JP2007518272A5 - - Google Patents
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- Publication number
- JP2007518272A5 JP2007518272A5 JP2006549312A JP2006549312A JP2007518272A5 JP 2007518272 A5 JP2007518272 A5 JP 2007518272A5 JP 2006549312 A JP2006549312 A JP 2006549312A JP 2006549312 A JP2006549312 A JP 2006549312A JP 2007518272 A5 JP2007518272 A5 JP 2007518272A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- providing
- strained
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 17
- 239000004065 semiconductor Substances 0.000 claims 16
- 150000001875 compounds Chemical class 0.000 claims 11
- 239000000463 material Substances 0.000 claims 11
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 3
- 230000001939 inductive effect Effects 0.000 claims 3
- 239000011810 insulating material Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 2
- 238000000407 epitaxy Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/755,763 US7138302B2 (en) | 2004-01-12 | 2004-01-12 | Method of fabricating an integrated circuit channel region |
| PCT/US2004/043106 WO2005071728A1 (en) | 2004-01-12 | 2004-12-21 | Method of fabricating a strained finfet channel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007518272A JP2007518272A (ja) | 2007-07-05 |
| JP2007518272A5 true JP2007518272A5 (enExample) | 2008-02-14 |
Family
ID=34739641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006549312A Pending JP2007518272A (ja) | 2004-01-12 | 2004-12-21 | 歪みｆｉｎｆｅｔチャネルの製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7138302B2 (enExample) |
| EP (1) | EP1723668B1 (enExample) |
| JP (1) | JP2007518272A (enExample) |
| KR (1) | KR101065049B1 (enExample) |
| CN (1) | CN100477126C (enExample) |
| DE (2) | DE602004006782T2 (enExample) |
| TW (1) | TWI360197B (enExample) |
| WO (1) | WO2005071728A1 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| KR100618852B1 (ko) * | 2004-07-27 | 2006-09-01 | 삼성전자주식회사 | 높은 동작 전류를 갖는 반도체 소자 |
| US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
| US7271448B2 (en) * | 2005-02-14 | 2007-09-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple gate field effect transistor structure |
| US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| WO2007112066A2 (en) | 2006-03-24 | 2007-10-04 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures and related methods for device fabrication |
| US7365401B2 (en) * | 2006-03-28 | 2008-04-29 | International Business Machines Corporation | Dual-plane complementary metal oxide semiconductor |
| WO2008030574A1 (en) | 2006-09-07 | 2008-03-13 | Amberwave Systems Corporation | Defect reduction using aspect ratio trapping |
| WO2008039495A1 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Tri-gate field-effect transistors formed by aspect ratio trapping |
| WO2008039534A2 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures |
| US20080187018A1 (en) | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
| US7772048B2 (en) * | 2007-02-23 | 2010-08-10 | Freescale Semiconductor, Inc. | Forming semiconductor fins using a sacrificial fin |
| US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
| US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
| WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
| US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| WO2009035746A2 (en) | 2007-09-07 | 2009-03-19 | Amberwave Systems Corporation | Multi-junction solar cells |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
| US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
| US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
| US7872303B2 (en) * | 2008-08-14 | 2011-01-18 | International Business Machines Corporation | FinFET with longitudinal stress in a channel |
| EP2335273A4 (en) | 2008-09-19 | 2012-01-25 | Taiwan Semiconductor Mfg | FORMATION OF EQUIPMENT BY EXCESSIVE GROWTH OF THE EPITAXIAL LAYER |
| US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
| US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
| EP2415083B1 (en) | 2009-04-02 | 2017-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices formed from a non-polar plane of a crystalline material and method of making the same |
| JP5666961B2 (ja) * | 2011-03-31 | 2015-02-12 | 猛英 白土 | 半導体記憶装置 |
| JP5667017B2 (ja) * | 2011-09-03 | 2015-02-12 | 猛英 白土 | 半導体装置及びその製造方法 |
| FR3029011B1 (fr) | 2014-11-25 | 2018-04-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede ameliore de mise en contrainte d'une zone de canal de transistor |
| US9362400B1 (en) | 2015-03-06 | 2016-06-07 | International Business Machines Corporation | Semiconductor device including dielectrically isolated finFETs and buried stressor |
| US10411128B1 (en) | 2018-05-22 | 2019-09-10 | International Business Machines Corporation | Strained fin channel devices |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6197641B1 (en) * | 1998-08-28 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating vertical transistors |
| JP2002076334A (ja) * | 2000-08-30 | 2002-03-15 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JP3782021B2 (ja) * | 2002-02-22 | 2006-06-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、半導体基板の製造方法 |
| US6635909B2 (en) * | 2002-03-19 | 2003-10-21 | International Business Machines Corporation | Strained fin FETs structure and method |
| CN1225799C (zh) * | 2002-04-24 | 2005-11-02 | 华邦电子股份有限公司 | 金属氧化物半导体场效应晶体管及其制造方法 |
| AU2003237473A1 (en) | 2002-06-07 | 2003-12-22 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| JP4546021B2 (ja) * | 2002-10-02 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型電界効果型トランジスタ及び半導体装置 |
| US6645797B1 (en) * | 2002-12-06 | 2003-11-11 | Advanced Micro Devices, Inc. | Method for forming fins in a FinFET device using sacrificial carbon layer |
| US6806534B2 (en) * | 2003-01-14 | 2004-10-19 | International Business Machines Corporation | Damascene method for improved MOS transistor |
| US6815738B2 (en) * | 2003-02-28 | 2004-11-09 | International Business Machines Corporation | Multiple gate MOSFET structure with strained Si Fin body |
| CN100437970C (zh) * | 2003-03-07 | 2008-11-26 | 琥珀波系统公司 | 一种结构及用于形成半导体结构的方法 |
| US6855583B1 (en) * | 2003-08-05 | 2005-02-15 | Advanced Micro Devices, Inc. | Method for forming tri-gate FinFET with mesa isolation |
| US6835618B1 (en) * | 2003-08-05 | 2004-12-28 | Advanced Micro Devices, Inc. | Epitaxially grown fin for FinFET |
| US6955969B2 (en) * | 2003-09-03 | 2005-10-18 | Advanced Micro Devices, Inc. | Method of growing as a channel region to reduce source/drain junction capacitance |
-
2004
- 2004-01-12 US US10/755,763 patent/US7138302B2/en not_active Expired - Lifetime
- 2004-12-21 JP JP2006549312A patent/JP2007518272A/ja active Pending
- 2004-12-21 CN CNB2004800403064A patent/CN100477126C/zh not_active Expired - Fee Related
- 2004-12-21 EP EP04815218A patent/EP1723668B1/en not_active Ceased
- 2004-12-21 KR KR1020067013878A patent/KR101065049B1/ko not_active Expired - Fee Related
- 2004-12-21 WO PCT/US2004/043106 patent/WO2005071728A1/en not_active Ceased
- 2004-12-21 DE DE602004006782T patent/DE602004006782T2/de not_active Expired - Lifetime
- 2004-12-21 DE DE112004002641T patent/DE112004002641B4/de not_active Expired - Lifetime
-
2005
- 2005-01-07 TW TW094100446A patent/TWI360197B/zh not_active IP Right Cessation
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