JP2008504443A - 高品質化合物半導体材料を製造するための成膜方法 - Google Patents
高品質化合物半導体材料を製造するための成膜方法 Download PDFInfo
- Publication number
- JP2008504443A JP2008504443A JP2007518683A JP2007518683A JP2008504443A JP 2008504443 A JP2008504443 A JP 2008504443A JP 2007518683 A JP2007518683 A JP 2007518683A JP 2007518683 A JP2007518683 A JP 2007518683A JP 2008504443 A JP2008504443 A JP 2008504443A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- growth
- heating device
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 102
- 238000000034 method Methods 0.000 claims abstract description 62
- 238000010438 heat treatment Methods 0.000 claims abstract description 47
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 43
- 238000009792 diffusion process Methods 0.000 claims abstract description 30
- 238000005192 partition Methods 0.000 claims abstract description 24
- 239000002243 precursor Substances 0.000 claims abstract description 22
- 238000010926 purge Methods 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims description 150
- 230000015572 biosynthetic process Effects 0.000 claims description 33
- 238000002156 mixing Methods 0.000 claims description 33
- 229910052594 sapphire Inorganic materials 0.000 claims description 22
- 239000010980 sapphire Substances 0.000 claims description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 21
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 21
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000003786 synthesis reaction Methods 0.000 claims description 13
- 238000011065 in-situ storage Methods 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 229910052582 BN Inorganic materials 0.000 claims description 9
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910010093 LiAlO Inorganic materials 0.000 claims description 2
- 229910020068 MgAl Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 19
- 230000008021 deposition Effects 0.000 abstract description 18
- 230000007547 defect Effects 0.000 abstract description 7
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 26
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 230000003071 parasitic effect Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- 239000003153 chemical reaction reagent Substances 0.000 description 8
- 230000032258 transport Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- -1 nitride compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【選択図】図4
Description
本発明は以下の実施例を参照することによりさらに完全に理解されるだろう。
Claims (24)
- 材料層を基板の表面に形成するための化学気相成長方法であって、延長拡散層と、均一化隔壁と、独立した側壁ガス加熱装置及び基板加熱装置と、円筒状の側壁ガスパージラインと、円筒状の側壁ガス出口スリットとを有する円筒状の縦型ハイドライド気相エピタキシー(HVPE)成長反応器を使用することを含む方法。
- 請求項1において、前記材料層がIII−V族またはVI族材料を含む方法。
- 請求項1又は2において、前記基板の前記表面に成膜される前記材料層が時間変調成長法によって設けられ、制御された成長モード(横方向又は縦方向)及び成膜された材料のin situエッチング及びアニールのために異なる反応性ガスを切り替えることができる方法。
- 請求項1〜3のいずれか1項において、前記成長反応器が対向方向流れ配置を使用する方法。
- 請求項1〜4のいずれか1項において、前記隔壁が前記基板の有効直径に近い直径を有する方法。
- 請求項1〜5のいずれか1項において、前記成長反応器が成膜均一性を高めるための混合室と混合板とを有する方法。
- 請求項1〜6のいずれか1項において、前記延長拡散層が前記基板の有効直径よりも大きな長さを有する方法。
- 請求項1〜7のいずれか1項において、前記成長反応器がin situガス前駆体合成領域を有する方法。
