JP2010505251A5 - - Google Patents

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Publication number
JP2010505251A5
JP2010505251A5 JP2009529522A JP2009529522A JP2010505251A5 JP 2010505251 A5 JP2010505251 A5 JP 2010505251A5 JP 2009529522 A JP2009529522 A JP 2009529522A JP 2009529522 A JP2009529522 A JP 2009529522A JP 2010505251 A5 JP2010505251 A5 JP 2010505251A5
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JP
Japan
Prior art keywords
semiconductor body
led semiconductor
led
contact
active layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009529522A
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English (en)
Japanese (ja)
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JP2010505251A (ja
JP5479098B2 (ja
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Publication date
Priority claimed from DE102006046038A external-priority patent/DE102006046038A1/de
Application filed filed Critical
Publication of JP2010505251A publication Critical patent/JP2010505251A/ja
Publication of JP2010505251A5 publication Critical patent/JP2010505251A5/ja
Application granted granted Critical
Publication of JP5479098B2 publication Critical patent/JP5479098B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009529522A 2006-09-28 2007-09-19 Led半導体ボディおよびled半導体ボディの使用方法 Expired - Fee Related JP5479098B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006046038.3 2006-09-28
DE102006046038A DE102006046038A1 (de) 2006-09-28 2006-09-28 LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
PCT/DE2007/001693 WO2008040300A1 (de) 2006-09-28 2007-09-19 Led-halbleiterkörper und verwendung eines led-halbleiterkörpers

Publications (3)

Publication Number Publication Date
JP2010505251A JP2010505251A (ja) 2010-02-18
JP2010505251A5 true JP2010505251A5 (enExample) 2011-06-16
JP5479098B2 JP5479098B2 (ja) 2014-04-23

Family

ID=39118340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009529522A Expired - Fee Related JP5479098B2 (ja) 2006-09-28 2007-09-19 Led半導体ボディおよびled半導体ボディの使用方法

Country Status (8)

Country Link
US (1) US8283684B2 (enExample)
EP (1) EP2062296B1 (enExample)
JP (1) JP5479098B2 (enExample)
KR (1) KR101421761B1 (enExample)
CN (1) CN101563778B (enExample)
DE (1) DE102006046038A1 (enExample)
TW (1) TWI384644B (enExample)
WO (1) WO2008040300A1 (enExample)

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DE102008025160A1 (de) 2008-05-26 2009-12-03 Osram Opto Semiconductors Gmbh Projektor für kleinste Projektionsflächen und Verwendung einer Mehrfarben-LED in einem Projektor
KR101332794B1 (ko) * 2008-08-05 2013-11-25 삼성전자주식회사 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법
DE102008053731B4 (de) * 2008-10-29 2024-10-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US7983317B2 (en) * 2008-12-16 2011-07-19 Corning Incorporated MQW laser structure comprising plural MQW regions
DE102010023342A1 (de) 2010-06-10 2011-12-15 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Leuchtmittel insbesondere mit solch einer Leuchtdiodenanordnung
CN101902856A (zh) * 2010-07-05 2010-12-01 陆敬仁 又一种用交流电直接驱动普通led的方法
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
EP2618388B1 (en) 2012-01-20 2019-10-02 OSRAM Opto Semiconductors GmbH Light-emitting diode chip
TWI470826B (zh) * 2012-03-30 2015-01-21 Phostek Inc 發光二極體裝置
JP6071650B2 (ja) * 2013-03-01 2017-02-01 スタンレー電気株式会社 半導体発光装置
US9825088B2 (en) * 2015-07-24 2017-11-21 Epistar Corporation Light-emitting device and manufacturing method thereof
DE112016006010T5 (de) 2015-12-24 2019-01-24 Vuereal Inc. Vertikale Festkörpervorrichtungen
US9859470B2 (en) 2016-03-10 2018-01-02 Epistar Corporation Light-emitting device with adjusting element
CN117558739A (zh) 2017-03-30 2024-02-13 维耶尔公司 垂直固态装置
US11600743B2 (en) 2017-03-30 2023-03-07 Vuereal Inc. High efficient microdevices
US11721784B2 (en) 2017-03-30 2023-08-08 Vuereal Inc. High efficient micro devices
JP7323783B2 (ja) 2019-07-19 2023-08-09 日亜化学工業株式会社 発光装置の製造方法及び発光装置
DE102020001353B3 (de) * 2020-03-03 2020-12-31 Azur Space Solar Power Gmbh Stapelförmiges photonisches lll-V-Halbleiterbauelement und Optokoppler
US11489089B2 (en) 2020-06-19 2022-11-01 Lextar Electronics Corporation Light emitting device with two vertically-stacked light emitting cells
US20240371912A1 (en) * 2021-02-22 2024-11-07 The Regents Of The University Of California Monolithic, cascaded, multiple color light-emitting diodes with independent junction control
CN117438516A (zh) * 2023-12-21 2024-01-23 江西兆驰半导体有限公司 一种垂直结构高压Micro LED芯片及其制备方法

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