JP2007073606A5 - - Google Patents

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Publication number
JP2007073606A5
JP2007073606A5 JP2005256566A JP2005256566A JP2007073606A5 JP 2007073606 A5 JP2007073606 A5 JP 2007073606A5 JP 2005256566 A JP2005256566 A JP 2005256566A JP 2005256566 A JP2005256566 A JP 2005256566A JP 2007073606 A5 JP2007073606 A5 JP 2007073606A5
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JP
Japan
Prior art keywords
layer
type cladding
semiconductor device
type
carrier concentration
Prior art date
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Application number
JP2005256566A
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English (en)
Japanese (ja)
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JP2007073606A (ja
JP4920221B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2005256566A external-priority patent/JP4920221B2/ja
Priority to JP2005256566A priority Critical patent/JP4920221B2/ja
Priority to CNB2006101089272A priority patent/CN100514774C/zh
Priority to KR1020060071437A priority patent/KR20070025989A/ko
Priority to US11/500,292 priority patent/US7772586B2/en
Priority to EP06016562.8A priority patent/EP1760850B1/en
Publication of JP2007073606A publication Critical patent/JP2007073606A/ja
Publication of JP2007073606A5 publication Critical patent/JP2007073606A5/ja
Publication of JP4920221B2 publication Critical patent/JP4920221B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005256566A 2005-09-05 2005-09-05 ＩｎＰ基板を有する光半導体装置 Expired - Fee Related JP4920221B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005256566A JP4920221B2 (ja) 2005-09-05 2005-09-05 ＩｎＰ基板を有する光半導体装置
CNB2006101089272A CN100514774C (zh) 2005-09-05 2006-07-28 具有InP衬底的光半导体装置
KR1020060071437A KR20070025989A (ko) 2005-09-05 2006-07-28 ＩｎＰ 기판을 갖는 광 반도체 장치
EP06016562.8A EP1760850B1 (en) 2005-09-05 2006-08-08 Optical semiconductor devices on InP substrate
US11/500,292 US7772586B2 (en) 2005-09-05 2006-08-08 Optical semiconductor devices on InP substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005256566A JP4920221B2 (ja) 2005-09-05 2005-09-05 ＩｎＰ基板を有する光半導体装置

Publications (3)

Publication Number Publication Date
JP2007073606A JP2007073606A (ja) 2007-03-22
JP2007073606A5 true JP2007073606A5 (enExample) 2008-08-28
JP4920221B2 JP4920221B2 (ja) 2012-04-18

Family

ID=37492262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005256566A Expired - Fee Related JP4920221B2 (ja) 2005-09-05 2005-09-05 ＩｎＰ基板を有する光半導体装置

Country Status (5)

Country Link
US (1) US7772586B2 (enExample)
EP (1) EP1760850B1 (enExample)
JP (1) JP4920221B2 (enExample)
KR (1) KR20070025989A (enExample)
CN (1) CN100514774C (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4996869B2 (ja) * 2006-03-20 2012-08-08 株式会社日立製作所 半導体レーザ
JP5028177B2 (ja) * 2007-07-25 2012-09-19 ソニー株式会社 半導体素子
JP2009059886A (ja) 2007-08-31 2009-03-19 Hitachi Ltd 半導体発光素子
JP2010045165A (ja) * 2008-08-12 2010-02-25 Sony Corp 半導体素子
EP2211431A1 (de) * 2009-01-22 2010-07-28 Universität Bremen Bragg-Spiegel mit Übergitter zur Kompensation einer Gitterfehlanpassung
DE112011101530B4 (de) 2010-04-30 2021-03-25 Trustees Of Boston University Verfahren zur Herstellung einer optischen Vorrichtung
CN101976691B (zh) * 2010-08-23 2012-11-21 北京工业大学 一种五结化合物半导体太阳能光伏电池芯片
GB2503606B (en) * 2011-04-06 2018-04-04 Int Crystal Laboratories Radiation detector
US8723189B1 (en) 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
EP3050130A4 (en) * 2013-09-27 2017-03-01 Intel Corporation Forming led structures on silicon fins
JP6954562B2 (ja) * 2017-09-15 2021-10-27 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
CN109860360B (zh) * 2018-11-29 2020-08-18 华灿光电（浙江）有限公司 一种氮化镓基发光二极管外延片及其制备方法
KR102712563B1 (ko) 2019-11-18 2024-10-02 삼성디스플레이 주식회사 양자점, 이를 포함하는 조성물 또는 복합체, 패턴화된 막, 및 이를 포함하는 표시 소자
RU2756003C1 (ru) * 2020-11-13 2021-09-24 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
JPH03179790A (ja) * 1989-12-08 1991-08-05 Hitachi Ltd 半導体構造体および半導体レーザ装置
RU94046132A (ru) * 1992-05-22 1996-09-27 Миннесота Майнинг энд Мануфакчуринг Компани (US) Способ управления системой молекулярной пучковой эпитаксии /mbe/ во время изготовления электролюминисцентного прибора на полупроводниковом ii-yi соединении и ii-yi лазерные диоды
JPH07142765A (ja) * 1993-11-15 1995-06-02 Hitachi Ltd 半導体発光素子、半導体レーザ及び半導体発光素子の製造方法
JPH07202346A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 半導体装置の製造方法および半導体装置
JPH07254755A (ja) * 1994-03-16 1995-10-03 Hitachi Ltd 半導体発光素子
JPH07326817A (ja) * 1994-06-01 1995-12-12 Fujitsu Ltd 半導体発光素子
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
JPH09129981A (ja) * 1995-10-31 1997-05-16 Nec Corp 半導体発光素子
JP2803722B2 (ja) * 1996-05-10 1998-09-24 日本電気株式会社 半導体装置及びその製造方法
JP2930032B2 (ja) * 1996-09-26 1999-08-03 日本電気株式会社 Ｉｉ−ｖｉ族化合物半導体発光素子およびその製造方法
JPH10112565A (ja) * 1996-10-04 1998-04-28 Matsushita Electric Ind Co Ltd 半導体発光素子
US6178190B1 (en) * 1997-08-04 2001-01-23 Nec Corporation II-VI compound semiconductor light emitting device
US7358159B2 (en) * 2001-04-04 2008-04-15 Nippon Mining & Metals Co., Ltd. Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device
CN1431722A (zh) * 2003-02-18 2003-07-23 华南师范大学 Ⅲ族氮化物半导体蓝色发光器件

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