- 請求項1〜8のいずれか1項において、前記ガス加熱装置がマルチゾーン加熱装置を含む方法。
- 請求項1〜9のいずれか1項において、前記基板が、サファイア、炭化ケイ素、シリコン、GaAs、GaN被覆サファイア、GaN、AlN、ZnO、NdGaO3、MgAl2O4、LiAlO2、LiGaO2からなる群から選択される材料を含む部材を含む方法。
- 請求項1〜10のいずれか1項において、前記成長反応器が、石英、サファイア、窒化ホウ素、窒化アルミニウム、炭化ケイ素、炭化ケイ素被覆グラファイト、ステンレス鋼の少なくとも1つで形成されている方法。
- 請求項1〜11のいずれか1項において、前記成長反応器内で前記基板をガスパージ又はモーターを使用して回転させる方法。
- 請求項6又は請求項6に従属する請求項7〜12のいずれか1項において、前記混合板が前記基板の有効直径の1/20未満の直径を有する穴を有する方法。
- 請求項6又は13又は請求項6に従属する請求項7〜12のいずれか1項において、前記混合板が、石英、サファイア、窒化ホウ素、窒化アルミニウム、炭化ケイ素、炭化ケイ素被覆グラファイトの少なくとも1つで形成されている方法。
- 材料層を基板の表面に形成するための化学気相成長装置であって、延長拡散層と、均一化隔壁と、独立した側壁ガス加熱装置及び基板加熱装置と、円筒状の側壁ガスパージラインと、円筒状の側壁ガス出口スリットとを有する円筒状の縦型ハイドライド気相エピタキシー(HVPE)成長反応器を含む装置。
- 請求項15において、前記成長反応器が対向方向流れ配置を使用する装置。
- 請求項15又は16において、前記隔壁が前記基板の有効直径に近い直径を有する装置。
- 請求項15〜17のいずれか1項において、前記成長反応器が成膜均一性を高めるための混合室と混合板とを有する装置。
- 請求項15〜18のいずれか1項において、前記延長拡散層が前記基板の有効直径よりも大きな長さを有する装置。
- 請求項15〜19のいずれか1項において、前記成長反応器がin situガス前駆体合成領域を有する装置。
- 請求項15〜20のいずれか1項において、前記ガス加熱装置がマルチゾーン加熱装置を含む装置。
- 請求項15〜21のいずれか1項において、前記成長反応器が、石英、サファイア、窒化ホウ素、窒化アルミニウム、炭化ケイ素、炭化ケイ素被覆グラファイト、ステンレス鋼の少なくとも1つで形成されている装置。
- 請求項15〜22のいずれか1項において、ガスパージ又はモーターを使用して前記成長反応器内で前記基板を回転させる手段を含む装置。
- 請求項18又は請求項18に従属する請求項19〜23のいずれか1項において、前記混合板が、石英、サファイア、窒化ホウ素、窒化アルミニウム、炭化ケイ素、炭化ケイ素被覆グラファイトの少なくとも1つで形成されている装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0414607A GB2415707A (en) | 2004-06-30 | 2004-06-30 | Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm |
PCT/GB2005/002529 WO2006003381A1 (en) | 2004-06-30 | 2005-06-27 | Deposition technique for producing high quality compound semiconductor materials |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008504443A true JP2008504443A (ja) | 2008-02-14 |
Family
ID=32843282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007518683A Pending JP2008504443A (ja) | 2004-06-30 | 2005-06-27 | 高品質化合物半導体材料を製造するための成膜方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7906411B2 (ja) |
EP (1) | EP1779411A1 (ja) |
JP (1) | JP2008504443A (ja) |
KR (1) | KR101201589B1 (ja) |
CN (1) | CN100547721C (ja) |
GB (1) | GB2415707A (ja) |
WO (1) | WO2006003381A1 (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010520135A (ja) * | 2007-03-02 | 2010-06-10 | フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | 気相エピタキシーを用いた半導体複合材料の製造方法および装置 |
JP2010222232A (ja) * | 2009-02-26 | 2010-10-07 | Kyocera Corp | 単結晶体、単結晶基板、ならびに単結晶体の製造方法および製造装置 |
JP2012504866A (ja) * | 2008-10-03 | 2012-02-23 | ビーコ・インストゥルメンツ・インコーポレイテッド | 化学蒸着堆積のための方法および装置 |
WO2012115170A1 (ja) * | 2011-02-24 | 2012-08-30 | 株式会社日立国際電気 | 基板処理装置、基板の製造方法及び半導体装置の製造方法 |
JP2012246195A (ja) * | 2011-05-30 | 2012-12-13 | Hitachi Cable Ltd | 半絶縁性窒化物半導体ウエハ、半絶縁性窒化物半導体自立基板及びトランジスタ、並びに半絶縁性窒化物半導体層の成長方法及び成長装置 |
JP2014207459A (ja) * | 2006-06-09 | 2014-10-30 | ソイテック | 三塩化ガリウムを製造するための大容量送達方法 |
WO2019059009A1 (ja) * | 2017-09-25 | 2019-03-28 | 国立大学法人名古屋大学 | 気相成長装置 |
JP2019059636A (ja) * | 2017-09-25 | 2019-04-18 | 国立大学法人名古屋大学 | 気相成長装置 |
KR20190097585A (ko) * | 2018-02-12 | 2019-08-21 | 전주대학교 산학협력단 | Hvpe반응기 |
JP2019196293A (ja) * | 2018-05-11 | 2019-11-14 | 国立大学法人名古屋大学 | 気相成長装置 |
