JP2008506617A - ＳｉとＧｅを含有する膜の堆積方法 - Google Patents

ＳｉとＧｅを含有する膜の堆積方法 Download PDF

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Publication number
JP2008506617A
JP2008506617A JP2007520787A JP2007520787A JP2008506617A JP 2008506617 A JP2008506617 A JP 2008506617A JP 2007520787 A JP2007520787 A JP 2007520787A JP 2007520787 A JP2007520787 A JP 2007520787A JP 2008506617 A JP2008506617 A JP 2008506617A
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JP
Japan
Prior art keywords
film
raw material
deposited
film deposition
injection
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Pending
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JP2007520787A
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English (en)
Japanese (ja)
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JP2008506617A5 (https=
Inventor
シュマッハー、マルクス
バウマン、ペータ
リンドナー、ヨハネス
マッケンティー、ティモシー
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アイクストロン、アーゲー
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Priority claimed from DE102004034103A external-priority patent/DE102004034103A1/de
Application filed by アイクストロン、アーゲー filed Critical アイクストロン、アーゲー
Publication of JP2008506617A publication Critical patent/JP2008506617A/ja
Publication of JP2008506617A5 publication Critical patent/JP2008506617A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2007520787A 2004-07-15 2005-02-22 ＳｉとＧｅを含有する膜の堆積方法 Pending JP2008506617A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004034103A DE102004034103A1 (de) 2003-09-17 2004-07-15 Verfahren zur Abscheidung von Silizium und Germanium enthaltenen Schichten und Schichtfolgen unter Verwendung von nicht-kontinuierlicher Injektion von flüssigen und gelösten Ausgangssubstanzen über eine Mehrkanalinjektionseinheit
PCT/EP2005/050756 WO2006005637A1 (de) 2004-07-15 2005-02-22 Verfahren zur abscheidung von silizium und germanium enthaltenden schichten

Publications (2)

Publication Number Publication Date
JP2008506617A true JP2008506617A (ja) 2008-03-06
JP2008506617A5 JP2008506617A5 (https=) 2012-11-29

Family

ID=34961201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007520787A Pending JP2008506617A (ja) 2004-07-15 2005-02-22 ＳｉとＧｅを含有する膜の堆積方法

Country Status (5)

Country Link
EP (1) EP1774056B1 (https=)
JP (1) JP2008506617A (https=)
KR (1) KR20070037503A (https=)
TW (1) TWI390073B (https=)
WO (1) WO2006005637A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101106480B1 (ko) * 2009-06-12 2012-01-20 한국철강 주식회사 광기전력 장치의 제조 방법
JP5650234B2 (ja) * 2009-11-16 2015-01-07 エフ・イ−・アイ・カンパニー ビーム処理システムに対するガス送達
WO2017051775A1 (ja) * 2015-09-24 2017-03-30 東洋アルミニウム株式会社 ペースト組成物及びシリコンゲルマニウム層の形成方法
US11830734B2 (en) 2021-05-19 2023-11-28 Applied Materials, Inc. Thermal deposition of silicon-germanium

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102040A (ja) * 1991-10-07 1993-04-23 Tokyo Electron Ltd 成膜方法
WO2002040739A1 (de) * 2000-11-20 2002-05-23 Aixtron Ag Vorrichtung und verfahren zum zuführen eines in die gasform gebrachten flüssigen ausgangsstoffes in einen cvd-reaktor
JP2002175987A (ja) * 2000-12-05 2002-06-21 Ngk Insulators Ltd 液体原料供給装置
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
JP2003197544A (ja) * 2001-12-27 2003-07-11 Sumitomo Mitsubishi Silicon Corp 半導体基板及び電界効果型トランジスタ並びにこれらの製造方法
JP2003522839A (ja) * 2000-02-16 2003-07-29 アイクストロン、アーゲー 凝縮被膜生成法
JP2003297847A (ja) * 2002-04-01 2003-10-17 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2004039735A (ja) * 2002-07-01 2004-02-05 Fujitsu Ltd 半導体基板及びその製造方法
JP2004158543A (ja) * 2002-11-05 2004-06-03 Japan Pionics Co Ltd 気化器
JP2004179649A (ja) * 2002-11-12 2004-06-24 Sony Corp 超薄型半導体装置の製造方法および製造装置
JP2004349684A (ja) * 2003-04-05 2004-12-09 Rohm & Haas Electronic Materials Llc ゲルマニウム化合物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8702096A (nl) * 1987-09-04 1989-04-03 Stichting Katholieke Univ Werkwijze en inrichting voor het mengen van gassen en het met behulp van een gasmengsel epitactisch vervaardigen van halfgeleiderproducten.
US6306211B1 (en) * 1999-03-23 2001-10-23 Matsushita Electric Industrial Co., Ltd. Method for growing semiconductor film and method for fabricating semiconductor device
JP5016767B2 (ja) * 2000-03-07 2012-09-05 エーエスエム インターナショナル エヌ．ヴェー． 傾斜薄膜の形成方法
DE10114956C2 (de) * 2001-03-27 2003-06-18 Infineon Technologies Ag Verfahren zum Herstellen einer dielektrischen Schicht als Isolatorschicht für einen Grabenkondensator
DE10156932A1 (de) * 2001-11-20 2003-05-28 Infineon Technologies Ag Verfahren zur Abscheidung dünner Praseodymoxid-Schichten mittels ALD/CVD-Verfahren
GB0212616D0 (en) * 2002-05-31 2002-07-10 Univ Warwick Formation of lattice-tuning semiconductor substrates

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102040A (ja) * 1991-10-07 1993-04-23 Tokyo Electron Ltd 成膜方法
JP2003522839A (ja) * 2000-02-16 2003-07-29 アイクストロン、アーゲー 凝縮被膜生成法
WO2002040739A1 (de) * 2000-11-20 2002-05-23 Aixtron Ag Vorrichtung und verfahren zum zuführen eines in die gasform gebrachten flüssigen ausgangsstoffes in einen cvd-reaktor
JP2002175987A (ja) * 2000-12-05 2002-06-21 Ngk Insulators Ltd 液体原料供給装置
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
JP2003197544A (ja) * 2001-12-27 2003-07-11 Sumitomo Mitsubishi Silicon Corp 半導体基板及び電界効果型トランジスタ並びにこれらの製造方法
JP2003297847A (ja) * 2002-04-01 2003-10-17 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2004039735A (ja) * 2002-07-01 2004-02-05 Fujitsu Ltd 半導体基板及びその製造方法
JP2004158543A (ja) * 2002-11-05 2004-06-03 Japan Pionics Co Ltd 気化器
JP2004179649A (ja) * 2002-11-12 2004-06-24 Sony Corp 超薄型半導体装置の製造方法および製造装置
JP2004349684A (ja) * 2003-04-05 2004-12-09 Rohm & Haas Electronic Materials Llc ゲルマニウム化合物

Also Published As

Publication number Publication date
TWI390073B (zh) 2013-03-21
KR20070037503A (ko) 2007-04-04
EP1774056B1 (de) 2011-05-18
WO2006005637A1 (de) 2006-01-19
TW200602514A (en) 2006-01-16
EP1774056A1 (de) 2007-04-18

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