JP2008503090A5 - - Google Patents
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- Publication number
- JP2008503090A5 JP2008503090A5 JP2007516485A JP2007516485A JP2008503090A5 JP 2008503090 A5 JP2008503090 A5 JP 2008503090A5 JP 2007516485 A JP2007516485 A JP 2007516485A JP 2007516485 A JP2007516485 A JP 2007516485A JP 2008503090 A5 JP2008503090 A5 JP 2008503090A5
- Authority
- JP
- Japan
- Prior art keywords
- iii
- layered structure
- alternating layers
- materials
- distributed bragg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims 10
- 238000002310 reflectometry Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/871,424 US7126160B2 (en) | 2004-06-18 | 2004-06-18 | II-VI/III-V layered construction on InP substrate |
| PCT/US2005/015009 WO2006007032A1 (en) | 2004-06-18 | 2005-04-29 | Ii-vi/iii-v layered construction on inp substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008503090A JP2008503090A (ja) | 2008-01-31 |
| JP2008503090A5 true JP2008503090A5 (enExample) | 2008-05-01 |
Family
ID=34972045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007516485A Pending JP2008503090A (ja) | 2004-06-18 | 2005-04-29 | ＩｎＰ基板上のＩＩ−ＶＩ／ＩＩＩ−Ｖ層状構造 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7126160B2 (enExample) |
| JP (1) | JP2008503090A (enExample) |
| KR (1) | KR101227293B1 (enExample) |
| CN (1) | CN100479279C (enExample) |
| DE (1) | DE112005001384T5 (enExample) |
| GB (1) | GB2430552B (enExample) |
| TW (1) | TW200618429A (enExample) |
| WO (1) | WO2006007032A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| US7719015B2 (en) * | 2004-12-09 | 2010-05-18 | 3M Innovative Properties Company | Type II broadband or polychromatic LED's |
| US7745814B2 (en) * | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
| JP2006245341A (ja) * | 2005-03-03 | 2006-09-14 | Mitsubishi Electric Corp | 半導体光素子 |
| DE102006010727B4 (de) * | 2005-12-05 | 2019-10-24 | Osram Opto Semiconductors Gmbh | Oberflächenemittierendes Halbleiterbauelement mit einem Tunnelübergang |
| KR100794673B1 (ko) | 2005-12-06 | 2008-01-14 | 한국전자통신연구원 | 수직 공진 표면 발광 레이저 다이오드의 ｄｂｒ 구조물 및그 제조방법과 수직 공진 표면 발광 레이저 다이오드 |
| US20080067370A1 (en) * | 2006-07-01 | 2008-03-20 | Mccaffrey John Patrick | Electron microscope and scanning probe microscope calibration device |
| CN100492670C (zh) * | 2007-06-08 | 2009-05-27 | 中国科学院上海微系统与信息技术研究所 | 波长扩展InGaAs探测器及阵列宽带缓冲层和窗口层及制作方法 |
| KR101538817B1 (ko) * | 2007-09-25 | 2015-07-22 | 퍼스트 솔라, 인코포레이티드 | 헤테로접합을 포함하는 광기전 장치 |
| CN101614843B (zh) * | 2008-06-25 | 2010-12-08 | 中国科学院半导体研究所 | 倏逝波耦合型单一载流子行波光电探测器的制作方法 |
| EP2211431A1 (de) * | 2009-01-22 | 2010-07-28 | Universität Bremen | Bragg-Spiegel mit Übergitter zur Kompensation einer Gitterfehlanpassung |
| EP2427922A1 (en) | 2009-05-05 | 2012-03-14 | 3M Innovative Properties Company | Re-emitting semiconductor construction with enhanced extraction efficiency |
| KR20120015337A (ko) | 2009-05-05 | 2012-02-21 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법 |
| JP2012526391A (ja) | 2009-05-05 | 2012-10-25 | スリーエム イノベイティブ プロパティズ カンパニー | インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子 |
| EP2449608A1 (en) | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | Electroluminescent devices with color adjustment based on current crowding |
| EP2449609A1 (en) | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | Cadmium-free re-emitting semiconductor construction |
| EP2449856A1 (en) | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | White light electroluminescent devices with adjustable color temperature |
| SE534345C2 (sv) * | 2009-09-24 | 2011-07-19 | Svedice Ab | Fotodiod av typen lavinfotodiod. |