US11186922B2 (en) | 2019-06-06 | 2021-11-30 | Panasonic Corporation | Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions |
KR20230067962A (ko) * | 2021-11-10 | 2023-05-17 | 신정훈 | 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비 |
KR20230067961A (ko) * | 2021-11-10 | 2023-05-17 | 신정훈 | 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비 |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4395609B2 (ja) * | 2006-03-13 | 2010-01-13 | 国立大学法人東北大学 | 窒化ガリウム系材料からなる基板 |
JP4187175B2 (ja) * | 2006-03-13 | 2008-11-26 | 国立大学法人東北大学 | 窒化ガリウム系材料の製造方法 |
GB2436398B (en) * | 2006-03-23 | 2011-08-24 | Univ Bath | Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
KR100718118B1 (ko) * | 2006-06-01 | 2007-05-14 | 삼성코닝 주식회사 | 크랙이 없는 GaN 벌크 단결정의 성장 방법 및 장치 |
WO2008029589A1 (fr) | 2006-09-08 | 2008-03-13 | Tokuyama Corporation | Procédé et matériel servant à produire un nitrure d'un élément du groupe iii |
JP4959468B2 (ja) * | 2006-09-08 | 2012-06-20 | 株式会社トクヤマ | Iii族窒化物の製造方法およびその装置 |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
FR2930562B1 (fr) * | 2008-04-28 | 2010-06-04 | Acerde | Reacteur et procede de depot contre un subtrat d'un materiau issu de la decomposition d'un gaz |
CN101383279B (zh) * | 2008-10-21 | 2012-01-04 | 中国电子科技集团公司第四十六研究所 | 一种用于制备氮化物半导体衬底的hvpe反应器 |
US8568529B2 (en) * | 2009-04-10 | 2013-10-29 | Applied Materials, Inc. | HVPE chamber hardware |
US20110104843A1 (en) * | 2009-07-31 | 2011-05-05 | Applied Materials, Inc. | Method of reducing degradation of multi quantum well (mqw) light emitting diodes |
CN102465335B (zh) * | 2010-11-18 | 2014-07-16 | 南京大学 | 一种用于半导体材料热壁外延生长系统的加热装置 |
CN102465333B (zh) * | 2010-11-18 | 2015-04-15 | 南京大学 | 一种立式氢化物气相外延生长系统 |
JP5689294B2 (ja) * | 2010-11-25 | 2015-03-25 | 東京エレクトロン株式会社 | 処理装置 |
DE102011002146B4 (de) * | 2011-04-18 | 2023-03-09 | Aixtron Se | Vorrichtung und Verfahren zum Abscheiden von Halbleiterschichten mit HCI-Zugabe zur Unterdrückung parasitären Wachstums |
DE102011002145B4 (de) * | 2011-04-18 | 2023-02-09 | Aixtron Se | Vorrichtung und Verfahren zum großflächigen Abscheiden von Halbleiterschichten mit gasgetrennter HCI-Einspeisung |
WO2014031119A1 (en) * | 2012-08-23 | 2014-02-27 | National University Corporation Tokyo University Of Agriculture And Technology | Highly transparent aluminum nitride single crystalline layers and devices made therefrom |
EP2951869A1 (en) | 2013-01-29 | 2015-12-09 | Hexatech Inc. | Optoelectronic devices incorporating single crystalline aluminum nitride substrate |
WO2014159954A1 (en) | 2013-03-14 | 2014-10-02 | Hexatech, Inc. | Power semiconductor devices incorporating single crystalline aluminum nitride substrate |
CN103541000B (zh) * | 2013-11-06 | 2016-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种制备氮化硼单晶的装置及方法 |
CN104152859A (zh) * | 2014-08-11 | 2014-11-19 | 江南石墨烯研究院 | 一种在真空中以多面加热来构筑恒温区域的方式 |
DE102015101462A1 (de) * | 2015-02-02 | 2016-08-04 | Aixtron Se | Verfahren und Vorrichtung zum Abscheiden einer III-V-Halbleiterschicht |
