DE602004006782D1 - Verfahren zur herstellung eines verspannten finfet-kanals - Google Patents
Verfahren zur herstellung eines verspannten finfet-kanalsInfo
- Publication number
- DE602004006782D1 DE602004006782D1 DE602004006782T DE602004006782T DE602004006782D1 DE 602004006782 D1 DE602004006782 D1 DE 602004006782D1 DE 602004006782 T DE602004006782 T DE 602004006782T DE 602004006782 T DE602004006782 T DE 602004006782T DE 602004006782 D1 DE602004006782 D1 DE 602004006782D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- finfet channel
- separate
- separate finfet
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US755763 | 2004-01-12 | ||
| US10/755,763 US7138302B2 (en) | 2004-01-12 | 2004-01-12 | Method of fabricating an integrated circuit channel region |
| PCT/US2004/043106 WO2005071728A1 (en) | 2004-01-12 | 2004-12-21 | Method of fabricating a strained finfet channel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE602004006782D1 true DE602004006782D1 (de) | 2007-07-12 |
| DE602004006782T2 DE602004006782T2 (de) | 2008-01-24 |
Family
ID=34739641
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112004002641T Active DE112004002641B4 (de) | 2004-01-12 | 2004-12-21 | Verfahren zur Herstellung eines verformten FinFET-Kanals |
| DE602004006782T Active DE602004006782T2 (de) | 2004-01-12 | 2004-12-21 | Verfahren zur herstellung eines verformten finfet-kanals |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112004002641T Active DE112004002641B4 (de) | 2004-01-12 | 2004-12-21 | Verfahren zur Herstellung eines verformten FinFET-Kanals |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7138302B2 (de) |
| EP (1) | EP1723668B1 (de) |
| JP (1) | JP2007518272A (de) |
| KR (1) | KR101065049B1 (de) |
| CN (1) | CN100477126C (de) |
| DE (2) | DE112004002641B4 (de) |
| TW (1) | TWI360197B (de) |
| WO (1) | WO2005071728A1 (de) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| KR100618852B1 (ko) * | 2004-07-27 | 2006-09-01 | 삼성전자주식회사 | 높은 동작 전류를 갖는 반도체 소자 |
| US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
| US7271448B2 (en) * | 2005-02-14 | 2007-09-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple gate field effect transistor structure |
| US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US7777250B2 (en) | 2006-03-24 | 2010-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures and related methods for device fabrication |
| US7365401B2 (en) * | 2006-03-28 | 2008-04-29 | International Business Machines Corporation | Dual-plane complementary metal oxide semiconductor |
| US8173551B2 (en) | 2006-09-07 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Defect reduction using aspect ratio trapping |
| WO2008039534A2 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures |
| WO2008039495A1 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Tri-gate field-effect transistors formed by aspect ratio trapping |
| WO2008051503A2 (en) | 2006-10-19 | 2008-05-02 | Amberwave Systems Corporation | Light-emitter-based devices with lattice-mismatched semiconductor structures |
| US7772048B2 (en) * | 2007-02-23 | 2010-08-10 | Freescale Semiconductor, Inc. | Forming semiconductor fins using a sacrificial fin |
| US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
| US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
| US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
| US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| JP2010538495A (ja) | 2007-09-07 | 2010-12-09 | アンバーウェーブ・システムズ・コーポレーション | 多接合太陽電池 |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
| US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
| US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
| US7872303B2 (en) * | 2008-08-14 | 2011-01-18 | International Business Machines Corporation | FinFET with longitudinal stress in a channel |
| CN102160145B (zh) | 2008-09-19 | 2013-08-21 | 台湾积体电路制造股份有限公司 | 通过外延层过成长的元件形成 |
| US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
| US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