| CN101811659B (zh) * | 2010-03-19 | 2013-08-28 | 中国科学院上海微系统与信息技术研究所 | 基于数字合金的非矩形量子结构及其实现方法 |
| EP2711688B1 (en) * | 2011-05-20 | 2020-09-02 | HORIBA, Ltd. | Measuring unit and gas analyzing apparatus |
| CN102322949A (zh) * | 2011-07-28 | 2012-01-18 | 中国科学院西安光学精密机械研究所 | 一种超高时间分辨固态全光探测器 |
| CN102544180A (zh) * | 2012-02-08 | 2012-07-04 | 南京大学 | 一种硫系太阳能电池及其制作方法 |
| US9637999B2 (en) | 2014-03-18 | 2017-05-02 | Baker Hughes Incorporated | Isolation packer with automatically closing alternate path passages |
| US10060198B2 (en) | 2014-03-18 | 2018-08-28 | Baker Hughes, A Ge Company, Llc | Isolation packer with automatically closing alternate path passages |
| JP7516040B2 (ja) * | 2018-12-24 | 2024-07-16 | 晶元光電股▲ふん▼有限公司 | 半導体素子 |
| US11585970B2 (en) * | 2019-10-04 | 2023-02-21 | Teledyne Scientific & Imaging, Llc | Low loss single crystal multilayer optical component and method of making same |
| RU196935U1 (ru) * | 2019-10-09 | 2020-03-23 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | КАЛИБРОВОЧНАЯ ДВУХПЕРИОДНАЯ СВЕРХРЕШЕТКА InAlAs/InGaAs НА ПОДЛОЖКЕ InP |
| KR102300920B1 (ko) * | 2020-11-09 | 2021-09-13 | 한국과학기술원 | InP 기판을 이용한 소자 제조 방법 |
| CN120556145B (zh) * | 2025-07-31 | 2025-10-21 | 合肥芯胜半导体有限公司 | GaAs衬底上生长有CdTe外延层的半导体材料及其制备方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US544193A (en) * | 1895-08-06 | Stencil-cutting machine | ||
| US5206871A (en) | 1991-12-27 | 1993-04-27 | At&T Bell Laboratories | Optical devices with electron-beam evaporated multilayer mirror |
| JPH05343796A (ja) * | 1992-06-08 | 1993-12-24 | Nec Corp | 面出射形半導体レーザ |
| FR2699337B1 (fr) | 1992-12-15 | 1995-06-09 | Deveaud Pledran Benoit | Laser a cavite verticale de faible resistivite. |
| JPH07249835A (ja) | 1994-03-11 | 1995-09-26 | Hitachi Ltd | 半導体光素子 |
| US5956362A (en) | 1996-02-27 | 1999-09-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device and method of etching |
| JPH1083149A (ja) * | 1996-06-18 | 1998-03-31 | Sony Corp | 自発光表示装置 |
| US5732103A (en) | 1996-12-09 | 1998-03-24 | Motorola, Inc. | Long wavelength VCSEL |
| KR100237188B1 (ko) * | 1997-02-10 | 2000-02-01 | 정선종 | 튜너블 레이저 제조 방법 |
| JPH11135833A (ja) * | 1997-10-30 | 1999-05-21 | New Japan Radio Co Ltd | 光半導体装置 |
| JPH11145555A (ja) * | 1997-11-12 | 1999-05-28 | Oki Electric Ind Co Ltd | 面発光レーザ用ミラー構造およびその形成方法 |
| JP3334598B2 (ja) * | 1998-03-25 | 2002-10-15 | 日本電気株式会社 | ＩｎＰ基板上ＩＩ−ＶＩ族化合物半導体薄膜 |
| JP2938445B1 (ja) | 1998-09-07 | 1999-08-23 | 株式会社日立製作所 | 量子井戸光変調器とそれを用いた光通信用モジュールおよび光通信システム |
| JP3358556B2 (ja) * | 1998-09-09 | 2002-12-24 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US20020158265A1 (en) | 2001-04-26 | 2002-10-31 | Motorola, Inc. | Structure and method for fabricating high contrast reflective mirrors |
| US6873638B2 (en) * | 2001-06-29 | 2005-03-29 | 3M Innovative Properties Company | Laser diode chip with waveguide |
| JP2003124508A (ja) | 2001-10-15 | 2003-04-25 | Sharp Corp | 発光ダイオード、デバイス、該デバイスを用いた表示または通信用光源装置 |
-
2004
- 2004-06-18 US US10/871,424 patent/US7126160B2/en not_active Expired - Fee Related
-
2005
- 2005-04-29 DE DE112005001384T patent/DE112005001384T5/de not_active Withdrawn
- 2005-04-29 JP JP2007516485A patent/JP2008503090A/ja active Pending
- 2005-04-29 WO PCT/US2005/015009 patent/WO2006007032A1/en not_active Ceased
- 2005-04-29 GB GB0623093A patent/GB2430552B/en not_active Expired - Fee Related
- 2005-04-29 KR KR1020067026468A patent/KR101227293B1/ko not_active Expired - Fee Related
- 2005-04-29 CN CNB2005800186743A patent/CN100479279C/zh not_active Expired - Fee Related
- 2005-05-12 TW TW094115454A patent/TW200618429A/zh unknown