US10290762B2 (en) * | 2015-06-18 | 2019-05-14 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Metal oxide film formation method |
CN106381523A (zh) * | 2016-09-08 | 2017-02-08 | 南京大学 | 一种立式氢化物气相外延生长系统 |
CN106987899B (zh) * | 2016-10-31 | 2021-08-31 | 姜全忠 | 使用气相传输的材料生长装置、生长方法以及检测装置 |
KR102636427B1 (ko) * | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
JP7242979B2 (ja) * | 2018-12-17 | 2023-03-22 | 株式会社レゾナック | SiCエピタキシャル成長装置 |
SG11202112722UA (en) * | 2019-06-06 | 2021-12-30 | Picosun Oy | Substrate processing methods and apparatus |
CN110205609B (zh) * | 2019-06-14 | 2022-11-04 | 清华-伯克利深圳学院筹备办公室 | 一种二维材料及其制备方法、制备装置及用途 |
CN111893456A (zh) * | 2020-07-09 | 2020-11-06 | 清华-伯克利深圳学院筹备办公室 | 二维过渡金属硫族化合物及其制备方法和器件 |
WO2022133943A1 (zh) * | 2020-12-24 | 2022-06-30 | 华为技术有限公司 | 反应器及生长装置 |
CN113201726B (zh) * | 2021-04-30 | 2023-05-23 | 浙江大学杭州国际科创中心 | 一种二维材料制备方法 |
CN113445129A (zh) * | 2021-06-21 | 2021-09-28 | 无锡吴越半导体有限公司 | 一种防止工艺气体回流的气相外延反应腔结构 |
CN115613139B (zh) * | 2022-12-01 | 2023-04-14 | 浙江晶越半导体有限公司 | 用于外延生长碳化硅薄膜的化学气相沉积反应器及方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002100571A (ja) * | 2000-09-22 | 2002-04-05 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2004063631A (ja) * | 2002-07-26 | 2004-02-26 | Nippon Sanso Corp | 気相成長装置 |
TW589396B (en) * | 2003-01-07 | 2004-06-01 | Arima Optoelectronics Corp | Chemical vapor deposition reactor |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5982731A (ja) * | 1982-11-04 | 1984-05-12 | Toshiba Corp | ウエハ水蒸気酸化装置 |
US4574093A (en) | 1983-12-30 | 1986-03-04 | At&T Bell Laboratories | Deposition technique |
US4997677A (en) * | 1987-08-31 | 1991-03-05 | Massachusetts Institute Of Technology | Vapor phase reactor for making multilayer structures |
US4979465A (en) * | 1989-04-03 | 1990-12-25 | Daidousanso Co., Ltd. | Apparatus for producing semiconductors |
JPH0394069A (ja) * | 1989-09-05 | 1991-04-18 | Mitsubishi Electric Corp | 薄膜形成装置 |
TW456052B (en) | 1995-11-14 | 2001-09-21 | Sumitomo Chemical Co | Process for producing group III-V compound semiconductor |
JPH111399A (ja) | 1996-12-05 | 1999-01-06 | Lg Electron Inc | 窒化ガリウム半導体単結晶基板の製造方法並びにその基板を用いた窒化ガリウムダイオード |
US6037241A (en) * | 1998-02-19 | 2000-03-14 | First Solar, Llc | Apparatus and method for depositing a semiconductor material |
US6086673A (en) | 1998-04-02 | 2000-07-11 | Massachusetts Institute Of Technology | Process for producing high-quality III-V nitride substrates |
KR100267885B1 (ko) | 1998-05-18 | 2000-11-01 | 서성기 | 반도체 박막증착장치 |
US6218280B1 (en) | 1998-06-18 | 2001-04-17 | University Of Florida | Method and apparatus for producing group-III nitrides |
US6179913B1 (en) | 1999-04-16 | 2001-01-30 | Cbl Technologies, Inc. | Compound gas injection system and methods |
US6176925B1 (en) | 1999-05-07 | 2001-01-23 | Cbl Technologies, Inc. | Detached and inverted epitaxial regrowth & methods |
DE10064944A1 (de) * | 2000-09-22 | 2002-04-11 | Aixtron Ag | Verfahren zum Abscheiden von insbesondere kristallinen Schichten, Gaseinlassorgan sowie Vorrichtung zur Durchführung des Verfahrens |
