CN100521237C - 纳米尺度fet - Google Patents

纳米尺度fet Download PDF

Info

Publication number
CN100521237C
CN100521237C CNB2005800239721A CN200580023972A CN100521237C CN 100521237 C CN100521237 C CN 100521237C CN B2005800239721 A CNB2005800239721 A CN B2005800239721A CN 200580023972 A CN200580023972 A CN 200580023972A CN 100521237 C CN100521237 C CN 100521237C
Authority
CN
China
Prior art keywords
channel region
region
nanostructure
growth
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005800239721A
Other languages
English (en)
Chinese (zh)
Other versions
CN1985378A (zh
Inventor
R·叙尔迪努
P·阿加瓦尔
A·R·巴尔克宁德
E·P·A·M·巴克斯
Original Assignee
NXP BV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV, Koninklijke Philips Electronics NV filed Critical NXP BV
Publication of CN1985378A publication Critical patent/CN1985378A/zh
Application granted granted Critical
Publication of CN100521237C publication Critical patent/CN100521237C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/818—III-P based compounds, e.g. AlxGayIn2P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
CNB2005800239721A 2004-07-16 2005-07-12 纳米尺度fet Expired - Fee Related CN100521237C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0415891.1 2004-07-16
GBGB0415891.1A GB0415891D0 (en) 2004-07-16 2004-07-16 Nanoscale fet

Publications (2)

Publication Number Publication Date
CN1985378A CN1985378A (zh) 2007-06-20
CN100521237C true CN100521237C (zh) 2009-07-29

Family

ID=32893646

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800239721A Expired - Fee Related CN100521237C (zh) 2004-07-16 2005-07-12 纳米尺度fet

Country Status (7)

Country Link
US (1) US7838368B2 (enExample)
EP (1) EP1771888B1 (enExample)
JP (1) JP2008507127A (enExample)
CN (1) CN100521237C (enExample)
AT (1) ATE524831T1 (enExample)
GB (1) GB0415891D0 (enExample)
WO (1) WO2006008703A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789442A (zh) * 2016-05-23 2016-07-20 京东方科技集团股份有限公司 一种薄膜晶体管、其制作方法及相应装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858918B2 (en) * 2007-02-05 2010-12-28 Ludwig Lester F Molecular transistor circuits compatible with carbon nanotube sensors and transducers
US7838809B2 (en) 2007-02-17 2010-11-23 Ludwig Lester F Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials
US8389387B2 (en) * 2009-01-06 2013-03-05 Brookhaven Science Associates, Llc Segmented nanowires displaying locally controllable properties
US8890115B2 (en) * 2009-01-06 2014-11-18 Brookhaven Science Associates, Llc Stable and metastable nanowires displaying locally controllable properties
KR101791368B1 (ko) 2011-12-23 2017-10-27 인텔 코포레이션 랩-어라운드 컨택트들을 가진 나노와이어 구조들
EP2741337B1 (en) * 2012-12-07 2018-04-11 IMEC vzw Semiconductor heterostructure field effect transistor and method for making thereof
WO2014179340A2 (en) * 2013-04-29 2014-11-06 The University Of North Carolina At Chapel Hill Methods and systems for chemically encoding high-resolution shapes in silicon nanowires
US9741811B2 (en) 2014-12-15 2017-08-22 Samsung Electronics Co., Ltd. Integrated circuit devices including source/drain extension regions and methods of forming the same
CN105990413B (zh) 2015-02-06 2020-11-17 联华电子股份有限公司 具有纳米线结构的半导体结构与制造方法
US11004985B2 (en) * 2016-05-30 2021-05-11 Samsung Electronics Co., Ltd. Semiconductor device having multi-thickness nanowire
CN119545838B (zh) * 2024-11-26 2025-09-16 北京智芯微电子科技有限公司 环栅场效应晶体管及其制备方法、芯片和电子设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1334234A (zh) * 2000-07-18 2002-02-06 Lg电子株式会社 水平生长碳纳米管的方法和使用碳纳米管的场效应晶体管
US20030148562A1 (en) * 2000-07-04 2003-08-07 Luyken Richard Johannes Field effect transistor
WO2003083949A1 (en) * 2002-03-28 2003-10-09 Koninklijke Philips Electronics N.V. Nanowire and electronic device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2382718B (en) 2000-07-18 2004-03-24 Lg Electronics Inc Field effect transistor using horizontally grown carbon nanotubes
TW554388B (en) * 2001-03-30 2003-09-21 Univ California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US7115916B2 (en) * 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
JP5226174B2 (ja) * 2002-11-05 2013-07-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ナノ構造体、そのようなナノ構造体を有する電子機器およびナノ構造体を調製する方法
US7180107B2 (en) * 2004-05-25 2007-02-20 International Business Machines Corporation Method of fabricating a tunneling nanotube field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030148562A1 (en) * 2000-07-04 2003-08-07 Luyken Richard Johannes Field effect transistor
CN1334234A (zh) * 2000-07-18 2002-02-06 Lg电子株式会社 水平生长碳纳米管的方法和使用碳纳米管的场效应晶体管
WO2003083949A1 (en) * 2002-03-28 2003-10-09 Koninklijke Philips Electronics N.V. Nanowire and electronic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789442A (zh) * 2016-05-23 2016-07-20 京东方科技集团股份有限公司 一种薄膜晶体管、其制作方法及相应装置

