JP2007142417A5 - - Google Patents

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Publication number
JP2007142417A5
JP2007142417A5 JP2006308667A JP2006308667A JP2007142417A5 JP 2007142417 A5 JP2007142417 A5 JP 2007142417A5 JP 2006308667 A JP2006308667 A JP 2006308667A JP 2006308667 A JP2006308667 A JP 2006308667A JP 2007142417 A5 JP2007142417 A5 JP 2007142417A5
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JP
Japan
Prior art keywords
dielectric layer
gate dielectric
semiconductor body
upper corner
layer
Prior art date
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Application number
JP2006308667A
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English (en)
Japanese (ja)
Other versions
JP5159096B2 (ja
JP2007142417A (ja
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Publication date
Priority claimed from US11/164,216 external-priority patent/US7326976B2/en
Application filed filed Critical
Publication of JP2007142417A publication Critical patent/JP2007142417A/ja
Publication of JP2007142417A5 publication Critical patent/JP2007142417A5/ja
Application granted granted Critical
Publication of JP5159096B2 publication Critical patent/JP5159096B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006308667A 2005-11-15 2006-11-15 コーナ部が支配的なトライ・ゲート型電界効果トランジスタ Expired - Fee Related JP5159096B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/164216 2005-11-15
US11/164,216 US7326976B2 (en) 2005-11-15 2005-11-15 Corner dominated trigate field effect transistor

Publications (3)

Publication Number Publication Date
JP2007142417A JP2007142417A (ja) 2007-06-07
JP2007142417A5 true JP2007142417A5 (enExample) 2009-10-08
JP5159096B2 JP5159096B2 (ja) 2013-03-06

Family

ID=38039868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006308667A Expired - Fee Related JP5159096B2 (ja) 2005-11-15 2006-11-15 コーナ部が支配的なトライ・ゲート型電界効果トランジスタ

Country Status (3)

Country Link
US (2) US7326976B2 (enExample)
JP (1) JP5159096B2 (enExample)
CN (1) CN100487917C (enExample)

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Publication number Priority date Publication date Assignee Title
CN101877317B (zh) * 2009-04-29 2013-03-27 台湾积体电路制造股份有限公司 非平坦晶体管及其制造方法
JP4794692B2 (ja) * 2009-06-24 2011-10-19 パナソニック株式会社 半導体装置の製造方法
US8362572B2 (en) 2010-02-09 2013-01-29 Taiwan Semiconductor Manufacturing Co., Ltd. Lower parasitic capacitance FinFET
US8174055B2 (en) * 2010-02-17 2012-05-08 Globalfoundries Inc. Formation of FinFET gate spacer
CN102543745B (zh) * 2010-12-31 2014-09-17 中国科学院微电子研究所 半导体器件的形成方法
US8247278B2 (en) * 2010-12-31 2012-08-21 Institute of Microelectronics, Chinese Academy of Sciences Method for manufacturing semiconductor device
CN102931062B (zh) * 2011-08-09 2015-08-19 中芯国际集成电路制造(上海)有限公司 一种制作鳍式场效应管的翅片结构方法
CN102969248B (zh) * 2011-09-01 2015-06-17 中芯国际集成电路制造(上海)有限公司 一种鳍型场效应晶体管的制作方法
KR102018101B1 (ko) 2013-02-04 2019-11-14 삼성전자 주식회사 반도체 소자 및 이의 제조 방법
FR3002813B1 (fr) 2013-03-01 2016-08-05 St Microelectronics Sa Procede de fabrication d'un transistor mos a ailette
US8987793B2 (en) * 2013-04-23 2015-03-24 Broadcom Corporation Fin-based field-effect transistor with split-gate structure
CN104347415B (zh) * 2013-08-05 2018-03-30 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
US9048123B2 (en) 2013-09-19 2015-06-02 International Business Machines Corporation Interdigitated finFETs
US10084085B2 (en) 2015-06-11 2018-09-25 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same
US9905467B2 (en) 2015-09-04 2018-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
CN107026084B (zh) * 2016-02-02 2020-03-31 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
US10233578B2 (en) 2016-03-17 2019-03-19 Card-Monroe Corp. Tufting machine and method of tufting
US10229919B2 (en) 2016-08-25 2019-03-12 International Business Machines Corporation Vertical field effect transistor including integrated antifuse
CN106356305B (zh) * 2016-11-18 2019-05-31 上海华力微电子有限公司 优化鳍式场效晶体管结构的方法以及鳍式场效晶体管

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3607431B2 (ja) * 1996-09-18 2005-01-05 株式会社東芝 半導体装置およびその製造方法
JP2882392B2 (ja) * 1996-12-25 1999-04-12 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法
KR100261996B1 (ko) * 1997-11-13 2000-07-15 김영환 플래쉬 메모리 셀 및 그의 제조방법
JP3600072B2 (ja) 1998-07-14 2004-12-08 三洋電機株式会社 半導体装置
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
US8222680B2 (en) * 2002-10-22 2012-07-17 Advanced Micro Devices, Inc. Double and triple gate MOSFET devices and methods for making same
US7259425B2 (en) * 2003-01-23 2007-08-21 Advanced Micro Devices, Inc. Tri-gate and gate around MOSFET devices and methods for making same
US6844238B2 (en) * 2003-03-26 2005-01-18 Taiwan Semiconductor Manufacturing Co., Ltd Multiple-gate transistors with improved gate control
US7045401B2 (en) * 2003-06-23 2006-05-16 Sharp Laboratories Of America, Inc. Strained silicon finFET device
US7005330B2 (en) * 2003-06-27 2006-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for forming the gate electrode in a multiple-gate transistor
US7335934B2 (en) * 2003-07-22 2008-02-26 Innovative Silicon S.A. Integrated circuit device, and method of fabricating same
US6855583B1 (en) * 2003-08-05 2005-02-15 Advanced Micro Devices, Inc. Method for forming tri-gate FinFET with mesa isolation
US7172943B2 (en) * 2003-08-13 2007-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-gate transistors formed on bulk substrates
JP2005142203A (ja) * 2003-11-04 2005-06-02 Elpida Memory Inc 半導体装置およびその製造方法
US7186599B2 (en) * 2004-01-12 2007-03-06 Advanced Micro Devices, Inc. Narrow-body damascene tri-gate FinFET
US6888181B1 (en) * 2004-03-18 2005-05-03 United Microelectronics Corp. Triple gate device having strained-silicon channel

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