DE10301949A1 (de) * | 2003-01-20 | 2004-07-29 | Siced Electronics Development Gmbh & Co. Kg | CVD-Reaktor mit homogenisierendem Gaseinlass und Verwendung des CVD-Reaktors |
-
2004
- 2004-06-30 GB GB0414607A patent/GB2415707A/en not_active Withdrawn
-
2005
- 2005-06-27 CN CNB2005800222044A patent/CN100547721C/zh active Active
- 2005-06-27 JP JP2007518683A patent/JP2008504443A/ja active Pending
- 2005-06-27 KR KR1020077001308A patent/KR101201589B1/ko active IP Right Grant
- 2005-06-27 EP EP05755392A patent/EP1779411A1/en not_active Ceased
- 2005-06-27 WO PCT/GB2005/002529 patent/WO2006003381A1/en active Application Filing
- 2005-06-27 US US11/571,514 patent/US7906411B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002100571A (ja) * | 2000-09-22 | 2002-04-05 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2004063631A (ja) * | 2002-07-26 | 2004-02-26 | Nippon Sanso Corp | 気相成長装置 |
TW589396B (en) * | 2003-01-07 | 2004-06-01 | Arima Optoelectronics Corp | Chemical vapor deposition reactor |
US20040129213A1 (en) * | 2003-01-07 | 2004-07-08 | Shreter Yury Georgievich | Chemical vapor deposition reactor |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014207459A (ja) * | 2006-06-09 | 2014-10-30 | ソイテック | 三塩化ガリウムを製造するための大容量送達方法 |
JP2010520135A (ja) * | 2007-03-02 | 2010-06-10 | フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | 気相エピタキシーを用いた半導体複合材料の製造方法および装置 |
US9074297B2 (en) | 2007-03-02 | 2015-07-07 | Freiberger Compound Materials Gmbh | Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy |
US9856579B2 (en) | 2007-03-02 | 2018-01-02 | Freiberger Compound Materials Gmbh | Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy |
JP2012504866A (ja) * | 2008-10-03 | 2012-02-23 | ビーコ・インストゥルメンツ・インコーポレイテッド | 化学蒸着堆積のための方法および装置 |
JP2010222232A (ja) * | 2009-02-26 | 2010-10-07 | Kyocera Corp | 単結晶体、単結晶基板、ならびに単結晶体の製造方法および製造装置 |
WO2012115170A1 (ja) * | 2011-02-24 | 2012-08-30 | 株式会社日立国際電気 | 基板処理装置、基板の製造方法及び半導体装置の製造方法 |
JP5677563B2 (ja) * | 2011-02-24 | 2015-02-25 | 株式会社日立国際電気 | 基板処理装置、基板の製造方法及び半導体装置の製造方法 |
US9082694B2 (en) | 2011-02-24 | 2015-07-14 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method for manufacturing substrate, and method for manufacturing semiconductor device |
JP2012246195A (ja) * | 2011-05-30 | 2012-12-13 | Hitachi Cable Ltd | 半絶縁性窒化物半導体ウエハ、半絶縁性窒化物半導体自立基板及びトランジスタ、並びに半絶縁性窒化物半導体層の成長方法及び成長装置 |
US11591717B2 (en) | 2017-09-25 | 2023-02-28 | National University Corporation Nagoya University | Vapor phase epitaxial growth device |
JP7002722B2 (ja) | 2017-09-25 | 2022-02-04 | 国立大学法人東海国立大学機構 | 気相成長装置 |
US12009206B2 (en) | 2017-09-25 | 2024-06-11 | National University Corporation Nagoya University | Vapor phase epitaxial growth device |
WO2019059009A1 (ja) * | 2017-09-25 | 2019-03-28 | 国立大学法人名古屋大学 | 気相成長装置 |
JP2019059636A (ja) * | 2017-09-25 | 2019-04-18 | 国立大学法人名古屋大学 | 気相成長装置 |
KR102165760B1 (ko) * | 2018-02-12 | 2020-10-14 | 전주대학교 산학협력단 | Hvpe반응기 |
KR20190097585A (ko) * | 2018-02-12 | 2019-08-21 | 전주대학교 산학협력단 | Hvpe반응기 |
JP7002731B2 (ja) | 2018-05-11 | 2022-01-20 | 国立大学法人東海国立大学機構 | 気相成長装置 |