Also Published As

Publication number Publication date
WO2006008703A3 (en) 2006-06-22
EP1771888A2 (en) 2007-04-11
ATE524831T1 (de) 2011-09-15
US7838368B2 (en) 2010-11-23
WO2006008703A2 (en) 2006-01-26
GB0415891D0 (en) 2004-08-18
EP1771888B1 (en) 2011-09-14
US20070262397A1 (en) 2007-11-15
JP2008507127A (ja) 2008-03-06
CN1985378A (zh) 2007-06-20

Similar Documents

Publication Publication Date Title
US7858965B2 (en) Nanowire heterostructures
EP1979946B1 (en) Nanowire tunneling transistor
US7452778B2 (en) Semiconductor nano-wire devices and methods of fabrication
US8313990B2 (en) Nanowire FET having induced radial strain
US8530293B2 (en) Continuous metal semiconductor alloy via for interconnects
CN100456496C (zh) 半导体结构和形成该半导体结构的方法
US8212336B2 (en) Field effect transistor source or drain with a multi-facet surface
US20110108804A1 (en) Maskless Process for Suspending and Thinning Nanowires
KR20160003343A (ko) ＳｉＣ 핀들 또는 나노와이어 템플레이트들로부터 제조되는 그래핀 나노리본들 및 카본 나노튜브들
WO2007022359A2 (en) Vertical integrated silicon nanowire field effect transistors and methods of fabrication
KR20080096791A (ko) 장벽 영역을 포함하는 트랜지스터
US7838368B2 (en) Nanoscale fet
US9570299B1 (en) Formation of SiGe nanotubes
CN102646643B (zh) 基于SOI的积累型Si-NWFET制备方法
JP2009239078A (ja) ナノワイヤトランジスタおよび半導体集積回路
CN102646624B (zh) 基于SOI的三维阵列式后栅型Si-NWFET制造方法
US20100068828A1 (en) Method of forming a structure having a giant resistance anisotropy or low-k dielectric
CN102637605B (zh) 基于SOI的后栅型积累模式Si-NWFET制备方法
Yang et al. CMOS compatible gate-all-around vertical silicon-nanowire MOSFETs
KR101338356B1 (ko) 주사 탐침 현미경을 이용한 나노선 트랜지스터의 단채널효과 측정방법
Hu et al. Quantum well nanopillar transistors
Grützmacher et al. Nanowires: Technology, physics and perspectives
CN102664169A (zh) 基于SOI的后栅型积累模式Si-NWFET制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20090206

Address after: Holland Ian Deho Finn

Applicant after: Koninkl Philips Electronics NV

Address before: Holland Ian Deho Finn

Applicant before: Koninklijke Philips Electronics N.V.

ASS Succession or assignment of patent right

Owner name: NXP CO., LTD.

Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Effective date: 20090206

C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090729

Termination date: 20120712