TWI360197B - Method of fabricating an integrated circuit channe - Google Patents
Method of fabricating an integrated circuit channe Download PDFInfo
- Publication number
- TWI360197B TWI360197B TW094100446A TW94100446A TWI360197B TW I360197 B TWI360197 B TW I360197B TW 094100446 A TW094100446 A TW 094100446A TW 94100446 A TW94100446 A TW 94100446A TW I360197 B TWI360197 B TW I360197B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- semiconductor layer
- strained
- providing
- compound semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/755,763 US7138302B2 (en) | 2004-01-12 | 2004-01-12 | Method of fabricating an integrated circuit channel region |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200529367A TW200529367A (en) | 2005-09-01 |
| TWI360197B true TWI360197B (en) | 2012-03-11 |
Family
ID=34739641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094100446A TWI360197B (en) | 2004-01-12 | 2005-01-07 | Method of fabricating an integrated circuit channe |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7138302B2 (enExample) |
| EP (1) | EP1723668B1 (enExample) |
| JP (1) | JP2007518272A (enExample) |
| KR (1) | KR101065049B1 (enExample) |
| CN (1) | CN100477126C (enExample) |
| DE (2) | DE112004002641B4 (enExample) |
| TW (1) | TWI360197B (enExample) |
| WO (1) | WO2005071728A1 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| KR100618852B1 (ko) * | 2004-07-27 | 2006-09-01 | 삼성전자주식회사 | 높은 동작 전류를 갖는 반도체 소자 |
| US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
| US7271448B2 (en) * | 2005-02-14 | 2007-09-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple gate field effect transistor structure |
| US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| WO2007112066A2 (en) | 2006-03-24 | 2007-10-04 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures and related methods for device fabrication |
| US7365401B2 (en) * | 2006-03-28 | 2008-04-29 | International Business Machines Corporation | Dual-plane complementary metal oxide semiconductor |
| WO2008030574A1 (en) | 2006-09-07 | 2008-03-13 | Amberwave Systems Corporation | Defect reduction using aspect ratio trapping |
| US7799592B2 (en) | 2006-09-27 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tri-gate field-effect transistors formed by aspect ratio trapping |
| US7875958B2 (en) | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
| US8502263B2 (en) | 2006-10-19 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitter-based devices with lattice-mismatched semiconductor structures |
| US7772048B2 (en) * | 2007-02-23 | 2010-08-10 | Freescale Semiconductor, Inc. | Forming semiconductor fins using a sacrificial fin |
| US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
| US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| US9508890B2 (en) | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
| US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
| US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| WO2009035746A2 (en) | 2007-09-07 | 2009-03-19 | Amberwave Systems Corporation | Multi-junction solar cells |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
| US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
| US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
| US7872303B2 (en) * | 2008-08-14 | 2011-01-18 | International Business Machines Corporation | FinFET with longitudinal stress in a channel |
| US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
| WO2010033813A2 (en) | 2008-09-19 | 2010-03-25 | Amberwave System Corporation | Formation of devices by epitaxial layer overgrowth |
| US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
| CN102379046B (zh) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | 从晶体材料的非极性平面形成的器件及其制作方法 |
| JP5666961B2 (ja) * | 2011-03-31 | 2015-02-12 | 猛英 白土 | 半導体記憶装置 |
| JP5667017B2 (ja) * | 2011-09-03 | 2015-02-12 | 猛英 白土 | 半導体装置及びその製造方法 |
| FR3029011B1 (fr) * | 2014-11-25 | 2018-04-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede ameliore de mise en contrainte d'une zone de canal de transistor |
| US9362400B1 (en) | 2015-03-06 | 2016-06-07 | International Business Machines Corporation | Semiconductor device including dielectrically isolated finFETs and buried stressor |
| US10411128B1 (en) | 2018-05-22 | 2019-09-10 | International Business Machines Corporation | Strained fin channel devices |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6197641B1 (en) | 1998-08-28 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating vertical transistors |
| JP2002076334A (ja) * | 2000-08-30 | 2002-03-15 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JP3782021B2 (ja) * | 2002-02-22 | 2006-06-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、半導体基板の製造方法 |
| US6635909B2 (en) | 2002-03-19 | 2003-10-21 | International Business Machines Corporation | Strained fin FETs structure and method |
| CN1225799C (zh) * | 2002-04-24 | 2005-11-02 | 华邦电子股份有限公司 | 金属氧化物半导体场效应晶体管及其制造方法 |
| WO2003105189A2 (en) | 2002-06-07 | 2003-12-18 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| JP4546021B2 (ja) * | 2002-10-02 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型電界効果型トランジスタ及び半導体装置 |
| US6645797B1 (en) | 2002-12-06 | 2003-11-11 | Advanced Micro Devices, Inc. | Method for forming fins in a FinFET device using sacrificial carbon layer |
| US6806534B2 (en) * | 2003-01-14 | 2004-10-19 | International Business Machines Corporation | Damascene method for improved MOS transistor |
| US6815738B2 (en) | 2003-02-28 | 2004-11-09 | International Business Machines Corporation | Multiple gate MOSFET structure with strained Si Fin body |
| EP1602125B1 (en) * | 2003-03-07 | 2019-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Shallow trench isolation process |
| US6835618B1 (en) * | 2003-08-05 | 2004-12-28 | Advanced Micro Devices, Inc. | Epitaxially grown fin for FinFET |
| US6855583B1 (en) * | 2003-08-05 | 2005-02-15 | Advanced Micro Devices, Inc. | Method for forming tri-gate FinFET with mesa isolation |
| US6955969B2 (en) * | 2003-09-03 | 2005-10-18 | Advanced Micro Devices, Inc. | Method of growing as a channel region to reduce source/drain junction capacitance |
-
2004
- 2004-01-12 US US10/755,763 patent/US7138302B2/en not_active Expired - Lifetime
- 2004-12-21 DE DE112004002641T patent/DE112004002641B4/de not_active Expired - Lifetime
- 2004-12-21 CN CNB2004800403064A patent/CN100477126C/zh not_active Expired - Fee Related
- 2004-12-21 WO PCT/US2004/043106 patent/WO2005071728A1/en not_active Ceased
- 2004-12-21 DE DE602004006782T patent/DE602004006782T2/de not_active Expired - Lifetime
- 2004-12-21 KR KR1020067013878A patent/KR101065049B1/ko not_active Expired - Fee Related
- 2004-12-21 EP EP04815218A patent/EP1723668B1/en not_active Ceased
- 2004-12-21 JP JP2006549312A patent/JP2007518272A/ja active Pending
-
2005
- 2005-01-07 TW TW094100446A patent/TWI360197B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE602004006782T2 (de) | 2008-01-24 |
| CN100477126C (zh) | 2009-04-08 |
| EP1723668A1 (en) | 2006-11-22 |
| TW200529367A (en) | 2005-09-01 |
| WO2005071728A1 (en) | 2005-08-04 |
| KR101065049B1 (ko) | 2011-09-19 |
| DE112004002641T5 (de) | 2006-12-14 |
| US7138302B2 (en) | 2006-11-21 |
| US20050153486A1 (en) | 2005-07-14 |
| EP1723668B1 (en) | 2007-05-30 |
| JP2007518272A (ja) | 2007-07-05 |
| CN1902744A (zh) | 2007-01-24 |
| DE112004002641B4 (de) | 2009-01-02 |
| DE602004006782D1 (de) | 2007-07-12 |
| KR20060130098A (ko) | 2006-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |