CN100479279C - InP基板上的Ⅱ-Ⅵ/Ⅲ-Ⅴ多层结构 - Google Patents

InP基板上的Ⅱ-Ⅵ/Ⅲ-Ⅴ多层结构 Download PDF

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Publication number
CN100479279C
CN100479279C CNB2005800186743A CN200580018674A CN100479279C CN 100479279 C CN100479279 C CN 100479279C CN B2005800186743 A CNB2005800186743 A CN B2005800186743A CN 200580018674 A CN200580018674 A CN 200580018674A CN 100479279 C CN100479279 C CN 100479279C
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China
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iii
typically
inp
materials
layers
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Expired - Fee Related
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Chinese (zh)
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CN1965452A (zh
Inventor
孙晓光
托马斯·J·米勒
迈克尔·A·哈斯
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
CNB2005800186743A 2004-06-18 2005-04-29 InP基板上的Ⅱ-Ⅵ/Ⅲ-Ⅴ多层结构 Expired - Fee Related CN100479279C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/871,424 2004-06-18
US10/871,424 US7126160B2 (en) 2004-06-18 2004-06-18 II-VI/III-V layered construction on InP substrate

Publications (2)

Publication Number Publication Date
CN1965452A CN1965452A (zh) 2007-05-16
CN100479279C true CN100479279C (zh) 2009-04-15

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CNB2005800186743A Expired - Fee Related CN100479279C (zh) 2004-06-18 2005-04-29 InP基板上的Ⅱ-Ⅵ/Ⅲ-Ⅴ多层结构

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Country Link
US (1) US7126160B2 (enExample)
JP (1) JP2008503090A (enExample)
KR (1) KR101227293B1 (enExample)
CN (1) CN100479279C (enExample)
DE (1) DE112005001384T5 (enExample)
GB (1) GB2430552B (enExample)
TW (1) TW200618429A (enExample)
WO (1) WO2006007032A1 (enExample)

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US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
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DE102006010727B4 (de) * 2005-12-05 2019-10-24 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterbauelement mit einem Tunnelübergang
KR100794673B1 (ko) 2005-12-06 2008-01-14 한국전자통신연구원 수직 공진 표면 발광 레이저 다이오드의 ｄｂｒ 구조물 및그 제조방법과 수직 공진 표면 발광 레이저 다이오드
US20080067370A1 (en) * 2006-07-01 2008-03-20 Mccaffrey John Patrick Electron microscope and scanning probe microscope calibration device
CN100492670C (zh) * 2007-06-08 2009-05-27 中国科学院上海微系统与信息技术研究所 波长扩展InGaAs探测器及阵列宽带缓冲层和窗口层及制作方法
KR101538817B1 (ko) * 2007-09-25 2015-07-22 퍼스트 솔라, 인코포레이티드 헤테로접합을 포함하는 광기전 장치
CN101614843B (zh) * 2008-06-25 2010-12-08 中国科学院半导体研究所 倏逝波耦合型单一载流子行波光电探测器的制作方法
EP2211431A1 (de) * 2009-01-22 2010-07-28 Universität Bremen Bragg-Spiegel mit Übergitter zur Kompensation einer Gitterfehlanpassung
EP2427922A1 (en) 2009-05-05 2012-03-14 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
KR20120015337A (ko) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
JP2012526391A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
EP2449608A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
EP2449609A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
EP2449856A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
SE534345C2 (sv) * 2009-09-24 2011-07-19 Svedice Ab Fotodiod av typen lavinfotodiod.
CN101811659B (zh) * 2010-03-19 2013-08-28 中国科学院上海微系统与信息技术研究所 基于数字合金的非矩形量子结构及其实现方法
EP2711688B1 (en) * 2011-05-20 2020-09-02 HORIBA, Ltd. Measuring unit and gas analyzing apparatus
CN102322949A (zh) * 2011-07-28 2012-01-18 中国科学院西安光学精密机械研究所 一种超高时间分辨固态全光探测器
CN102544180A (zh) * 2012-02-08 2012-07-04 南京大学 一种硫系太阳能电池及其制作方法
US9637999B2 (en) 2014-03-18 2017-05-02 Baker Hughes Incorporated Isolation packer with automatically closing alternate path passages
US10060198B2 (en) 2014-03-18 2018-08-28 Baker Hughes, A Ge Company, Llc Isolation packer with automatically closing alternate path passages
JP7516040B2 (ja) * 2018-12-24 2024-07-16 晶元光電股▲ふん▼有限公司 半導体素子
US11585970B2 (en) * 2019-10-04 2023-02-21 Teledyne Scientific & Imaging, Llc Low loss single crystal multilayer optical component and method of making same
RU196935U1 (ru) * 2019-10-09 2020-03-23 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) КАЛИБРОВОЧНАЯ ДВУХПЕРИОДНАЯ СВЕРХРЕШЕТКА InAlAs/InGaAs НА ПОДЛОЖКЕ InP
KR102300920B1 (ko) * 2020-11-09 2021-09-13 한국과학기술원 InP 기판을 이용한 소자 제조 방법
CN120556145B (zh) * 2025-07-31 2025-10-21 合肥芯胜半导体有限公司 GaAs衬底上生长有CdTe外延层的半导体材料及其制备方法

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US5544193A (en) * 1992-12-15 1996-08-06 France Telecom Vertical cavity laser of low resistivity
US5732103A (en) * 1996-12-09 1998-03-24 Motorola, Inc. Long wavelength VCSEL
JP2003124508A (ja) * 2001-10-15 2003-04-25 Sharp Corp 発光ダイオード、デバイス、該デバイスを用いた表示または通信用光源装置

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JPH05343796A (ja) * 1992-06-08 1993-12-24 Nec Corp 面出射形半導体レーザ
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Publication number Priority date Publication date Assignee Title
US5544193A (en) * 1992-12-15 1996-08-06 France Telecom Vertical cavity laser of low resistivity
US5732103A (en) * 1996-12-09 1998-03-24 Motorola, Inc. Long wavelength VCSEL
JP2003124508A (ja) * 2001-10-15 2003-04-25 Sharp Corp 発光ダイオード、デバイス、該デバイスを用いた表示または通信用光源装置

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Also Published As

Publication number Publication date
JP2008503090A (ja) 2008-01-31
US7126160B2 (en) 2006-10-24
US20050280013A1 (en) 2005-12-22
DE112005001384T5 (de) 2007-05-16
GB0623093D0 (en) 2006-12-27
TW200618429A (en) 2006-06-01
GB2430552B (en) 2009-05-20
GB2430552A (en) 2007-03-28
KR101227293B1 (ko) 2013-01-29
CN1965452A (zh) 2007-05-16
WO2006007032A1 (en) 2006-01-19
KR20070034496A (ko) 2007-03-28

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