JP2008506617A5 - - Google Patents
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- Publication number
- JP2008506617A5 JP2008506617A5 JP2007520787A JP2007520787A JP2008506617A5 JP 2008506617 A5 JP2008506617 A5 JP 2008506617A5 JP 2007520787 A JP2007520787 A JP 2007520787A JP 2007520787 A JP2007520787 A JP 2007520787A JP 2008506617 A5 JP2008506617 A5 JP 2008506617A5
- Authority
- JP
- Japan
- Prior art keywords
- film deposition
- deposition method
- film
- raw material
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 claims description 40
- 238000002347 injection Methods 0.000 claims description 31
- 239000007924 injection Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 25
- 239000002994 raw material Substances 0.000 claims description 25
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000005049 silicon tetrachloride Substances 0.000 claims description 2
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 claims description 2
- GXMNGLIMQIPFEB-UHFFFAOYSA-N tetraethoxygermane Chemical compound CCO[Ge](OCC)(OCC)OCC GXMNGLIMQIPFEB-UHFFFAOYSA-N 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000002052 molecular layer Substances 0.000 claims 1
- 230000006911 nucleation Effects 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000011343 solid material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004034103A DE102004034103A1 (de) | 2003-09-17 | 2004-07-15 | Verfahren zur Abscheidung von Silizium und Germanium enthaltenen Schichten und Schichtfolgen unter Verwendung von nicht-kontinuierlicher Injektion von flüssigen und gelösten Ausgangssubstanzen über eine Mehrkanalinjektionseinheit |
| PCT/EP2005/050756 WO2006005637A1 (de) | 2004-07-15 | 2005-02-22 | Verfahren zur abscheidung von silizium und germanium enthaltenden schichten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008506617A JP2008506617A (ja) | 2008-03-06 |
| JP2008506617A5 true JP2008506617A5 (https=) | 2012-11-29 |
Family
ID=34961201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007520787A Pending JP2008506617A (ja) | 2004-07-15 | 2005-02-22 | ＳｉとＧｅを含有する膜の堆積方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1774056B1 (https=) |
| JP (1) | JP2008506617A (https=) |
| KR (1) | KR20070037503A (https=) |
| TW (1) | TWI390073B (https=) |
| WO (1) | WO2006005637A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101106480B1 (ko) * | 2009-06-12 | 2012-01-20 | 한국철강 주식회사 | 광기전력 장치의 제조 방법 |
| JP5650234B2 (ja) * | 2009-11-16 | 2015-01-07 | エフ・イ−・アイ・カンパニー | ビーム処理システムに対するガス送達 |
| WO2017051775A1 (ja) * | 2015-09-24 | 2017-03-30 | 東洋アルミニウム株式会社 | ペースト組成物及びシリコンゲルマニウム層の形成方法 |
| US11830734B2 (en) | 2021-05-19 | 2023-11-28 | Applied Materials, Inc. | Thermal deposition of silicon-germanium |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8702096A (nl) * | 1987-09-04 | 1989-04-03 | Stichting Katholieke Univ | Werkwijze en inrichting voor het mengen van gassen en het met behulp van een gasmengsel epitactisch vervaardigen van halfgeleiderproducten. |
| JP3149223B2 (ja) * | 1991-10-07 | 2001-03-26 | 東京エレクトロン株式会社 | 成膜方法 |
| US6306211B1 (en) * | 1999-03-23 | 2001-10-23 | Matsushita Electric Industrial Co., Ltd. | Method for growing semiconductor film and method for fabricating semiconductor device |
| DE10007059A1 (de) * | 2000-02-16 | 2001-08-23 | Aixtron Ag | Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung |
| JP5016767B2 (ja) * | 2000-03-07 | 2012-09-05 | エーエスエム インターナショナル エヌ．ヴェー． | 傾斜薄膜の形成方法 |
| DE10057491A1 (de) * | 2000-11-20 | 2002-05-23 | Aixtron Ag | Vorrichtung und Verfahren zum Zuführen eines in die Gasform gebrachten flüssigen Ausgangsstoffes in einen CVD-Reaktor |
| JP2002175987A (ja) * | 2000-12-05 | 2002-06-21 | Ngk Insulators Ltd | 液体原料供給装置 |
| DE10114956C2 (de) * | 2001-03-27 | 2003-06-18 | Infineon Technologies Ag | Verfahren zum Herstellen einer dielektrischen Schicht als Isolatorschicht für einen Grabenkondensator |
| JP3985519B2 (ja) * | 2001-12-27 | 2007-10-03 | 株式会社Ｓｕｍｃｏ | 半導体基板及び電界効果型トランジスタ並びにこれらの製造方法 |
| DE10156932A1 (de) * | 2001-11-20 | 2003-05-28 | Infineon Technologies Ag | Verfahren zur Abscheidung dünner Praseodymoxid-Schichten mittels ALD/CVD-Verfahren |
| US20030111013A1 (en) * | 2001-12-19 | 2003-06-19 | Oosterlaken Theodorus Gerardus Maria | Method for the deposition of silicon germanium layers |
| JP3719998B2 (ja) * | 2002-04-01 | 2005-11-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| GB0212616D0 (en) * | 2002-05-31 | 2002-07-10 | Univ Warwick | Formation of lattice-tuning semiconductor substrates |
| JP2004039735A (ja) * | 2002-07-01 | 2004-02-05 | Fujitsu Ltd | 半導体基板及びその製造方法 |
| JP4195808B2 (ja) * | 2002-11-05 | 2008-12-17 | 日本パイオニクス株式会社 | 気化器 |
| JP2004179649A (ja) * | 2002-11-12 | 2004-06-24 | Sony Corp | 超薄型半導体装置の製造方法および製造装置 |
| JP4714422B2 (ja) * | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置 |
-
2005
- 2005-02-22 EP EP05716765A patent/EP1774056B1/de not_active Expired - Lifetime
- 2005-02-22 KR KR1020077002899A patent/KR20070037503A/ko not_active Ceased
- 2005-02-22 JP JP2007520787A patent/JP2008506617A/ja active Pending
- 2005-02-22 WO PCT/EP2005/050756 patent/WO2006005637A1/de not_active Ceased
- 2005-03-15 TW TW094107777A patent/TWI390073B/zh not_active IP Right Cessation
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