JP2009528679A5 - - Google Patents
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- Publication number
- JP2009528679A5 JP2009528679A5 JP2008556484A JP2008556484A JP2009528679A5 JP 2009528679 A5 JP2009528679 A5 JP 2009528679A5 JP 2008556484 A JP2008556484 A JP 2008556484A JP 2008556484 A JP2008556484 A JP 2008556484A JP 2009528679 A5 JP2009528679 A5 JP 2009528679A5
- Authority
- JP
- Japan
- Prior art keywords
- optoelectronic device
- nanowires
- emitter
- silicon
- material comprises
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 claims 19
- 239000002070 nanowire Substances 0.000 claims 16
- 239000004020 conductor Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000007787 solid Substances 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 4
- 230000007704 transition Effects 0.000 claims 4
- 229910052797 bismuth Inorganic materials 0.000 claims 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 3
- 239000011810 insulating material Substances 0.000 claims 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 239000005083 Zinc sulfide Substances 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 230000005274 electronic transitions Effects 0.000 claims 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000002096 quantum dot Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77713106P | 2006-02-27 | 2006-02-27 | |
| US60/777,131 | 2006-02-27 | ||
| PCT/US2007/005361 WO2008063209A2 (en) | 2006-02-27 | 2007-02-27 | Optoelectronic devices utilizing materials having enhanced electronic transitions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009528679A JP2009528679A (ja) | 2009-08-06 |
| JP2009528679A5 true JP2009528679A5 (enExample) | 2010-04-08 |
| JP5344931B2 JP5344931B2 (ja) | 2013-11-20 |
Family
ID=39430213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008556484A Expired - Fee Related JP5344931B2 (ja) | 2006-02-27 | 2007-02-27 | 向上した電子遷移を有する材料を使用した光電子デバイス |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7893512B2 (enExample) |
| EP (1) | EP1994565A4 (enExample) |
| JP (1) | JP5344931B2 (enExample) |
| KR (1) | KR101327723B1 (enExample) |
| CN (1) | CN101405864B (enExample) |
| AU (1) | AU2007322360B2 (enExample) |
| CA (1) | CA2642299A1 (enExample) |
| IL (1) | IL193349A0 (enExample) |
| WO (1) | WO2008063209A2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7893512B2 (en) | 2006-02-27 | 2011-02-22 | Los Alamos National Security, Llc | Optoelectronic devices utilizing materials having enhanced electronic transitions |
| TWI550646B (zh) * | 2006-10-12 | 2016-09-21 | 坎畢歐科技公司 | 製造透明導體之方法 |
| CN101842909A (zh) * | 2007-07-19 | 2010-09-22 | 加利福尼亚技术学院 | 半导体的有序阵列结构 |
| JP2010538464A (ja) | 2007-08-28 | 2010-12-09 | カリフォルニア インスティテュート オブ テクノロジー | ポリマ埋め込み型半導体ロッドアレイ |
| EP2269227A1 (en) * | 2008-04-03 | 2011-01-05 | Bandgap Engineering, Inc. | Designing the host of nano-structured optoelectronic devices to improve performance |
| WO2009137241A2 (en) | 2008-04-14 | 2009-11-12 | Bandgap Engineering, Inc. | Process for fabricating nanowire arrays |
| US9000353B2 (en) * | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
| WO2010042209A1 (en) * | 2008-10-09 | 2010-04-15 | Bandgap Engineering, Inc. | Process for structuring silicon |
| PT2351100T (pt) | 2008-11-14 | 2020-04-21 | Bandgap Eng Inc | Dispositivos nanoestruturados |
| WO2011066570A2 (en) * | 2009-11-30 | 2011-06-03 | California Institute Of Technology | Semiconductor wire array structures, and solar cells and photodetectors based on such structures |
| WO2011156042A2 (en) | 2010-03-23 | 2011-12-15 | California Institute Of Technology | Heterojunction wire array solar cells |
| US20120015247A1 (en) * | 2010-07-14 | 2012-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Silicon crystal body and power storage device using the silicon crystal body |
| US8945794B2 (en) | 2010-11-12 | 2015-02-03 | Faris Modawar | Process for forming silver films on silicon |
| US9099583B2 (en) | 2011-01-18 | 2015-08-04 | Bandgap Engineering, Inc. | Nanowire device with alumina passivation layer and methods of making same |