| EP2415083B1 (de) | 2009-04-02 | 2017-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Aus einer nicht polaren ebene eines kristallinen materials geformte vorrichtungen und verfahren zu ihrer herstellung |
| JP5666961B2 (ja) * | 2011-03-31 | 2015-02-12 | 猛英 白土 | 半導体記憶装置 |
| JP5667017B2 (ja) * | 2011-09-03 | 2015-02-12 | 猛英 白土 | 半導体装置及びその製造方法 |
| FR3029011B1 (fr) | 2014-11-25 | 2018-04-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede ameliore de mise en contrainte d'une zone de canal de transistor |
| US9362400B1 (en) | 2015-03-06 | 2016-06-07 | International Business Machines Corporation | Semiconductor device including dielectrically isolated finFETs and buried stressor |
| US10411128B1 (en) | 2018-05-22 | 2019-09-10 | International Business Machines Corporation | Strained fin channel devices |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6197641B1 (en) | 1998-08-28 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating vertical transistors |
| JP2002076334A (ja) * | 2000-08-30 | 2002-03-15 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JP3782021B2 (ja) | 2002-02-22 | 2006-06-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、半導体基板の製造方法 |
| US6635909B2 (en) | 2002-03-19 | 2003-10-21 | International Business Machines Corporation | Strained fin FETs structure and method |
| US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| WO2003105189A2 (en) | 2002-06-07 | 2003-12-18 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| JP4546021B2 (ja) * | 2002-10-02 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型電界効果型トランジスタ及び半導体装置 |
| US6645797B1 (en) | 2002-12-06 | 2003-11-11 | Advanced Micro Devices, Inc. | Method for forming fins in a FinFET device using sacrificial carbon layer |
| US6806534B2 (en) * | 2003-01-14 | 2004-10-19 | International Business Machines Corporation | Damascene method for improved MOS transistor |
| US6815738B2 (en) | 2003-02-28 | 2004-11-09 | International Business Machines Corporation | Multiple gate MOSFET structure with strained Si Fin body |
| JP4585510B2 (ja) * | 2003-03-07 | 2010-11-24 | 台湾積體電路製造股▲ふん▼有限公司 | シャロートレンチアイソレーションプロセス |
| US6855583B1 (en) * | 2003-08-05 | 2005-02-15 | Advanced Micro Devices, Inc. | Method for forming tri-gate FinFET with mesa isolation |
| US6835618B1 (en) * | 2003-08-05 | 2004-12-28 | Advanced Micro Devices, Inc. | Epitaxially grown fin for FinFET |
| US6955969B2 (en) * | 2003-09-03 | 2005-10-18 | Advanced Micro Devices, Inc. | Method of growing as a channel region to reduce source/drain junction capacitance |
-
2004
- 2004-01-12 US US10/755,763 patent/US7138302B2/en not_active Expired - Lifetime
- 2004-12-21 CN CNB2004800403064A patent/CN100477126C/zh not_active Expired - Fee Related
- 2004-12-21 DE DE112004002641T patent/DE112004002641B4/de active Active
- 2004-12-21 WO PCT/US2004/043106 patent/WO2005071728A1/en active IP Right Grant
- 2004-12-21 DE DE602004006782T patent/DE602004006782T2/de active Active
- 2004-12-21 EP EP04815218A patent/EP1723668B1/de not_active Expired - Fee Related
- 2004-12-21 KR KR1020067013878A patent/KR101065049B1/ko not_active IP Right Cessation
- 2004-12-21 JP JP2006549312A patent/JP2007518272A/ja active Pending
-
2005
- 2005-01-07 TW TW094100446A patent/TWI360197B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1723668A1 (de) | 2006-11-22 |
| DE602004006782T2 (de) | 2008-01-24 |
| CN100477126C (zh) | 2009-04-08 |
| KR101065049B1 (ko) | 2011-09-19 |
| US7138302B2 (en) | 2006-11-21 |
| WO2005071728A1 (en) | 2005-08-04 |
| CN1902744A (zh) | 2007-01-24 |
| DE112004002641B4 (de) | 2009-01-02 |
| TWI360197B (en) | 2012-03-11 |
| DE112004002641T5 (de) | 2006-12-14 |
| KR20060130098A (ko) | 2006-12-18 |
| JP2007518272A (ja) | 2007-07-05 |
| EP1723668B1 (de) | 2007-05-30 |
| US20050153486A1 (en) | 2005-07-14 |
| TW200529367A (en) | 2005-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY |
|
| 8328 | Change in the person/name/address of the agent |
Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER, |