JP2019196293A (ja) * | 2018-05-11 | 2019-11-14 | 国立大学法人名古屋大学 | 気相成長装置 |
US11186922B2 (en) | 2019-06-06 | 2021-11-30 | Panasonic Corporation | Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions |
KR20230067962A (ko) * | 2021-11-10 | 2023-05-17 | 신정훈 | 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비 |
KR20230067961A (ko) * | 2021-11-10 | 2023-05-17 | 신정훈 | 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비 |
KR102536978B1 (ko) | 2021-11-10 | 2023-05-26 | 신정훈 | 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비 |
KR102536979B1 (ko) | 2021-11-10 | 2023-05-26 | 신정훈 | 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비 |
Also Published As
Publication number | Publication date |
---|---|
US20080132040A1 (en) | 2008-06-05 |
WO2006003381A1 (en) | 2006-01-12 |
EP1779411A1 (en) | 2007-05-02 |
KR20070049630A (ko) | 2007-05-11 |
CN101006548A (zh) | 2007-07-25 |
GB0414607D0 (en) | 2004-08-04 |
CN100547721C (zh) | 2009-10-07 |
US7906411B2 (en) | 2011-03-15 |
KR101201589B1 (ko) | 2012-11-14 |
GB2415707A (en) | 2006-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2008504443A (ja) | 高品質化合物半導体材料を製造するための成膜方法 | |
JP4537484B2 (ja) | 高品質化合物半導体材料を製造するためのナノ構造適応層及びhvpeを使用する成長法 | |
US9177799B2 (en) | Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate | |
EP2083935B1 (en) | Method for epitaxial deposition of a monocrystalline Group III-V semiconductor material | |
EP2066496B1 (en) | Equipment for high volume manufacture of group iii-v semiconductor materials | |
US6559039B2 (en) | Doped silicon deposition process in resistively heated single wafer chamber | |
US20030049372A1 (en) | High rate deposition at low pressures in a small batch reactor | |
US8491720B2 (en) | HVPE precursor source hardware | |
JP2012525713A (ja) | Led向けのクラスタツール | |
TW201246297A (en) | Metal-organic vapor phase epitaxy system and process | |
US9023721B2 (en) | Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods | |
KR101030422B1 (ko) | 서셉터 | |
CN103221586B (zh) | 在金属氮化物生长模板层上形成块状iii族氮化物材料的方法以及由所述方法形成的结构体 | |
TW201443302A (zh) | 低碳第iii族氮化物結晶 | |
US20120227667A1 (en) | Substrate carrier with multiple emissivity coefficients for thin film processing | |
US10249493B2 (en) | Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber | |
JP4959468B2 (ja) | Iii族窒化物の製造方法およびその装置 | |
TW201214525A (en) | Group III-nitride N-type doping | |
JP2012180231A (ja) | 窒化物半導体単結晶 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080318 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20080618 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20080822 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20080822 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110427 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110726 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110726 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110804 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110826 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110902 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120229 |