| WO2013043730A2 (en) | 2011-09-19 | 2013-03-28 | Bandgap Engineering, Inc. | Electrical contacts to nanostructured areas |
| CN102436532A (zh) * | 2011-11-28 | 2012-05-02 | 华北电力大学 | InAs/GaSb超晶格电子结构的设计方法 |
| US10026560B2 (en) | 2012-01-13 | 2018-07-17 | The California Institute Of Technology | Solar fuels generator |
| US9545612B2 (en) | 2012-01-13 | 2017-01-17 | California Institute Of Technology | Solar fuel generator |
| WO2013126432A1 (en) | 2012-02-21 | 2013-08-29 | California Institute Of Technology | Axially-integrated epitaxially-grown tandem wire arrays |
| WO2013152043A1 (en) | 2012-04-02 | 2013-10-10 | California Institute Of Technology | Solar fuels generator |
| WO2013152132A1 (en) | 2012-04-03 | 2013-10-10 | The California Institute Of Technology | Semiconductor structures for fuel generation |
| US9553223B2 (en) | 2013-01-24 | 2017-01-24 | California Institute Of Technology | Method for alignment of microwires |
| US9449855B2 (en) | 2013-07-12 | 2016-09-20 | Advanced Silicon Group, Inc. | Double-etch nanowire process |
| CN106206269B (zh) * | 2016-07-26 | 2019-09-17 | 山东大学 | 一种利用半导体极性场提高热电子注入效率的方法 |
| US11087055B2 (en) * | 2017-11-17 | 2021-08-10 | Samsung Electronics Co., Ltd. | Method of screening materials using forward conducting modes |
| CN110322938B (zh) * | 2018-07-17 | 2021-06-15 | 中国科学院物理研究所 | 拓扑电子材料的判定和搜索方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0892446B1 (en) * | 1993-11-02 | 2006-05-24 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing an aggregate of semiconductor micro-needles and method of manufacturing a semiconductor device comprising an aggregate of semiconductor micro-needles |
| JPH07272651A (ja) * | 1994-03-31 | 1995-10-20 | Mitsubishi Electric Corp | 針状結晶構造とその製造方法 |
| US5851310A (en) * | 1995-12-06 | 1998-12-22 | University Of Houston | Strained quantum well photovoltaic energy converter |
| ES2149137B1 (es) * | 1999-06-09 | 2001-11-16 | Univ Madrid Politecnica | Celula solar fotovoltaica de semiconductor de banda intermedia. |
| TWI220319B (en) * | 2002-03-11 | 2004-08-11 | Solidlite Corp | Nano-wire light emitting device |
| US20030189202A1 (en) * | 2002-04-05 | 2003-10-09 | Jun Li | Nanowire devices and methods of fabrication |
| US7038890B2 (en) * | 2003-07-29 | 2006-05-02 | Hitachi Global Storage Technologies Netherlands B.V. | Current perpendicular to the planes (CPP) sensor with a highly conductive cap structure |
| US20050196707A1 (en) | 2004-03-02 | 2005-09-08 | Eastman Kodak Company | Patterned conductive coatings |
| KR100624419B1 (ko) * | 2004-04-07 | 2006-09-19 | 삼성전자주식회사 | 나노와이어 발광소자 및 그 제조방법 |
| US7307271B2 (en) * | 2004-11-05 | 2007-12-11 | Hewlett-Packard Development Company, L.P. | Nanowire interconnection and nano-scale device applications |
| US20060207647A1 (en) * | 2005-03-16 | 2006-09-21 | General Electric Company | High efficiency inorganic nanorod-enhanced photovoltaic devices |
| US7893512B2 (en) | 2006-02-27 | 2011-02-22 | Los Alamos National Security, Llc | Optoelectronic devices utilizing materials having enhanced electronic transitions |
-
2007
- 2007-02-27 US US11/712,128 patent/US7893512B2/en not_active Expired - Fee Related
- 2007-02-27 WO PCT/US2007/005361 patent/WO2008063209A2/en not_active Ceased
- 2007-02-27 EP EP07867002A patent/EP1994565A4/en not_active Withdrawn
- 2007-02-27 KR KR1020087020877A patent/KR101327723B1/ko not_active Expired - Fee Related
- 2007-02-27 JP JP2008556484A patent/JP5344931B2/ja not_active Expired - Fee Related
- 2007-02-27 CN CN2007800068110A patent/CN101405864B/zh not_active Expired - Fee Related
- 2007-02-27 AU AU2007322360A patent/AU2007322360B2/en not_active Ceased
- 2007-02-27 CA CA002642299A patent/CA2642299A1/en not_active Abandoned
-
2008
- 2008-08-10 IL IL193349A patent/IL193349A0/en unknown
-
2011
- 2011-02-22 US US13/032,076 patent/US8415758B2/en not_active Expired - Fee Related
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