CN100477126C - 制造集成电路信道区域的方法 - Google Patents

制造集成电路信道区域的方法 Download PDF

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Publication number
CN100477126C
CN100477126C CNB2004800403064A CN200480040306A CN100477126C CN 100477126 C CN100477126 C CN 100477126C CN B2004800403064 A CNB2004800403064 A CN B2004800403064A CN 200480040306 A CN200480040306 A CN 200480040306A CN 100477126 C CN100477126 C CN 100477126C
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China
Prior art keywords
layer
semiconductor layer
fin
channel region
strain
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Expired - Fee Related
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CNB2004800403064A
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English (en)
Chinese (zh)
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CN1902744A (zh
Inventor
相奇
J·N·潘
丘政锡
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GlobalFoundries US Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB2004800403064A 2004-01-12 2004-12-21 制造集成电路信道区域的方法 Expired - Fee Related CN100477126C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/755,763 US7138302B2 (en) 2004-01-12 2004-01-12 Method of fabricating an integrated circuit channel region
US10/755,763 2004-01-12

Publications (2)

Publication Number Publication Date
CN1902744A CN1902744A (zh) 2007-01-24
CN100477126C true CN100477126C (zh) 2009-04-08

Family

ID=34739641

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800403064A Expired - Fee Related CN100477126C (zh) 2004-01-12 2004-12-21 制造集成电路信道区域的方法

Country Status (8)

Country Link
US (1) US7138302B2 (enExample)
EP (1) EP1723668B1 (enExample)
JP (1) JP2007518272A (enExample)
KR (1) KR101065049B1 (enExample)
CN (1) CN100477126C (enExample)
DE (2) DE112004002641B4 (enExample)
TW (1) TWI360197B (enExample)
WO (1) WO2005071728A1 (enExample)

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US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
KR100618852B1 (ko) * 2004-07-27 2006-09-01 삼성전자주식회사 높은 동작 전류를 갖는 반도체 소자
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US7271448B2 (en) * 2005-02-14 2007-09-18 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple gate field effect transistor structure
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
US7365401B2 (en) * 2006-03-28 2008-04-29 International Business Machines Corporation Dual-plane complementary metal oxide semiconductor
WO2008030574A1 (en) 2006-09-07 2008-03-13 Amberwave Systems Corporation Defect reduction using aspect ratio trapping
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US8502263B2 (en) 2006-10-19 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
US7772048B2 (en) * 2007-02-23 2010-08-10 Freescale Semiconductor, Inc. Forming semiconductor fins using a sacrificial fin
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
WO2009035746A2 (en) 2007-09-07 2009-03-19 Amberwave Systems Corporation Multi-junction solar cells
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US7872303B2 (en) * 2008-08-14 2011-01-18 International Business Machines Corporation FinFET with longitudinal stress in a channel
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
WO2010033813A2 (en) 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
JP5666961B2 (ja) * 2011-03-31 2015-02-12 猛英 白土 半導体記憶装置
JP5667017B2 (ja) * 2011-09-03 2015-02-12 猛英 白土 半導体装置及びその製造方法
FR3029011B1 (fr) * 2014-11-25 2018-04-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede ameliore de mise en contrainte d'une zone de canal de transistor
US9362400B1 (en) 2015-03-06 2016-06-07 International Business Machines Corporation Semiconductor device including dielectrically isolated finFETs and buried stressor
US10411128B1 (en) 2018-05-22 2019-09-10 International Business Machines Corporation Strained fin channel devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6197641B1 (en) * 1998-08-28 2001-03-06 Lucent Technologies Inc. Process for fabricating vertical transistors
US20030201458A1 (en) * 2002-03-19 2003-10-30 Clark William F. Strained fin fets structure and method
CN1453880A (zh) * 2002-04-24 2003-11-05 华邦电子股份有限公司 金氧半场效应晶体管及其制造方法
US6645797B1 (en) * 2002-12-06 2003-11-11 Advanced Micro Devices, Inc. Method for forming fins in a FinFET device using sacrificial carbon layer
US20030227036A1 (en) * 2002-02-22 2003-12-11 Naoharu Sugiyama Semiconductor device
WO2003105189A2 (en) * 2002-06-07 2003-12-18 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures

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JP2002076334A (ja) * 2000-08-30 2002-03-15 Hitachi Ltd 半導体装置及びその製造方法
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
JP4546021B2 (ja) * 2002-10-02 2010-09-15 ルネサスエレクトロニクス株式会社 絶縁ゲート型電界効果型トランジスタ及び半導体装置
US6806534B2 (en) * 2003-01-14 2004-10-19 International Business Machines Corporation Damascene method for improved MOS transistor
US6815738B2 (en) 2003-02-28 2004-11-09 International Business Machines Corporation Multiple gate MOSFET structure with strained Si Fin body
EP1602125B1 (en) * 2003-03-07 2019-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Shallow trench isolation process
US6835618B1 (en) * 2003-08-05 2004-12-28 Advanced Micro Devices, Inc. Epitaxially grown fin for FinFET
US6855583B1 (en) * 2003-08-05 2005-02-15 Advanced Micro Devices, Inc. Method for forming tri-gate FinFET with mesa isolation
US6955969B2 (en) * 2003-09-03 2005-10-18 Advanced Micro Devices, Inc. Method of growing as a channel region to reduce source/drain junction capacitance

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6197641B1 (en) * 1998-08-28 2001-03-06 Lucent Technologies Inc. Process for fabricating vertical transistors
US20030227036A1 (en) * 2002-02-22 2003-12-11 Naoharu Sugiyama Semiconductor device
US20030201458A1 (en) * 2002-03-19 2003-10-30 Clark William F. Strained fin fets structure and method
CN1453880A (zh) * 2002-04-24 2003-11-05 华邦电子股份有限公司 金氧半场效应晶体管及其制造方法
WO2003105189A2 (en) * 2002-06-07 2003-12-18 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US6645797B1 (en) * 2002-12-06 2003-11-11 Advanced Micro Devices, Inc. Method for forming fins in a FinFET device using sacrificial carbon layer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Fully-depleted strained-Si on insulator NMOSFETswithout relaxed SiGe buffers. Haizhou Yin, et al.Electron Devices Meeting, 2003. IEDM 03 Technical Digest. IEEE International. 2003 *
Strained FIP-SOI (finFET/FD/PD-SOI) for sub-65 nmCMOS scaling. Fu-Liang Yang, et al.VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on. 2003 *

Also Published As

Publication number Publication date
TWI360197B (en) 2012-03-11
DE602004006782T2 (de) 2008-01-24
EP1723668A1 (en) 2006-11-22
TW200529367A (en) 2005-09-01
WO2005071728A1 (en) 2005-08-04
KR101065049B1 (ko) 2011-09-19
DE112004002641T5 (de) 2006-12-14
US7138302B2 (en) 2006-11-21
US20050153486A1 (en) 2005-07-14
EP1723668B1 (en) 2007-05-30
JP2007518272A (ja) 2007-07-05
CN1902744A (zh) 2007-01-24
DE112004002641B4 (de) 2009-01-02
DE602004006782D1 (de) 2007-07-12
KR20060130098A (ko) 2006-12-18

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Patentee after: Lattice chip (USA) integrated circuit technology Co.,Ltd.

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