-02-06 2020-11-17 联华电子股份有限公司 具有纳米线结构的半导体结构与制造方法
CN105789442B (zh) * 2016-05-23 2018-12-18 京东方科技集团股份有限公司 一种薄膜晶体管、其制作方法及相应装置
US11004985B2 (en) * 2016-05-30 2021-05-11 Samsung Electronics Co., Ltd. Semiconductor device having multi-thickness nanowire
CN119545838B (zh) * 2024-11-26 2025-09-16 北京智芯微电子科技有限公司 环栅场效应晶体管及其制备方法、芯片和电子设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4112358B2 (ja) 2000-07-04 2008-07-02 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 電界効果トランジスタ
GB2382718B (en) 2000-07-18 2004-03-24 Lg Electronics Inc Field effect transistor using horizontally grown carbon nanotubes
JP3859199B2 (ja) * 2000-07-18 2006-12-20 エルジー エレクトロニクス インコーポレイティド カーボンナノチューブの水平成長方法及びこれを利用した電界効果トランジスタ
KR101008294B1 (ko) * 2001-03-30 2011-01-13 더 리전트 오브 더 유니버시티 오브 캘리포니아 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스
AU2003215840A1 (en) * 2002-03-28 2003-10-13 Koninklijke Philips Electronics N.V. Nanowire and electronic device
US7115916B2 (en) * 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
CN100459181C (zh) * 2002-11-05 2009-02-04 皇家飞利浦电子股份有限公司 纳米结构、具有这种纳米结构的电子器件和纳米结构的制造方法
US7180107B2 (en) * 2004-05-25 2007-02-20 International Business Machines Corporation Method of fabricating a tunneling nanotube field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014132643A (ja) * 2012-12-07 2014-07-17 Imec 半導体ヘテロ構造電界効果トランジスタおよびその製造方法

Also Published As

Publication number Publication date
EP1771888A2 (en) 2007-04-11
US7838368B2 (en) 2010-11-23
EP1771888B1 (en) 2011-09-14
WO2006008703A2 (en) 2006-01-26
US20070262397A1 (en) 2007-11-15
WO2006008703A3 (en) 2006-06-22
ATE524831T1 (de) 2011-09-15
CN1985378A (zh) 2007-06-20
GB0415891D0 (en) 2004-08-18
CN100521237C (zh) 2009-07-29

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